Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use

Burton, Noah D.

Campola, Michael J.

Casey, Megan C.

Cochran, Donna J.

LaBel, Kenneth A.

O'Bryan, Martha V.

Topper, Alyson D.

Wilcox, Edward P.

NASA Technical Reports Server

NASA Goddard Space Flight Center’s Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results
Alyson D. Topper1, Edward P. Wilcox2, Megan C. Casey2, Michael J. Campola2, Noah D. Burton1, Kenneth A. LaBel2, Donna J. Cochran1, & Martha V. O’Bryan1
Long term radiation-induced failure modes play a
significant role in determining space system reliability. In
order to determine risk to spaceflight applications, the
effects of total ionizing dose (TID) and displacement
damage dose (DDD) need to be evaluated through
ground-based testing.
The test results presented here were gathered to establish
the sensitivity of candidate spacecraft electronics to TID
and/or DDD. Proton-induced degradation, dominant for
most NASA missions, is a mix of ionizing (TID) and non-
ionizing damage. The non-ionizing damage is commonly
referred to as displacement damage. For similar results on
single event effects (SEE), a companion paper has also
been submitted to the 2018 IEEE NSREC Radiation
Effects Data Workshop entitled: “NASA Goddard Space
Flight Center’s Compendium of Recent Single Event
Effects Results," by M. O’Bryan, et al. [1]
This paper is a summary of results. Please note that these
test results can depend on operational conditions.
Introduction
Abstract: Total ionizing dose and displacement damage dose testing were performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
1. ASRC Federal Space and Defense Inc. (AS&D, Inc.), Seabrook, MD 20706 2. NASA Goddard Space Flight Center (GSFC), Code 561, Greenbelt, MD 20771
References
Summary
Acknowledgments
The authors acknowledge the sponsors of this effort: NASA Electronic Parts and
Packaging Program (NEPP), and NASA Flight Projects. The authors thank members
of the Radiation Effects and Analysis Group (REAG) who contributed to the test
results presented here: Melanie D. Berg, Stephen K. Brown, Martin A. Carts,
Stephen R. Cox, James D. Forney, Yevgeniy Gerashchenko, Hak S. Kim, Anthony
M. Phan, Ray Ladbury, Jean-Marie Lauenstein, Christina M. Seidleck, Craig
Stauffer, Scott Stansberry, Carl Szabo, Edward Wyrwas, and Mike Xapsos.
The authors would also like to thank the team at John Hopkins University/Applied 
Physics Lab (JHU/APL), especially Chi Pham and Dan Caughran. 
1. Martha V. O’Bryan, Kenneth A. LaBel, Edward P. Wilcox, Edward J. Wyrwas, Carl M.
Szabo, Michael J. Campola, Megan C. Casey, Dakai Chen, Jean-Marie Lauenstein,
Jonathan A. Pellish, and Melanie D. Berg, "NASA Goddard Space Flight Center’s
Compendium of Recent Single Event Effects Results," submitted for publication in IEEE
Radiation Effects Data Workshop, Jul. 2018.
2. Department of Defense “Test Method Standard Microcircuits,” MIL-STD-883 Test Method
1019.9 Ionizing Radiation (Total Dose) Test Procedure, June 7, 2013,
https://landandmaritimeapps.dla.mil/Downloads/MilSpec/Docs/MIL-STD-883/std883.pdf.
3. NASA/GSFC Radiation Effects and Analysis Group (REAG) home page,
http://radhome.gsfc.nasa.gov.
4. NASA Electronic Parts and Packaging (NEPP) Program home page, http://nepp.nasa.gov.
We have presented data from recent TID tests on a variety of devices. It is the
authors' recommendation that this data be used with caution due to many
application/lot-specific issues. We also highly recommend that lot testing be
performed on any suspect or commercial device. As in our past workshop compendia
of GSFC test results, each DUT has a detailed test report available online describing
in further detail, test method, TID conditions/parameters, test results, and graphs of
data [3] and [4].
Test Results and Discussion
A = Amp
BiCMOS = Bipolar – Complementary Metal 
Oxide Semiconductor 
CMOS = Complementary Metal Oxide 
Semiconductor
COTS = Commercial off-the-shelf
CTR = Current Transfer Ratio
DDD = Displacement Damage Dose
DUT = Device Under Test 
FET = Field Effect Transistor 
GSFC = Goddard Space Flight Center
HDR = High Dose Rate
hFE = Forward Current Gain 
Ib+ = Positive Bias Current 
ICon = On-State Collector Current 
ICE = Collector-Emitter Current 
ICP = Charge Pump Current
IF = Intermediate Frequency
Iio = Input Offset Current
Ios = Offset Current 
IOUT = Output Current
JFET = Junction Field Effect Transistor
LDO = Low Dropout
LED = Light Emitting Diode 
LDR = Low Dose Rate
MeV = Mega Electron Volt 
mA = milliamp 
n/a = Not Available 
Op-Amp = Operational Amplifier 
PCB = Printed Circuit Board
PI = Principal Investigator 
REAG = Radiation Effects & Analysis Group 
RF = Radio Frequency
SEE = Single Event Effects 
SMD = Surface Mount Device
Spec = Specification(s) 
TID = Total Ionizing Dose 
UCD-CNL = University of California at Davis 
– Crocker Nuclear Laboratory
V(BR)CEO = Collector-Emitter Breakdown 
Voltage
VCESAT = Collector-Emitter Saturation 
Voltage
VCO = Voltage Controlled Oscillator
VOH = Output Voltage High
Abbreviation Principal Investigator (PI)
ADT Alyson D. Topper
MCC Megan C. Casey
MJC Michael J. Campola
Total Ionizing Dose Test Results
Part Number Manufacturer LDC
Device
Function
Technology PI Sample Size Results
App. 
Spec 
(Y/N)
Dose rate 
(mrad(Si)/s)
Degradation Level 
(krad(Si))
Operational Amplifiers
AD620SQ/883B Analog Devices 1708D; (17-046) Operational Amplifier Bipolar MJC 8
Input offset current out of specification at 3.3 krad(Si), positive bias current at 5.4 krad(Si), negative 
bias current at 8.5 krad(Si).
Y 10
3.3 < Iio < 10
5.4 < Ib+ < 9
8.5 < Ib- < 15
OP484 Analog Devices 1553A; (17-072) Operational Amplifier Bipolar MCC 10
All parameters within specification up to 50 krad(Si). VOH dropped below the minimum specification 
at 75 krad(Si).
Y 10 50 < VOH < 75
Comparators
LM193 Texas Instruments 0624A; (17-054) Comparator Bipolar ADT 6 All parameters remained within specification. Y 10 > 20
ADCMP600 Analog Devices 1639; (17-067) Comparator BiCMOS MCC 10 All parameters remained within specification. Y 10 > 100
ADCMP604 Analog Devices 1551; (17-068) Comparator BiCMOS MCC 10 All parameters remained within specification. Y 10 > 100
Miscellaneous
MT29F4G08ABADAWP-IT:D Micron 1406; (16-034) Flash Memory CMOS MJC 10
One unbiased part had block errors reading back after irradiation.  No unrecoverable memory 
corruption.
Y
10 mrad(Si) and 
15.5 rad(Si)
> 40
HS-4423BEH Intersil
X1526ABBD; 
(17-071)
FET Driver Bipolar MCC 10 All parameters remained within specification. Y 10 > 100
2N5154U3 Microsemi E1624; (17-070) NPN Transistor Bipolar MCC 10 hFE1 out of specification at 50 krad(Si). Y 10 hFE1 < 50
ADF4252 Analog Devices 1637; (17-069) Frequency Synthesizer BiCMOS MCC 10 Both RF and IF charge pumps failed at 92 krad(Si). Y 10 75 < ICP < 92
ISL71590 Intersil 1527; (17-073) Temperature Transducer Bipolar MCC 10 Consistent linear decrease in output current.  Maximum output value drift of 3.5°C at 100 krad(Si). Y 10 0 < x < 50
Part Number Manufacturer LDC
Device
Function
Technology PI Sample Size Results
App. 
Spec 
(Y/N)
Proton Fluence (/cm2)
OPB847 Optek Technologies M1713A; (17-041) Optical Switch Hybrid MJC 10
On-State Collector Current out of specification at 2.18x1010 cm-2, Collector-Emitter Saturation 
Voltage out of specification at 9.29x1010 cm-2.
Y
ICon < 2.18x10
10cm-2
VCESAT < 9.29x10
10cm-2
ACPL-785E Avago 1649; (17-047) Optocoupler Hybrid MJC 10 All parameters remained within specification. Y 1.49x1011
TUD69H1B
Sensor Electronics 
Technology, Inc.
n/a; (17-059) LED AlGaN MCC 4 Glass darkening. No change in the forward I-V curve up to 9.4E11 cm-2. N 9.4x1011
TUD89H1B
Sensor Electronics 
Technology, Inc.
n/a; (17-060) LED AlGaN MCC 4 Glass darkening. No change in the forward I-V curve up to 9.4E11 cm-2. N 9.4x1011
TCE49H1B
Sensor Electronics 
Technology, Inc.
n/a; (17-063) LED AlGaN MCC 4 Glass darkening. No change in the forward I-V curve up to 3.3E13 cm-2. N
9.4x1011
3 DUTs at 3.3x1013
AD620SQ/883B, Analog Devices, Operational Amplifier
The AD620SQ/883B is an instrumentation amplifier featuring high accuracy and low noise. A gain range from 1 to
10,000 is programmable with an external resistor. Eight AD620SQ parts were irradiated for TID testing at 10
mrad(Si)/s to a total dose of 25 krad(Si). Four parts were biased during irradiation and four were unbiased with two
parts reserved as controls. Input offset current increased beyond specification at 3.3 krad(Si). Positive input bias
current exceeded specification after 5.4 krad(Si). Negative input bias current and both power supply rejection
ratios (gain at 1 and 10) failed at 8.5 krad(Si). After irradiation, the parts were annealed at room temperature for
212 hours. All measurements returned to specification or near specification after the 212 hour annealing period.
Fig. 1 shows the input offset current over dose step and annealing. Fig. 2 displays the gain error at gain equal to
ten over dose step and annealing.
PIs Coordinating Testing
Acronyms
Displacement Damage Dose Test Results
Alyson D. Topper
Facility Proton Energy (MeV)
University of California at Davis - Crocker 
Nuclear Laboratory (UCD - CNL)
63
Proton Test Facility
Figure 1. Input offset current vs. dose (krad(Si)) and
annealing time.
Figure 2. Gain error at gain = 10 vs. dose (krad(Si)) and
annealing time.
ADF4252, Analog Devices, 
Frequency Synthesizer
The ADF4252 is a dual RF/IF
frequency synthesizer for wireless
receivers and transmitters,
capable of multiplying or dividing
an input reference signal to fully
implement a phase-locked loop
when paired with an external
voltage controlled oscillator
(VCO). The ADF4252 is
programmed with an SPI-
compatible serial interface which
configures the on-chip mode
registers.
Due to the small package size and
external component requirements,
each device was soldered to a
custom-designed PCB with a test
circuit capable of measuring a
typical set of performance and
operational metrics. A total of
twenty parts, with ten biased at
nominal voltages and ten
grounded, were irradiated at a rate
of 10 mrad(Si)/s to a total dose of
100 krad(Si).
Figure 4. RF charge pump sourcing current (biased DUTs) vs. dose.
with proton fluence. Six DUTs exceeded the VCE(SAT) limit at
OPB847, OPTEK Technology, Optical 
Switch
The OPB847 is a 110-V slotted optical
switch with a gallium arsenide LED and
silicon phototransistor. Ten parts were
tested for DDD effects at Crocker Nuclear
Laboratory at University of California at
Davis (UCD-CNL). Five were biased and
five were unbiased during irradiation, with
two parts reserved as controls.
On-state collector current (IcON) showed
an immediate decrease after the first
fluence step. This parameter exceeded
the manufacturer’s specification,
consistently across all parts, at 2.18 x 1010
p+/cm2. Collector-Emitter Saturation
Voltage (VCE(SAT)) and Collector-Emitter
Breakdown Voltage (V(BR)CEO) increased
Figure 3. CTR (Collector current divided by forward diode current) vs.
fluence (p+/cm2).
The logical high and low voltages, main supply voltage current, and
the charge pump supply current showed no appreciable
degradation during irradiation. Only degradation was seen during
irradiation on the following parameters; quiescent supply current at
75 krad(Si) and charge pump supply current at 92 krad(Si).
Notably at 92 krad(Si), the charge pumps of the biased parts began
to fail. By the 100 krad(Si) measurement, eight out of the ten
biased DUTs were no longer functioning. Fig. 4 shows the sudden
current drop over dose of the biased devices.
National Aeronautics and
Space Administration
9.29 x 1010 p+/cm2 and all remaining parts except one failed at the next fluence step. DUT 6 failed at the final
irradiation step of 1.49 x 1011 p+/cm2. Fig. 3 displays the Current Transfer Ratio (CTR) over proton fluence. The
unbiased parts were unmeasurable after 1.12 x 1011 p+/cm2 step.
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0 5E+10 1E+11 1.5E+11
C
TR
Fluence (p+/cm2)
Current Transfer Ratio
Controls
Unbiased
Biased
5 x1010  x1011 1.5 x1011
0.00E+00
1.00E-03
2.00E-03
3.00E-03
4.00E-03
5.00E-03
0 20 40 60 80 100 120
C
u
rr
e
n
t 
(A
)
Dose (krad(Si))
RF Charge Pump Sourcing Current
DUT 1
DUT 2
DUT 3
DUT 4
DUT 5
DUT 6
DUT 7
DUT 8
DUT 9
DUT 10
CTL
5.0 x 10-
4.0 x 10-3
3.0 x 10-3
2.0 x 10-3
1.0 x 10-3
0
Nominal (Programmed)
Current:  4.375 mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0 5 10 15 20 25 30 35 40 45 50
G
ai
n
 E
rr
o
r 
at
 G
 =
 1
0
 (
%
)
Dose (krad(Si))
Gain Error at G = 10
Unbiased
Biased
Control
Spec
93.8
hrs
212.3
hrs
25.5
hrs
47.3
hrs0.01
0.1
1
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40 45
I io
(n
A
)
Dose (krad(Si))
Input Offset Current 
Unbiased
Biased
Control
Spec
93.8
hrs
212.3
hrs
25.5
hrs
47.3
hrs
To be presented by Alyson Topper at the 2018 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC), Kona, Hawaii, July 19, 2018.
https://ntrs.nasa.gov/search.jsp?R=20180004821 2019-08-31T15:37:43+00:00Z


NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results

NASA Goddard Space Flight Center's Compendium of Recent Total Ionizing Dose and Displacement Damage Dose Results

Abstract

Similar works

Full text

Available Versions

NASA Technical Reports Server