Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included

Semiconductor technology program. Progress briefs

Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described

Methods of measurement for semiconductor materials, process control, and devices Quarterly report, 1 Jul. - 30 Sep. 1970

NBS activities in developing methods of measurement for semiconductor materials, process control, and device

Methods of measurement for semiconductor materials, process control, and devices Quarterly report, 1 Oct. - 31 Dec. 1969

Methods of measurement for semiconductor material, process control, and device

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors

Standard measurements of the resistivity of silicon by the four probe method Final report, 3 Apr. - 30 Nov. 1967

Point measuring method for precise resistance analyses on silicon slice

Physical Electronics

Contains reports on two research projects

The study of the epitaxial parameters on reliability of silicon planar devices technical summary report, 25 jun. 1964 - 25 jun. 1965

Effect of varying epitaxial deposition parameters on reliability of silicon planar solid state device

Physical Electronics

Contains reports on three research projects

Physical Electronics

Contains reports on three research projects