Electromigration Behavior of 3D-IC TSV Interconnects

International audienceThe electromigration (EM) behavior of Through Silicon Via (TSV) interconnects used for 3D integration is studied. Impact of the TSV section size on EM lifetime and consideration of increasing metal level thickness are reported. Void nucleates and grows right after TSV, in the adjacent metal level. The TSV section size at metal level interface is critical for high EM performance. Thickness increase of metal level is revealed to not directly increase EM robustness, since irregular void nucleation and growth impact expected performances

Reliability approach of high density Through Silicon Via (TSV)

ISBN 978-1-4244-8561-1International audienceThis paper focuses on the link between initial electrical resistance of Through Silicon Via (TSV), and possible failure occurring during Thermal Cycling Test (TCT) and electromigration (EM) tests. Physical analyses reveal the presence of a carbon impurity layer at bottom of the higher resistance TSVs. This impurity induces failure during TCT, but has no impact on EM time to failure distribution. We also discuss the relevance of different electrical resistance failure criterions after TCT for a single TSV

Electromigration Behavior of 3D-IC TSV

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Electromigration Behavior of 3D-IC TSV

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Resistance Increase Due to Electromigration Induced Depletion Under TSV

ISBN 978-1-4244-9111-7International audience3D-IC integration using Through Silicon Via (TSV) is becoming an alternative to overcome obstacles of CMOS scaling. As TSV processes reach maturity, reliability investigation becomes critical. To the best of our knowledge, we propose for the first time an analytical model of resistance increase due to electromigration induced voiding in a line ended by a TSV

DETERMINISTIC LATERAL DISPLACEMENT FOR THE SORTING OF EXTRACELLULAR VESICLES FROM COMPLEX BIOLOGICAL SAMPLES

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Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric

International audienceIn this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies. First part presents an exhaustive analysis of Cu TSV-last approach of 2 μm diameter and 15 μm of depth. Thermal cycling and electromigration stresses are performed on dedicated devices. Thermal cycling is revealed to induce only defects on non-mature processes. Electromigration induces voids in adjacent metal level, right at TSV interface. Moreover, the expected lifetime benefit by increasing line thickness does not occur due to increasing dispersion of voiding mechanism. Second part covers reliability of Cu TSV-middle technology, of 10 μm diameter and 80 μm depth, with thermal cycling, BEoL dielectric breakdown, and electromigration study. Thermal cycling is assessed on two designs: isolated and dense TSV patterns. Dielectric breakdown tests underline an impact of TSV on the reliability of metal level dielectrics right above TSV. Electromigration reveal similar degradation mechanism and kinetic as on TSV-last approach

Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs

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Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs

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Infarct Artery Distribution and Clinical Outcomes in Occluded Artery Trial Subjects Presenting With Non ST-Segment Elevation Myocardial Infarction (from the Long-Term Follow-up of Occluded Artery Trial [OAT])

We hypothesized that the insensitivity of the electrocardiogram. in identifying acute circumflex occlusion would result in differences in the distribution of the infarct-related artery (IRA) between patients with non ST-segment elevation myocardial infarction (NSTEMI) and STEMI enrolled in the Occluded Artery Trial. We also sought to evaluate the effect of percutaneous coronary intervention to the IRA on the clinical outcomes for patients with NSTEMI. Overall, those with NSTEMI constituted 13% (n = 283) of the trial population. the circumflex IRA was overrepresented in the NSTEMI group compared to the STEM! group (42.5 vs 11.2%; p < 0.0001). the 7-year clinical outcomes for the patients with NSTEMI randomized to percutaneous coronary intervention and optimal medical therapy versus optimal medical therapy alone were similar for the primary composite of death, myocardial infarction, and class W congestive heart failure (22.3% vs 20.2%, hazard ratio 1.20, 99% confidence interval 0.60 to 2.40; p = 0.51) and the individual end points of death (13.8% vs 17.0%, hazard ratio 0.82, 99% confidence interval 0.37 to 1.84; p = 0.53), myocardial infarction (6.1 vs 5.1%, hazard ratio 1.11, 99% confidence interval 0.28 to 4.41; p = 0.84), and class IV congestive heart failure (6.7% vs 6.0%, hazard ratio 1.50, 99% confidence interval 0.37 to 6.02; p = 0.45). No interaction was seen between the electro-cardiographically determined myocardial infarction type and treatment effect (p = NS). in conclusion, the occluded circumflex IRA is overrepresented in the NSTEMI population. Consistent with the overall trial results, stable patients with NSTEMI and a totally occluded IRA did not benefit from randomization to percutaneous coronary intervention. (C) 2013 Elsevier Inc. All rights reserved. (Am J Cardiol 2013;111:930-935)National Heart, Lung, and Blood Institute, Bethesda, MarylandCleveland Clin, Dept Cardiovasc Med, Cleveland, OH 44106 USANatl Inst Cardiol, Warsaw, PolandUniversidade Federal de São Paulo, Hosp São Paulo, São Paulo, BrazilUniversidade Federal de São Paulo, Dept Cardiol Invas Cardiol, São Paulo, BrazilClin Trials & Surveys Corp, Baltimore, MD USAReg Hosp, Dept Cardiol, Torun, PolandColumbia Univ, Mt Sinai Med Ctr, Div Cardiol, Miami Beach, FL USAMed Univ Warsaw, Dept Cardiol 1, Warsaw, PolandCtr Hop Louis Pasteur, Serv Cardiol, Chartres, FranceTechnion Israel Inst Technol, Rappaport Fac Med, Haifa, IsraelNYU, Sch Med, Div Cardiol, New York, NY USAUniversidade Federal de São Paulo, Hosp São Paulo, São Paulo, BrazilUniversidade Federal de São Paulo, Dept Cardiol Invas Cardiol, São Paulo, BrazilNational Heart, Lung, and Blood Institute, Bethesda, Maryland: U01 HL062509National Heart, Lung, and Blood Institute, Bethesda, Maryland: U01 HL062511Web of Scienc