InGaP Power HBTs : Basic power cells for High Power transistors

Power HBT Technology offers today the best compromise for high power – high efficiency amplifiers up to Ku band. Many improvements have been published in the past to offer a better behaviour in terms of thermal heating and microwave performances. Since the reliability limiting factors have been solved, significant improvements could be proposed to get more power. In this paper, we report on the proposal of new elementary cells used in multi-finger transistors. Based on these, compact very high power amplifiers could be considered

Tiger AlGaN/GaN HEMT technology

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Power Performance Evaluation of AlGaN/GaN HEMTs through Load Pull and Pulsed I-V Measurements

A systematic evaluation of power performances of AlGaN/GaN HEMTs has been performed by means of CW on wafer Load Pull measurements at X band. Those measurements have been correlated to the results obtained through I-V and S-parameters pulsed measurements and a strong correlation has been found between the two types of measurement. Power up to 6Watts has been measured on a 1.2 mm device that can be further improved if trapping effects can be removed. A non linear electrical model of the 0.25x 1200 µm² transistor taken from the I-V and the S-parameters pulsed measurements is validated by CW load pull measures

Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz.

AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the device performance and characteristics. A good correlation is observed between pulsed and power measurements. At 10GHz, a 6.3W/mm power density with a 36% PAE at 2dB of compression was obtained after passivation, while only 2.9W/mm before passivation