Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes

Destructive Single-Event Failures in Diodes

In this summary, we have shown that diodes are susceptible to destructive single-event effects, and that these failures occur along the guard ring. By determining the last passing voltages, a safe operating area can be derived. By derating off of those values, rather than by the rated voltage, like what is currently done with power MOSFETs, we can work to ensure the safety of future missions. However, there are still open questions about these failures. Are they limited to a single manufacturer, a small number, or all of them? Is there a threshold rated voltage that must be exceeded to see these failures? With future work, we hope to answer these questions. In the full paper, laser results will also be presented to verify that failures only occur along the guard ring

Use of Commercial FPGA-Based Evaluation Boards for Single-Event Testing of DDR2 and DDR3 SDRAMs

We investigate the use of commercial FPGA based evaluation boards for radiation testing DDR2 and DDR3 SDRAMs. We evaluate the resulting data quality and the tradeoffs involved in the use of these boards

Recent Radiation Test Results for Power MOSFETs

Single-event effect (SEE) and total ionizing dose (TID) test results are presented for various hardened and commercial power metal-oxide-semiconductor field effect transistors (MOSFETs), including vertical planar, trench, superjunction, and lateral process designs

NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results

Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions

Compendium of Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear, and hybrid devices

Low-Energy Proton Testing Using Cyclotrons Sources

No abstract availabl

Compendium of Current Single Event Effects Results from NASA Goddard Space Flight Center and NASA Electronic Parts and Packaging Program

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results

Compendium of Single Event Effect Results from NASA Goddard Space Flight Center

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics.This paper is a summary of test results