Pulsed 193 nm Excimer laser processing of 4H–SiC (0001) wafers with radiant exposure dependent in situ reflectivity studies for process optimization

Apoyo científico y técnico del CACTI193 nm Excimer lasers are efficient tools to process group-IV semiconductors for advanced microelectronic and photonic devices through crystallization annealing, or strain engineering. The combination of both, high photon energy and low penetration depth of the 193 nm laser pulses allow breaking most covalent bonds with a single photon, and low thermal budget treatments through a precise control of the laser processed volume. Up to now, studies using 193 nm lasers for silicon carbide (SiC) processing are mostly limited to ablation processes for micromachining purposes. This paper presents a first study to demonstrate that the optimization of other processes, like the creation or annealing of vacancies, the alloying of SiC surfaces or the selective ablation of silicon or carbon should also be feasible. To develop such laser assisted processes and optimize process parameters, a numerical simulation of the laser/material interaction is essential. This implies that the temporal evolution of the laser pulse must be well known, and that an “in-situ measurement” of the response of the material to the laser pulse should be available. This study therefore evaluates the temporal profile of a new high-power Excimer laser, and presents the results of in-situ Time Resolved Reflectivity (TRR) measurements obtained when irradiating 4H–SiC(0001) wafers with radiant exposures ranging from 0,1 J/cm2 to 3,0 J/cm2. The temporal pulse profile is determined, fitted and applied in a 1-D numerical simulation of the temperature gradients for Si(100) as reference sample, to validate the experimental findings. Radiant exposure thresholds at around 1,4 J/cm2 to locally produce molten surfaces and 1,8 J/cm2 to ablate and create carbon-rich regions with graphene, are determined in-situ and confirmed by Raman spectroscopy.Los láseres Excimer de 193 nm son herramientas eficaces para procesar semiconductores del grupo IV para dispositivos microelectrónicos y fotónicos avanzados mediante recocido de cristalización o ingeniería de deformación. La combinación de la alta energía fotónica y la baja profundidad de penetración de los pulsos láser de 193 nm permite romper la mayoría de los enlaces covalentes con un solo fotón, y tratamientos de bajo presupuesto térmico mediante un control preciso del volumen procesado por láser. Hasta ahora, los estudios que utilizan láseres de 193 nm para el procesado de carburo de silicio (SiC) se limitan principalmente a procesos de ablación con fines de micromecanizado. Este trabajo presenta un primer estudio para demostrar que la optimización de otros procesos, como la creación o recocido de vacantes, la aleación de superficies de SiC o la ablación selectiva de silicio o carbono también debería ser factible. Para desarrollar estos procesos asistidos por láser y optimizar los parámetros del proceso, es esencial realizar una simulación numérica de la interacción entre el láser y el material. Esto implica que debe conocerse bien la evolución temporal del pulso láser y que debe disponerse de una "medición in situ" de la respuesta del material al pulso láser. Por lo tanto, este estudio evalúa el perfil temporal de un nuevo láser Excimer de alta potencia, y presenta los resultados de las medidas in-situ de Reflectividad Resuelta en el Tiempo (TRR) obtenidas al irradiar obleas de 4H-SiC(0001) con exposiciones radiantes que oscilan entre 0,1 J/cm2 y 3,0 J/cm2. El perfil temporal del pulso se determina, ajusta y aplica en una simulación numérica 1-D de los gradientes de temperatura para Si(100) como muestra de referencia, para validar los resultados experimentales. Los umbrales de exposición radiante en torno a 1,4 J/cm2 para producir localmente superficies fundidas y 1,8 J/cm2 para ablacionar y crear regiones ricas en carbono con grafeno, se determinan in situ y se confirman mediante espectroscopia Raman.Xunta de Galicia | Ref. ED431C-2021/49Agencia Estatal de Investigación | Ref. TED2021-131760B-I00Universidade de Vigo/CISU

Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content

We examine the Raman shift in silicon–germanium–tin alloys with high silicon content grown on a germanium virtual substrate by molecular beam epitaxy. The Raman shifts of the three most prominent modes, Si–Si, Si–Ge, and Ge–Ge, are measured and compared with results in previous literature. We analyze and fit the dependence of the three modes on the composition and strain of the semiconductor alloys. We also demonstrate the calculation of the composition and strain of SixGe1 − x − ySny from the Raman shifts alone, based on the fitted relationships. Our analysis extends previous results to samples lattice matched on Ge and with higher Si content than in prior comprehensive Raman analyses, thus making Raman measurements as a local, fast, and nondestructive characterization technique accessible for a wider compositional range of these ternary alloys for silicon-based photonic and microelectronic devices.Deutsche Forschungsgemeinschaft http://dx.doi.org/10.13039/501100001659Peer Reviewe

Device-Compatible Chiroptical Surfaces through Self-Assembly of Enantiopure Allenes

Chiroptical methods have been proven to be superior compared to their achiral counterparts for the structural elucidation of many compounds. To expand the use of chiroptical systems to everyday applications, the development of functional materials exhibiting intense chiroptical responses is essential. Particularly, tailored and robust interfaces compatible with standard device operation conditions are required. Herein, we present the design and synthesis of chiral allenes and their use for the functionalization of gold surfaces. The self-assembly results in a monolayer-thin room-temperature-stable upstanding chiral architecture as ascertained by ellipsometry, X-ray photoelectron spectroscopy, and near-edge X-ray absorption fine structure. Moreover, these nanostructures anchored to device-compatible substrates feature intense chiroptical second harmonic generation. Both straightforward preparation of the device-compatible interfaces along with their chiroptical nature provide major prospects for everyday applications

ATM cash replenishment under varying population coverage requirements

Inspired by an automated teller machine (ATM) cash replenishment problem involving population coverage requirements (PCRs) in the Netherlands, we propose the vehicle tour problem with minimum coverage requirements. In this problem, a set of minimum-cost routes is constructed subject to constraints on the duration of each route and the population coverage of the replenished ATMs. A compact formulation incorporating a family of valid inequalities and an efficient tour-splitting metaheuristic are proposed and tested on 77 instances derived from real-life data involving up to 98 ATMs and 237,604 citizens and on 144 newly generated synthetic instances. Our results for the real-life instances indicate significant cost differences in replenishing ATMs for seven major Dutch cities when the PCRs vary. Additionally, we illustrate the impact of different PCRs on the ATM replenishment costs for seven major cities in the Netherlands by presenting an aggregated cost evaluation of 11 PCRs involving 1,003,519 citizens, 338 ATMs, and 19 cash distribution vehicles

Unexpected hospitalisation side effects in an elderly man

The neuroleptic malignant syndrome (NMS) is an uncommon, but potentially fatal adverse event of neuroleptic medications, mainly described in polytherapy psychiatric patients. Although initially described mostly with typical neuroleptics, many atypical ones have also been associated with this syndrome more recently. An NMS is neither dose dependent nor related to the duration of the therapy. The recognized risk factors are: dehydration, stress, concomitant use of lithium, anticholinergic agents or some antidepressants. A very important and dangerous NMS complication is acute renal failure. We report an unusual case of NMS, in the absence of concomitant schizoaffective disorders. He descrive a case report of neuroleptic malignant syndrom

Improvement of electrospun polymer fiber meshes pore size by femtosecond laser irradiation

Polymer meshes have recently attracted great attention due to their great variety of aplications in fields such as tissue engineering and drug delivery. Poly( -caprolactone) nanofibers were prepared by electrospinning giving rise to porous meshes. However, for some applications in tissue engineering where, for instance, cell migration into the inner regions of the mesh is aimed, the pore size obtained by conventional techniques is too narrow. To improve the pore size, laser irradiation with femtosecond pulses (i.e., negligible heat diffusion into the polymer material and confined excitation energy) is performed. A detailed study of the influence of the pulse energy, pulse length, and number of pulses on the topography of electrospun fiber meshes has been carried out, and the irradiated areas have been studied by scanning electron microscopy, contact angle measurements and spectroscopic techniques. The results show that using the optimal laser parameters, micropores are formed and the nature of the fibers is preserved.European Integrated Project GENOSTEM (LSH-STREP-CT-2003-503161); European Network of Excellence EXPERTISSUES (NMP3-CT-2004-500283); Interreg III Project Proteus (SP1P151/03); Xunta de Galicia (Consolidación 2006/12); Axudas para adquisición de instrumentación científica 2004, PGIDIT04PXI32201IF; Ángeles Alvariño Program; Universidad de Vigo; Portuguese Foundation for Science and Technology for the PhD grant SFRH/BD/24382/2005