Anghel, Lorena

Arnaud, L.

Chappaz, C.

Frank, T.

Leduc, P.

Lorut, F.

Moreau, S.

Thuaire, Aurélie

HAL-INSU

Electromigration Behavior of 3D-IC TSV

HAL Université de Savoie

International audienceThe electromigration (EM) behavior of Through Silicon Via (TSV) interconnects used for 3D integration is studied. Impact of the TSV section size on EM lifetime and consideration of increasing metal level thickness are reported. Void nucleates and grows right after TSV, in the adjacent metal level. The TSV section size at metal level interface is critical for high EM performance. Thickness increase of metal level is revealed to not directly increase EM robustness, since irregular void nucleation and growth impact expected performances

Thuaire, A.

Hal - Université Grenoble Alpes

Electromigration Behavior of 3D-IC TSV Interconnects

HAL Université de Tours

HAL Descartes

HAL-CEA

https://hal.archives-ouvertes.fr/hal-00651930

Electromigration Behavior of 3D-IC TSV

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HAL-INSU

HAL Université de Savoie

Hal - Université Grenoble Alpes

Hal - Université Grenoble Alpes

HAL Université de Tours

HAL Descartes

HAL-CEA