vaccination in a patient with Behcet's disease

Case report: A 25-year-old man with Behcet's disease was admitted because of weakness of the lower limbs and difficulty in urination. He had received a rabies vaccination 2 months previous because he had been bitten by a dog.Findings: Clinical and laboratory findings supported acute transverse myelitis. A hyperintense lesion and expansion at the level of conus medullaris was detected on spinal magnetic resonance imaging.Conclusion: Although neurologic involvement is one of the main causes of mortality and morbidity in Behcet's disease, the factors that aggravate the involvement of the nervous system are still unclear. Vaccination may have been the factor that had activated autoimmune mechanisms in this case. To our knowledge, involvement of the conus medullaris in Behcet's disease after rabies vaccination has not been reported

3-D model building for computer vision

technical reportThis paper presents a Computer-Aided Geometric Design (CAGD) based approach for building 3-D models which can be used for the recognition of 3-D objects for industrial machine vision applications. The objects are designed using the Alpha_1 CAGD system developed at the University of Utah. A new method is given which uses the CAGD design and allows the points on the surface of the object to be sampled at the desired resolution, thus allowing the construction of multiresolution 3-D models. The resulting data structure of points includes coordinates of the points in 3-D space, surface normals and information about the neighboring points

Response properties of III-V dilute magnetic semiconductors: interplay of disorder, dynamical electron-electron interactions and band-structure effects

A theory of the electronic response in spin and charge disordered media is developed with the particular aim to describe III-V dilute magnetic semiconductors like GaMnAs. The theory combines a detailed k.p description of the valence band, in which the itinerant carriers are assumed to reside, with first-principles calculations of disorder contributions using an equation-of-motion approach for the current response function. A fully dynamic treatment of electron-electron interaction is achieved by means of time-dependent density functional theory. It is found that collective excitations within the valence band significantly increase the carrier relaxation rate by providing effective channels for momentum relaxation. This modification of the relaxation rate, however, only has a minor impact on the infrared optical conductivity in GaMnAs, which is mostly determined by the details of the valence band structure and found to be in agreement with experiment.Comment: 15 pages, 9 figure

Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.Comment: 5 pages, 1 figur

Recognition of 2-D occluded objects and their manipulation by PUMA 560 robot

Journal ArticleA new method based on a cluster-structure paradigm is presented for the recognition of 2-D partially occluded objects. This method uses the line segments which comprise the boundary of an object in the recognition process. The length of each of these segments as well as the angle between successive segments comprise the only information needed by the program to find an object's position. The technique is applied in several steps which include segment clustering, finding all sequences in one pass over the data, and final clustering of sequences so as to obtain the desired rotational and translational information. The amount of computational effort decreases as the recognition algorithm progresses. As compared to earlier methods, which identify an object based on only one sequence of matched segments, the new technique allows the identification of all parts of the model which match with the apparent image. These parts need not be adjacent to each other. Also the method is able to tolerate a moderate change in scale and a significant amount of shape distortion arising as a result of segmentation or the polygonal approximation of the boundary of the object. The method has been evaluated with respect to a large number of examples where several objects partially occlude one another. A summary of the results is presented

Hole spin relaxation in semiconductor quantum dots

Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.Comment: 10 pages, 10 figure

Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system

We have investigated the spin dynamics of a high-mobility two-dimensional electron system (2DES) in a GaAs--Al$_{0.3}$Ga$_{0.7}$As single quantum well by time-resolved Faraday rotation (TRFR) in dependence on the initial degree of spin polarization, $P$, of the 2DES. From $P\sim 0$ to $P\sim 30$ %, we observe an increase of the spin dephasing time, $T_2^\ast$, by an order of magnitude, from about 20 ps to 200 ps, in good agreement with theoretical predictions by Weng and Wu [Phys. Rev. B {\bf 68}, 075312 (2003)]. Furthermore, by applying an external magnetic field in the Voigt configuration, also the electron $g$ factor is found to decrease for increasing $P$. Fully microscopic calculations, by numerically solving the kinetic spin Bloch equations considering the D'yakonov-Perel' and the Bir-Aronov-Pikus mechanisms, reproduce the most salient features of the experiments, {\em i.e}., a dramatic decrease of spin dephasing and a moderate decrease of the electron $g$ factor with increasing $P$. We show that both results are determined dominantly by the Hartree-Fock contribution of the Coulomb interaction.Comment: 4 pages, 4 figures, to be published in PR

Spin flip from dark to bright states in InP quantum dots

We report measurements of the time for spin flip from dark (non-light emitting) exciton states in quantum dots to bright (light emitting) exciton states in InP quantum dots. Dark excitons are created by two-photon excitation by an ultrafast laser. The time for spin flip between dark and bright states is found to be approximately 200 ps, independent of density and temperature below 70 K. This is much shorter than observed in other quantum dot systems. The rate of decay of the luminescence intensity, approximately 300 ps, is not simply equal to the radiative decay rate from the bright states, because the rate of decay is limited by the rate of conversion from dark excitons into bright excitons. The dependence of the luminescence decay time on the spin flip time is a general effect that applies to many experiments.Comment: 3 figure

Mixing of two-electron spin states in a semiconductor quantum dot

We show that the low lying spin states of two electrons in a semiconductor quantum dot can be strongly mixed by electron-electron asymmetric exchange. This mixing is generated by the coupling of electron spin to its orbital motion and to the relative orbital motion of the two electrons. The asymmetric exchange can be as large as 50% of the isotropic exchange, even for cylindrical quantum dots. The resulting spin mixing contributes to understanding spin dynamics in quantum dots, including light polarization reversal

Spin relaxation in nn-type ZnO quantum wells

We perform an investigation on the spin relaxation for $n$-type ZnO (0001) quantum wells by numerically solving the kinetic spin Bloch equations with all the relevant scattering explicitly included. We show the temperature and electron density dependence of the spin relaxation time under various conditions such as impurity density, well width, and external electric field. We find a peak in the temperature dependence of the spin relaxation time at low impurity density. This peak can survive even at 100 K, much higher than the prediction and measurement value in GaAs. There also exhibits a peak in the electron density dependence at low temperature. These two peaks originate from the nonmonotonic temperature and electron density dependence of the Coulomb scattering. The spin relaxation time can reach the order of nanosecond at low temperature and high impurity density.Comment: 6 pages, 4 figure