A systematic evaluation of power
performances of AlGaN/GaN HEMTs has been performed
by means of CW on wafer Load Pull measurements at X
band. Those measurements have been correlated to the
results obtained through I-V and S-parameters pulsed
measurements and a strong correlation has been found
between the two types of measurement. Power up to 6Watts
has been measured on a 1.2 mm device that can be further
improved if trapping effects can be removed. A non linear
electrical model of the 0.25x 1200 µm² transistor taken from
the I-V and the S-parameters pulsed measurements is
validated by CW load pull measures
