Concentration and localization of zinc during seed development and germination in wheat

In a field experiment, the effect of foliar Zn applications on the concentration of Zn in seeds of a bread wheat cultivar (Triticum aestivum L. cv. Balatilla) was studied during different stages of seed development. In addition, a staining method using dithizone (DTZ: diphenyl thiocarbazone) was applied to (1) study the localization of Zn in seeds, (2) follow the remobilization of Zn during germination, and (3) develop a rapid visual Zn screening method for seed and flour samples. In all seed development stages, foliar Zn treatments were effective in increasing seed Zn concentration. The highest Zn concentration in the seeds was found in the first stage of seed development (around the early milk stage); after this, seed Zn concentration gradually decreased until maturity. When reacting with Zn, DTZ forms a redcolored complex. The DTZ staining of seed samples revealed that Zn is predominantly located in the embryo and aleurone parts of the seeds. After 36 h of germination, the coleoptile and roots that emerged from seeds showed very intensive red color formation and had Zn concentrations up to 200 mg kg1, indicating a substantial remobilization of Zn from seed pools into the developing roots (radicle) and coleoptile. The DTZ staining method seems to be useful in ranking flour samples for their Zn concentrations. There was a close relationship between the seed Zn concentrations and spectral absorbance of the methanol extracts of the flour samples stained with DTZ. The results suggest that (1) accumulation of Zn in seeds is particularly high during early seed development, (2) Zn is concentrated in the embryo and aleurone parts, and (3) the DTZ staining method can be used as a rapid, semiquantitative method to estimate Zn concentrations of flour and seed samples and to screen genotypes for their Zn concentrations in seeds

Glyphosate reduced seed and leaf concentrations of calcium, manganese, magnesium, and iron in non-glyphosate resistant soybean

Greenhouse experiments were conducted to study the effects of glyphosate drift on plant growth and concentrations of mineral nutrients in leaves and seeds of non-glyphosate resistant soybean plants (Glycine max, L.). Glyphosate was sprayed on plant shoots at increasing rates between 0.06 and 1.2% of the recommended application rate forweed control. In an experiment with 3-week-old plants, increasing application of glyphosate on shoots significantly reduced chlorophyll concentration of the young leaves and shoots dry weight, particularly the young parts of plants. Concentration of shikimate due to increasing glyphosate rates was nearly 2-fold for older leaves and 16-fold for younger leaves compared to the control plants without glyphosate spray. Among the mineral nutrients analyzed, the leaf concentrations of potassium (K), phosphorus (P), copper (Cu) and zinc (Zn) were not affected, or even increased significantly in case of P and Cu in young leaves by glyphosate, while the concentrations of calcium (Ca), manganese (Mn) and magnesium (Mg) were reduced, particularly in young leaves. In the case of Fe, leaf concentrations showed a tendency to be reduced by glyphosate. In the second experiment harvested at the grain maturation, glyphosate application did not reduce the seed concentrations of nitrogen (N), K, P, Zn and Cu. Even, at the highest application rate of glyphosate, seed concentrations of N, K, Zn and Cuwere increased by glyphosate. By contrast, the seed concentrations of Ca, Mg, Fe and Mn were significantly reduced by glyphosate. These results suggested that glyphosatemay interfere with uptake and retranslocation of Ca, Mg, Fe and Mn, most probably by binding and thus immobilizing them. The decreases in seed concentration of Fe, Mn, Ca and Mg by glyphosate are very specific, and may affect seed quality

Adsorption of Te on Ge(001): Density-functional calculations

We present ab initio density-functional calculations for the adsorption of Te on the Ge(001) surface. Various possible adsorption geometries for the 0.5-, 0.8-, 1-, and 2-ML (monolayer) coverages of Te have been investigated. Our results for sub-monolayer coverages confirm earlier results as well as provide some new insight into the adsorption of Te. Furthermore, our results for the 2-ML coverage of Te suggest that the bonding between the overlayer and the substrate has changed significantly. This may provide useful information on possible desorption of Te in the form of strongly bonded Te-2 units

Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2×\times1) surface

We theoretically study the electronic band structure of isolated unpaired and paired dangling bonds (DB), DB wires and DB clusters on H:Si(100)-(2$\times$1) surface using Extended H\"uckel Theory (EHT) and report their effect on the Si band gap. An isolated unpaired DB introduces a near-midgap state, whereas a paired DB leads to $\pi$ and $\pi^*$ states, similar to those introduced by an unpassivated asymmetric dimer (AD) Si(100)-(2$\times$1) surface. Such induced states have very small dispersion due to their isolation from the other states, which reside in conduction and valence band. On the other hand, the surface state induced due to an unpaired DB wire in the direction along the dimer row (referred to as $[\bar{1}10]$), has large dispersion due to the strong coupling between the adjacent DBs, being 3.84$\AA$ apart. However, in the direction perpendicular to the dimer row (referred to as [110]), due to the reduced coupling between the DBs being 7.68$\AA$ apart, the dispersion in the surface state is similar to that of an isolated unpaired DB. Apart from this, a paired DB wire in $[\bar{1}10]$ direction introduces $\pi$ and $\pi^*$ states similar to those of an AD surface and a paired DB wire in [110] direction exhibits surface states similar to those of an isolated paired DB, as expected. Besides this, we report the electronic structure of different DB clusters, which exhibit states inside the band gap that can be interpreted as superpositions of states due to unpaired and paired DBs.Comment: 7 pages, 10 figure, 1 tabl

The influence of thickness and ammonia flow rate on the properties of AIN layers

Cataloged from PDF version of article.Undoped AlN layers have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition in order to study the effects of ammonia (NH3) flow rate and layer thickness on the structural quality and surface morphology of AlN layers by high-resolution X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Lower NH3 flow rate improves crystallinity of the symmetric (0 0 0 2) plane in AlN layers. Ammonia flow rate is also correlated with surface quality; pit-free and smooth AlN surfaces have been obtained at a flow rate of 70 standard cm(3) per minute. Thicker AlN films improve the crystallinity of the asymmetric (1 0 1 (1) over bar 2) plane. (c) 2011 Elsevier Ltd. All rights reserved

On the role of initial coherence in the spin phase-space entropy production rate

Recent studies have pointed out the intrinsic dependence of figures of merit of thermodynamic relevance—such as work, heat and entropy production—on the amount of quantum coherences that is made available to a system. However, whether coherences hinder or enhance the value taken by such quantifiers of thermodynamic performance is yet to be ascertained. We show that, when considering entropy production generated in a process taking a finite-size bipartite quantum system out of equilibrium through local non-unitary channels, no general monotonicity relationship exists between the entropy production and degree of quantum coherence in the state of the system. A direct correspondence between such quantities can be retrieved when considering specific forms of open-system dynamics applied to suitably chosen initial states. Our results call for a systematic study of the role of genuine quantum features in the non-equilibrium thermodynamics of quantum processes