Confinement of superconducting fluctuations due to emergent electronic inhomogeneities

The microscopic nature of an insulating state in the vicinity of a superconducting state, in the presence of disorder, is a hotly debated question. While the simplest scenario proposes that Coulomb interactions destroy the Cooper pairs at the transition, leading to localization of single electrons, an alternate possibility supported by experimental observations suggests that Cooper pairs instead directly localize. The question of the homogeneity, granularity, or possibly glassiness of the material on the verge of this transition is intimately related to this fundamental issue. Here, by combining macroscopic and nano-scale studies of superconducting ultrathin NbN films, we reveal nanoscopic electronic inhomogeneities that emerge when the film thickness is reduced. In addition, while thicker films display a purely two-dimensional behaviour in the superconducting fluctuations, we demonstrate a zero-dimensional regime for the thinner samples precisely on the scale of the inhomogeneities. Such behavior is somehow intermediate between the Fermi and Bose insulator paradigms and calls for further investigation to understand the way Cooper pairs continuously evolve from a bound state of fermionic objects into localized bosonic entities.Comment: 29 pages 9 figure

Origin of compositional differences in organic matter abundance and oil potential of cherty and clayey Cenomanian black levels in the Umbria-Marche basin (Italy).

International audienceRock-Eval pyrolysis of a large set of Cenomanian samples, collected from the black levels (clayey, cherty and mixed) in three sections of the Umbria-Marche basin, showed large differences in organic matter (OM) quantity and quality. The chert samples systematically exhibit much lower TOC contents, markedly lower HI and higher OI. This reflects the extensive oxidative destruction of the initial kerogen that occurred upon the chertification of some clayey sediments. A comparative study, by a combination of microscopic, spectroscopic and pyrolytic methods, was performed on kerogens of the chert and clay layers of a representative mixed level. The various fractions of the initial kerogen underwent differential destruction or alteration during chertification, resulting in (i) relative enrichments of microfossils and woody debris although lignin was altered by demethoxylation and (ii) extensive destruction of the amorphous fraction while it remained predominant. The amorphous fraction retained in the chert kerogen showed large changes in composition related to oxygen incorporation and probably escaped complete destruction owing to oxidative reticulation. The above features account for the pronounced systematic differences in OM abundance and oil potential between the chert and clay layers in the black levels

Evidence for the formation of two phases during the growth of SrTiO3 on silicon

International audienceEpitaxial SrTiO3 (STO)/Si templates open a unique opportunity for the integration of ferroelectric oxides, such as BaTiO3 on silicon and for the realization of new devices exploiting ferroelectricity. STO itself has been shown as ferroelectric at room temperature when deposited in thin layers on Si, while bulk STO is tetragonal and, thus, ferroelectric below 105 K. Here, we demonstrate the coexistence, at room temperature, of strained cubic and tetragonal phases in thin STO/Si layers. The tetragonal STO phase presents a pronounced tetragonality for thicknesses up to 24 ML. Above this thickness, the strained cubic STO phase starts relaxing while the tetragonal STO phase progressively transits to cubic STO. The origin of the simultaneous formation of these two phases is analyzed and is attributed to oxygen segregation at the early stages of the growth

An aqueous one-pot route to gold/quantum rod heterostructured nanoparticles functionalized with DNA

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Occurrence of proteinaceous moieties in S-and O-rich Late Tithonian kerogen (Kashpir oil Shales, Russia)

Abstract The polar fraction, isolated from the o-line pyrolysate at 400 C of a Late Tithonian, sulphur-and oxygen-rich, kerogen was examined via Raney Nickel desulphurization and TMAH thermochemolysis. Important information on this kerogen, not accessible via conventional pyrolysis, was thus obtained: (i) its structure is not simply based on alkyl skeletons cross-linked by ether and (poly)sulphide bridges, (ii) TMAH thermochemolysis aorded direct evidence of the survival of proteinaceous moieties in this 140 million years old kerogen and (iii) encapsulation within an aliphatic organic matrix was probably the main pathway reponsible for such a conspicuous preservation, also possibly favoured by the presence of numerous sulphur links.

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade

Abrupt GaP/Si hetero-interface using bistepped Si buffer

We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth