Field emission in ordered arrays of ZnO nanowires prepared by nanosphere lithography and extended Fowler-Nordheim analyses

A multistage chemical method based on nanosphere lithography was used to produce hexagonally patterned arrays of ZnO vertical nanowires, with 1 lm interspacing and aspect ratio 20, with a view to study the effects of emitter uniformity on the current emitted upon application of a dc voltage across a 250 lm vacuum gap. A new treatment, based on the use of analytical expressions for the image-potential correction functions, was applied to the linear region below 2000 V of the Fowler-Nordheim (FN) plot and showed the most suitable value of the work function / in the range 3.3–4.5 eV (conduction band emission) with a Schottky lowering parameter y ~ 0.72 and a field enhancement factor c in the 700–1100 range. A modeled c value of 200 was calculated for an emitter shape of a prolate ellipsoid of revolution and also including the effect of nanowire screening, in fair agreement with the experimental value. The Fowler-Nordheim current densities and effective emission areas were derived as 1011 Am2 and 1017 m2, respectively, showing that field emission likely takes place in an area of atomic dimensions at the tip of the emitter. Possible causes for the observed departure from linear FN plot behavior above 2000 V were discussed

Random Scattering by Atomic Density Fluctuations in Optical Lattices

We investigate hitherto unexplored regimes of probe scattering by atoms trapped in optical lattices: weak scattering by effectively random atomic density distributions and multiple scattering by arbitrary atomic distributions. Both regimes are predicted to exhibit a universal semicircular scattering lineshape for large density fluctuations, which depend on temperature and quantum statistics.Comment: 4 pages, 2 figure

Quantum fluids of light

This article reviews recent theoretical and experimental advances in the fundamental understanding and active control of quantum fluids of light in nonlinear optical systems. In presence of effective photon-photon interactions induced by the optical nonlinearity of the medium, a many-photon system can behave collectively as a quantum fluid with a number of novel features stemming from its intrinsically non-equilibrium nature. We present a rich variety of photon hydrodynamical effects that have been recently observed, from the superfluid flow around a defect at low speeds, to the appearance of a Mach-Cherenkov cone in a supersonic flow, to the hydrodynamic formation of topological excitations such as quantized vortices and dark solitons at the surface of large impenetrable obstacles. While our review is mostly focused on a class of semiconductor systems that have been extensively studied in recent years (namely planar semiconductor microcavities in the strong light-matter coupling regime having cavity polaritons as elementary excitations), the very concept of quantum fluids of light applies to a broad spectrum of systems, ranging from bulk nonlinear crystals, to atomic clouds embedded in optical fibers and cavities, to photonic crystal cavities, to superconducting quantum circuits based on Josephson junctions. The conclusive part of our article is devoted to a review of the exciting perspectives to achieve strongly correlated photon gases. In particular, we present different mechanisms to obtain efficient photon blockade, we discuss the novel quantum phases that are expected to appear in arrays of strongly nonlinear cavities, and we point out the rich phenomenology offered by the implementation of artificial gauge fields for photons.Comment: Accepted for publication on Rev. Mod. Phys. (in press, 2012

Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures

We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring (QD/QR) samples over ≥5 orders of magnitude of laser power. All samples exhibit a blueshift of PL energy, ΔE, with increasing excitation power, as expected for type-II structures. It is often assumed that this blueshift is due to band-bending at the type-II interface. However, for a sample where charge-state sub-peaks are observed within the PL emission, it is unequivocally shown that the blueshift due to capacitive charging is an order of magnitude larger than the band bending contribution. Moreover, the size of the blueshift and its linear dependence on occupancy predicted by a simple capacitive model are faithfully replicated in the data. In contrast, when QD/QR emission intensity, I, is used to infer QD/QR occupancy, n, via the bimolecular recombination approximation (I ∝ n 2), exponents, x, in Δ E ∝ I x are consistently lower than expected, and strongly sample dependent. We conclude that the exponent x cannot be used to differentiate between capacitive charging and band bending as the origin of the blueshift in type-II QD/QRs, because the bimolecular recombination is not applicable to type-II QD/QRs

Response theory for time-resolved second-harmonic generation and two-photon photoemission

A unified response theory for the time-resolved nonlinear light generation and two-photon photoemission (2PPE) from metal surfaces is presented. The theory allows to describe the dependence of the nonlinear optical response and the photoelectron yield, respectively, on the time dependence of the exciting light field. Quantum-mechanical interference effects affect the results significantly. Contributions to 2PPE due to the optical nonlinearity of the surface region are derived and shown to be relevant close to a plasmon resonance. The interplay between pulse shape, relaxation times of excited electrons, and band structure is analyzed directly in the time domain. While our theory works for arbitrary pulse shapes, we mainly focus on the case of two pulses of the same mean frequency. Difficulties in extracting relaxation rates from pump-probe experiments are discussed, for example due to the effect of detuning of intermediate states on the interference. The theory also allows to determine the range of validity of the optical Bloch equations and of semiclassical rate equations, respectively. Finally, we discuss how collective plasma excitations affect the nonlinear optical response and 2PPE.Comment: 27 pages, including 11 figures, version as publishe

Electrodynamics of Correlated Electron Materials

We review studies of the electromagnetic response of various classes of correlated electron materials including transition metal oxides, organic and molecular conductors, intermetallic compounds with $d$- and $f$-electrons as well as magnetic semiconductors. Optical inquiry into correlations in all these diverse systems is enabled by experimental access to the fundamental characteristics of an ensemble of electrons including their self-energy and kinetic energy. Steady-state spectroscopy carried out over a broad range of frequencies from microwaves to UV light and fast optics time-resolved techniques provide complimentary prospectives on correlations. Because the theoretical understanding of strong correlations is still evolving, the review is focused on the analysis of the universal trends that are emerging out of a large body of experimental data augmented where possible with insights from numerical studies.Comment: 78 pages, 55 figures, 984 reference

Localization-enhanced biexciton binding in semiconductors

The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1−xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton

Monte Carlo simulation of ultrafast processes in photoexcited semiconductors: Coherent and incoherent dynamics

The ultrafast dynamics of photoexcited carriers in a semiconductor is investigated by using a Monte Carlo simulation. In addition to a ‘‘conventional’’ Monte Carlo simulation, the coherence of the external light field and the resulting coherence in the carrier system are fully taken into account. This allows us to treat the correct time dependence of the generation process showing a time-dependent linewidth associated with a recombination from states off resonance due to stimulated emission. The subsequent dephasing of the carriers due to scattering processes is analyzed. In addition, the simulation contains the carrier-carrier interaction in Hartree-Fock approximation giving rise to a band-gap renormalization and excitonic effects which cannot be treated in a conventional Monte Carlo simulation where polarization effects are neglected. Thus the approach presents a unified numerical method for the investigation of phenomena occurring close to the band gap and those typical for the energy relaxation of hot carriers