Anomalous Raman Modes in Tellurides

Two broad bands are usually found in the Raman spectrum of many Te-based chalcogenides, which include binary compounds, like ZnTe, CdTe, HgTe, GaTe, GeTe, SnTe, PbTe, GeTe2, As2Te3, Sb2Te3, Bi2Te3, NiTe2, IrTe2, TiTe2, as well as ternary compounds, like GaGeTe, SnSb2Te4, SnBi2Te4, and GeSb2Te5. Many different explanations have been proposed in the literature for the origin of these two anomalous broad bands in tellurides, usually located between 119 and 145 cm-1. They have been attributed to the own sample, to oxidation, to the folding of Brillouin-edge modes onto the zone center, to the existence of a double resonance, like that of graphene, or to the formation of Te precipitates. In this paper, we provide arguments to demonstrate that such bands correspond to clusters or precipitates of trigonal Te in form of nanosize or microsize grains or layers that are segregated either inside or at the surface of the samples. Several mechanisms for Te segregation are discussed and sample heating caused by excessive laser power during Raman scattering measurements is emphasized. Finally, we show that anomalous Raman modes related to Se precipitates also occur in selenides, thus providing a general vision for a better characterization of selenides and tellurides by means of Raman scattering measurements and for a better understanding of chalcogenides in general.Comment: 45 pages, 8 figure

Lattice dynamics of Sb2Te3 at high pressures

We report an experimental and theoretical lattice dynamics study of antimony telluride (Sb 2Te 3) up to 26 GPa together with a theoretical study of its structural stability under pressure. Raman-active modes of the low-pressure rhombohedral (R-3m) phase were observed up to 7.7 GPa. Changes of the frequencies and linewidths were observed around 3.5 GPa where an electronic topological transition was previously found. Raman-mode changes evidence phase transitions at 7.7, 14.5, and 25GPa. The frequencies and pressure coefficients of the new phases above 7.7 and 14.5 GPa agree with those calculated for the monoclinic C2/m and C2/c structures recently observed at high pressures in Bi 2Te 3 and also for the C2/m phase in the case of Bi 2Se 3 and Sb 2Te 3. Above 25 GPa no Raman-active modes are observed in Sb 2Te 3, similarly to the case of Bi 2Te 3 and Bi 2Se 3. Therefore, it is possible that the structure of Sb 2Te 3 above 25 GPa is the same disordered bcc phase already found in Bi 2Te 3 by x-ray diffraction studies. Upon pressure release, Sb 2Te 3 reverts back to the original rhombohedral phase after considerable hysteresis. Raman- and IR-mode symmetries, frequencies, and pressure coefficients in the different phases are reported and discussed. © 2011 American Physical Society.This work has been done under financial support from Spanish MICINN under Project Nos. MAT2010-21270-C04-03/04 and CSD-2007-00045 and supported by the Ministry of Education, Youth and Sports of the Czech Republic (MSM 0021627501). E. P.-G. acknowledges the financial support of the Spanish MEC under a FPI fellowship. Supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster.Gomis Hilario, O.; Vilaplana Cerda, RI.; Manjón Herrera, FJ.; Rodríguez-Hernández, P.; Pérez-González, E.; Muñoz, A.; Kucek, V.... (2011). 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Strong interband Faraday rotation in 3D topological insulator Bi2Se3

The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in which time-reversal symmetry has been broken by an externally applied magnetic field. Here we report on the Faraday rotation induced in the prominent 3D topological insulator Bi2Se3 due to bulk interband excitations. The origin of this non-resonant effect, extraordinarily strong among other non-magnetic materials, is traced back to the specific Dirac-type Hamiltonian for Bi2Se3, which implies that electrons and holes in this material closely resemble relativistic particles with a non-zero rest mass

Layered topological semimetal GaGeTe: New polytype with non-centrosymmetric structure

[EN] GaGeTe is a layered van der Waals material composed of germanene and GaTe sublayers that has been recently predicted to be a basic Z2 topological semimetal. To date, only one polytype of GaGeTe is known with trigonal centrosymmetric structure (a phase, space group R-3m, No. 166). Here we show that asgrown samples of GaGeTe show traces of at least another polytype with hexagonal noncentrosymmetric structure (f3 phase, space group P63mc, No. 186). Moreover, we suggest that another bulk hexagonal polytype (g phase, space group P-3m1, No. 164) could also be found near room conditions. Both a and f3 polytypes have been identified and characterized by means of X-ray diffraction and Raman scattering measurements with the support of ab initio calculations. We provide the vibrational properties of both polytypes and show that the Raman spectrum reported for GaGeTe almost forty years ago and attributed to the a phase, was, in fact, that of the secondary f3 phase. Additionally, we show that a Fermi resonance occurs in a-GaGeTe under non-resonant excitation conditions, but not under resonant excitation conditions. Theoretical calculations show that bulk f3-GaGeTe is a non-centrosymmetric weak topological semimetal with even smaller lattice thermal conductivity than centrosymmetric bulk aGaGeTe. In perspective, our work paves the way for the control and engineering of GaGeTe polytypes to design and implement complex van der Waals heterostructures formed by a combination of centrosymmetric and non-centrosymmetric layers of up to three different polytypes in a single material, suitable for a number of fundamental studies and technological applications.This publication is part of the project MALTA Consolider Team network (RED2018-102612-T) , financed by MINECO/AEI/10.13039/501100003329; by I ? D ? i projects PID2019-106383 GB -41/42/43 financed by MCIN/AEI/10.13039/501100011033; and by project PROMETEO/2018/123 (EFIMAT) financed by Generalitat Valenciana. E.B. would like to thank the Universitat Politecnica de Valencia for his postdoctoral contract (Ref. PAID -10-21) . AHR was supported by the U.S. Department of Energy (DOE) , Office of Science, Basic Energy Sciences under award DE-SC0021375. We also acknowledge the computational resources awarded by XSEDE, a project supported by National Science Foundation grant number ACI-1053575. The authors also acknowledge the support from the Texas Advances Computer Center (with the Stampede2 and Bridges supercom- puters) . E.L.d.S would like to acknowledge the Network of Extreme Conditions Laboratories (NECL) , financed by FCT and co -financed by NORTE 2020, through the program Portugal 2020 and FEDER; the High Performance Computing Chair-a R & D infrastructure (based at the University of ? Evora; PI: M. Avillez) ; and for the computational support provided by the HPC center OBLIVION -U. ? Evora to perform the lattice thermal conductivity calculations. A.L. and D.E. would like to thank the Generalitat Valenciana for the Ph.D. Fellowship no. GRISOLIAP/2019/025.Gallego-Parra, S.; Bandiello, E.; Liang, A.; Da Silva, EL.; Rodriguez-Hernandez, P.; Muñoz, A.; Radescu, S.... (2022). Layered topological semimetal GaGeTe: New polytype with non-centrosymmetric structure. Materials Today Advances. 16:1-16. https://doi.org/10.1016/j.mtadv.2022.1003091161

Multi-band magnetotransport in exfoliated thin films of Cu<i>_x</i>Bi₂Se₃

We report magnetotransport studies in thin (100nm indicating the presence of topologically protected surface states

Structural and vibrational study of Bi2Se3 under high pressure

The structural and vibrational properties of bismuth selenide (Bi2Se3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been complemented with ab initio total-energy and lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral (R-3m) phase (B-Bi2Se3) with sixfold coordination for Bi to a monoclinic C2/m structure (B-Bi2Se3) with sevenfold coordination for Bi above 10 GPa. The equation of state and the pressure dependence of the lattice parameters and volume of a and B phases of Bi2Se3 are reported. Furthermore, the presence of a pressure-induced electronic topological phase transition in B-Bi2Se3 is discussed. Raman measurements evidence that Bi2Se3 undergoes two additional phase transitions around 20 and 28 GPa, likely toward a monoclinic C2/c and a disordered body-centered cubic structure with 8-fold and 9- or 10-fold coordination, respectively. These two high-pressure structures are the same as those recently found at high pressures in Bi2Te3 and Sb2Te3. On pressure release, Bi2Se3 reverts to the original rhombohedral phase after considerable hysteresis. Symmetries, frequencies, and pressure coefficients of the Raman and infrared modes in the different phases are reported and discussed.This work was done under financial support from Spanish Ministry of Science and Innovation under Projects No. MAT2007-66129, No. MAT2010-21270-C04-03/04, and No. CSD-2007-00045 and from the Valencian government under Project No. Prometeo/2011-035. It is also supported by the Ministry of Education, Youth and Sports of the Czech Republic Project No. MSM 0021627501

Experimental and Theoretical Study of Bi2O2Se Under Compression

[EN] We report a joint experimental and theoretical study of the structural, vibrational, elastic, optical, and electronic properties of the layered high-mobility semiconductor Bi2O2Se at high pressure. A good agreement between experiments and ab initio calculations is observed for the equation of state, the pressure coefficients of the Raman-active modes and the bandgap of the material. In particular, a detailed description of the vibrational properties is provided. Unlike other Sillen-type compounds which undergo a tetragonal to collapsed tetragonal pressure-induced phase transition at relatively low pressures, Bi2O2Se shows a remarkable structural stability up to 30 GPa; however, our results indicate that this compound exhibits considerable electronic changes around 4 GPa, likely related to the progressive shortening and hardening of the long and weak Bi-Se bonds linking the Bi2O2 and Se atomic layers. Variations of the structural, vibrational, and electronic properties induced by these electronic changes are discussed.This work was supported by Brazilian Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq) under project 201050/2012-9, by Spanish MINECO projects MAT2015-71070-REDC, MAT2016-75586-C4-1/2/3-P and CTQ2015-65207-P and by the Grant Agency of the Czech Republic (GA CR) under project 16-07711S. Supercomputer time has been provided by the Red Espanola de Supercomputacion (RES) and the MALTA cluster. D.S.-P. and J.A.S. acknowledge the "Ramon y Cajal" fellowship program (RYC-2015-17482) and Spanish Mineco Projects (2014-15643 and 2017-83295-P). J.R.-F. acknowledge the "Juan de la Cierva" program (IJCI-2014-20513) for financial support.Pereira, A.; Santamaría Pérez, D.; Ruiz Fuertes, J.; Manjón, F.; Cuenca Gotor, VP.; Vilaplana Cerda, RI.; Gomis, O.... (2018). Experimental and Theoretical Study of Bi2O2Se Under Compression. The Journal of Physical Chemistry C. 122(16):8853-8867. https://doi.org/10.1021/acs.jpcc.8b02194S885388671221

High-pressure vibrational and optical study of Bi2Te3

We report an experimental and theoretical lattice dynamics study of bismuth telluride (Bi2Te3) up to 23 GPa together with an experimental and theoretical study of the optical absorption and reflection up to 10 GPa. The indirect bandgap of the low-pressure rhombohedral (R-3m) phase (α-Bi2Te3) was observed to decrease with pressure at a rate of −6 meV/GPa. In regard to lattice dynamics, Raman-active modes of α-Bi2Te3 were observed up to 7.4 GPa. The pressure dependence of their frequency and width provides evidence of the presence of an electronic-topological transition around 4.0 GPa. Above 7.4 GPa a phase transition is detected to the C2/m structure. On further increasing pressure two additional phase transitions, attributed to the C2/c and disordered bcc (Im-3m) phases, have been observed near 15.5 and 21.6 GPa in good agreement with the structures recently observed by means of x-ray diffraction at high pressures in Bi2Te3. After release of pressure the sample reverts back to the original rhombohedral phase after considerable hysteresis. Raman- and IR-mode symmetries, frequencies, and pressure coefficients in the different phases are reported and discussed.This work has been done under financial support from Spanish MICINN under projects MAT2008-06873-C02- 02, MAT2007-66129, Prometeo/2011-035, MAT2010-21270-C04-03/04, and CSD2007-00045 and supported by the Ministry of Education, Youth and Sports of the Czech Republic (MSM 0021627501)