Study of mechanical response in embossing of ceramic green substrate by micro-indentation

Micro-indentation test with a micro flat-end cone indenter was employed to simulate micro embossing process and investigate the thermo-mechanical response of ceramic green substrates. The laminated low temperature co-fired ceramic green tapes were used as the testing material ; the correlations of indentation depth versus applied force and applied stress at the temperatures of 25 degrees C and 75degrees C were studied. The results showed that permanent indentation cavities could be formed at temperatures ranging from 25 degrees C to 75 degrees C, and the depth of cavities created was applied force, temperature and dwell time dependent. Creep occurred and made a larger contribution to the plastic deformation at elevated temperatures and high peak loads. There was instantaneous recovery during the unloading and retarded recovery in the first day after indentation. There was no significant pile-up due to material flow observed under compression at the temperature up to 75 degrees C. The plastic deformation was the main cause for formation of cavity on the ceramic green substrate under compression. The results can be used as a guideline for embossing ceramic green substrates.Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838

DsJ+(2632)D_{sJ}^+(2632): An Excellent Candidate of Tetraquarks

We analyze various possible interpretations of the narrow state $D_{sJ}(2632)$ which lies 100 MeV above threshold. This interesting state decays mainly into $D_s \eta$ instead of $D^0 K^+$. If this relative branching ratio is further confirmed by other experimental groups, we point out that the identification of $D_{sJ}(2632)$ either as a $c\bar s$ state or more generally as a ${\bf {\bar 3}}$ state in the $SU(3)_F$ representation is probably problematic. Instead, such an anomalous decay pattern strongly indicates $D_{sJ}(2632)$ is a four quark state in the $SU(3)_F$ ${\bf 15}$ representation with the quark content ${1\over 2\sqrt{2}} (ds\bar{d}+sd\bar{d}+su\bar{u}+us\bar{u}-2ss\bar{s})\bar{c}$. We discuss its partners in the same multiplet, and the similar four-quark states composed of a bottom quark $B_{sJ}^0(5832)$. Experimental searches of other members especially those exotic ones are strongly called for

Overall properties of the Gaia DR1 reference frame

We compare quasar positions of the auxiliary quasar solution with ICRF2 sources using different samples and evaluate the influence on the {\it Gaia} DR1 reference frame owing to the Galactic aberration effect over the J2000.0-J20015.0 period. Then we estimate the global rotation between TGAS with {\it Tycho}-2 proper motion systems to investigate the property of the {\it Gaia} DR1 reference frame. Finally, the Galactic kinematics analysis using the K-M giant proper motions is performed to understand the property of {\it Gaia} DR1 reference frame. The positional comparison between the auxiliary quasar solution and ICRF2 shows negligible orientation and validates the declination bias of $\sim$$-0.1$\mas~in {\it Gaia} quasar positions with respect to ICRF2. Galactic aberration effect is thought to cause an offset $\sim$$0.01$\mas~of the $Z$ axis direction of {\it Gaia} DR1 reference frame. The global rotation between TGAS and {\it Tycho}-2 proper motion systems, obtained by different samples, shows a much smaller value than the claimed value $0.24$\masyr. For the Galactic kinematics analysis of the TGAS K-M giants, we find possible non-zero Galactic rotation components beyond the classical Oort constants: the rigid part $\omega_{Y_G} = -0.38 \pm 0.15$\masyr~and the differential part $\omega^\prime_{Y_G} = -0.29 \pm 0.19$\masyr~around the $Y_G$ axis of Galactic coordinates, which indicates possible residual rotation in {\it Gaia} DR1 reference frame or problems in the current Galactic kinematical model.Comment: 6 pages, 1 figure. Accepted for publication in A&

Pipelined digital SAR azimuth correlator using hybrid FFT-transversal filter

A synthetic aperture radar system (SAR) having a range correlator is provided with a hybrid azimuth correlator which utilizes a block-pipe-lined fast Fourier transform (FFT). The correlator has a predetermined FFT transform size with delay elements for delaying SAR range correlated data so as to embed in the Fourier transform operation a corner-turning function as the range correlated SAR data is converted from the time domain to a frequency domain. The azimuth correlator is comprised of a transversal filter to receive the SAR data in the frequency domain, a generator for range migration compensation and azimuth reference functions, and an azimuth reference multiplier for correlation of the SAR data. Following the transversal filter is a block-pipelined inverse FFT used to restore azimuth correlated data in the frequency domain to the time domain for imaging

Resonant systems for dynamic evaluation of pressure transducers

Tests were conducted with contrived inlet modulated sinusoidal pressure generator to study possible use in calibrating pressure sensors. Results indicate concept is feasible and applicable to transducer evaluation

Phase Diffusion in Single-Walled Carbon Nanotube Josephson Transistors

We investigate electronic transport in Josephson junctions formed by single-walled carbon nanotubes coupled to superconducting electrodes. We observe enhanced zero-bias conductance (up to 10e^2/h) and pronounced sub-harmonic gap structures in differential conductance, which arise from the multiple Andreev reflections at superconductor/nanotube interfaces. The voltage-current characteristics of these junctions display abrupt switching from the supercurrent branch to resistive branch, with a gate-tunable switching current ranging from 50 pA to 2.3 nA. The finite resistance observed on the supercurrent branch and the magnitude of the switching current are in good agreement with calculation based on the model of classical phase diffusion

Role of Interlayer Coupling on the Evolution of Band Edges in Few-Layer Phosphorene

Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and its valence band edge is extremely sensitive to strain. Its band gap could undergo an indirect-to-direct transition under a lattice expansion as small as 1% along zigzag direction. A semi-empirical interlayer coupling model is proposed, which can well reproduce the evolution of valence band-edges obtained by first-principles calculations. We conclude that the interlayer coupling plays a dominated role in the evolution of the band-edges via decreasing both band gap and carrier effective masses with the increase of phosphorene thickness. A scrutiny of the orbital-decomposed band structure provides a better understanding of the upward shift of valence band maximum surpassing that of conduction band minimum.Comment: 25 pages, 9 figure