AlGaN/GaN high electron mobility
transistors (HEMTS on SiC) were characterized before and
after SiO2/Si3N4 passivation. DC, small signal, pulsed and
large signal measurements were performed. We discuss the
role and the influence of passivation on the device
performance and characteristics. A good correlation is
observed between pulsed and power measurements. At
10GHz, a 6.3W/mm power density with a 36% PAE at 2dB
of compression was obtained after passivation, while only
2.9W/mm before passivation
