Residual strain in free-standing CdTe nanowires overgrown with HgTe

We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires

Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells

HgTe/HgCdTe quantum wells with the inverted band structure have been probed using far infrared magneto-spectroscopy. Realistic calculations of Landau level diagrams have been performed to identify the observed transitions. Investigations have been greatly focused on the magnetic field dependence of the peculiar pair of "zero-mode" Landau levels which characteristically split from the upper conduction and bottom valence bands, and merge under the applied magnetic field. The observed avoided crossing of these levels is tentatively attributed to the bulk inversion asymmetry of zinc blend compounds.Comment: 5 pages, 4 figure

Temperature-driven transition from a semiconductor to a topological insulator

We report on a temperature-induced transition from a conventional semiconductor to a two-dimensional topological insulator investigated by means of magnetotransport experiments on HgTe/CdTe quantum well structures. At low temperatures, we are in the regime of the quantum spin Hall effect and observe an ambipolar quantized Hall resistance by tuning the Fermi energy through the bulk band gap. At room temperature, we find electron and hole conduction that can be described by a classical two-carrier model. Above the onset of quantized magnetotransport at low temperature, we observe a pronounced linear magnetoresistance that develops from a classical quadratic low-field magnetoresistance if electrons and holes coexist. Temperature-dependent bulk band structure calculations predict a transition from a conventional semiconductor to a topological insulator in the regime where the linear magnetoresistance occurs.Comment: 7 pages, 6 figure

Nonverbal behavior during standardized interviews in patients with schizophrenia spectrum disorders

Several studies have consistently shown that patients with schizophrenia or schizophrenia spectrum disorders (SSD) can be distinguished from normal controls on the basis of their nonverbal behavior during standardized interviews, with considerable interactions between negative symptoms and poor facial expressivity. However, most studies have examined unmedicated patients, and gender of both interviewer and interviewee has not been taken into account. In this study we assessed the nonverbal behavior of male and female patients with SSD who were receiving second-generation antipsychotic medication (SGA) using the Ethological Coding System for Interviews (Troisi, 1998). In addition, we used a novel 5-factor model of the Positive and Negative Symptom Scale (PANSS, van der Gaag et al., 2006) to correlate nonverbal behavior with standard psychopathology ratings. Our findings strongly resembled results of previous studies into nonverbal behavior of patients with SSD, despite differences in cultural backgrounds and gender of the interviewer. Negative symptoms were inversely correlated with several of the nonverbal behavioral dimensions. Medication dose did not correlate with any one of the behavioral or psychopathological measures. Patients with SSD make less use of their nonverbal behavioral repertoire compared with controls, independent of antipsychotic treatment. Culture-specific nonverbal expressivity seems to play an additional (minor) role in distinguishing patients from healthy controls

Magneto-optics of massive Dirac fermions in bulk Bi2Se3

We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds.Comment: 5 pages, 3 figures and Supplementary materials, to be published in Physical Review Letter

Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction

We study the electronic transport across an electrostatically-gated lateral junction in a HgTe quantum well, a canonical 2D topological insulator, with and without applied magnetic field. We control carrier density inside and outside a junction region independently and hence tune the number and nature of 1D edge modes propagating in each of those regions. Outside the 2D gap, magnetic field drives the system to the quantum Hall regime, and chiral states propagate at the edge. In this regime, we observe fractional plateaus which reflect the equilibration between 1D chiral modes across the junction. As carrier density approaches zero in the central region and at moderate fields, we observe oscillations in resistance that we attribute to Fabry-Perot interference in the helical states, enabled by the broken time reversal symmetry. At higher fields, those oscillations disappear, in agreement with the expected absence of helical states when band inversion is lifted.Comment: 5 pages, 4 figures, supp. ma

Ultrafast nonlocal collective dynamics of Kane plasmon-polaritons in a narrow-gap semiconductor

The observation of ultrarelativistic fermions in condensed-matter systems has uncovered a cornucopia of novel phenomenology as well as a potential for effective ultrafast light engineering of new states of matter. While the nonequilibrium properties of two- and three-dimensional (2D and 3D) hexagonal crystals have been studied extensively, our understanding of the photoinduced dynamics in 3D single-valley ultrarelativistic materials is, unexpectedly, lacking. Here, we use ultrafast scanning near-field optical spectroscopy to access and control nonequilibrium large-momentum plasmon-polaritons in thin films of a prototypical narrow-bandgap semiconductor Hg0.81Cd0.19Te. We demonstrate that these collective excitations exhibit distinctly nonclassical scaling with electron density characteristic of the ultrarelativistic Kane regime and experience ultrafast initial relaxation followed by a long-lived highly coherent state. Our observation and ultrafast control of Kane plasmon-polaritons in a semiconducting material using light sources in the standard telecommunications fiber-optics window open a new avenue toward high-bandwidth coherent information processing in next-generation plasmonic circuits