Coulomb blockade in a Si channel gated by an Al single-electron transistor

We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si transistor, and vice versa. Analysis of these correlations using a simple electrostatic model demonstrates that the two single-electron transistor islands are closely aligned, with an inter-island capacitance approximately equal to 1/3 of the total capacitance of the Si transistor island, indicating that the Si transistor is strongly coupled to the Al transistor.Comment: 3 pages, 4 figures, 1 table; typos corrected, minor clarifications added; published in AP

Representation of South Asian people in randomised clinical trials: analysis of trials' data

Excluding patients of ethnic minority groups from clinical trials is unethical, introduces substantial bias, and means that findings are based on unrepresentative populations. The National Institutes of Health Revitalization Act 1993 requires that all minority groups be represented in the sample in research projects supported by the National Institutes of Health, unless there is a clear and compelling justification not to do so. In the United Kingdom no such legislation exists

A simple functional form for proton-208{}^{208}Pb total reaction cross sections

A simple functional form has been found that gives a good representation of the total reaction cross sections for the scattering from ${}^{208}$Pb of protons with energies in the range 30 to 300 MeV.Comment: 7 pages, 2 figure

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Ultra thin body (UTB) SOI MOSFETs are expected to replace conventional MOSFETs for integrated memory applications due to superior electrostatic integrity and better resistant to some of the sources of intrinsic parameter fluctuations. To fully realise the performance benefits of UTB SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact on 6T SRAM static noise margin characteristics of discrete random dopants in the source/drain regions and body-thickness variations has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of a 6T SRAM based on a conventional 35nm MOSFET is also presented

Setting Children Free: Children’s Independent Movement in the Local Environment

Parental concerns about children’s safety and security are restricting children’s independent exploration of the local environment. Children are being denied important opportunities to exercise, to acquire decision-making skills, such as crossing the road safely, and to develop social skills through interaction with their peers. This paper presents findings from the project CAPABLE (Children’s Activities, Perceptions And Behaviour in the Local Environment) being carried out at University College London. Based on findings from fieldwork carried out with children aged 8-11 in Cheshunt, Hertfordshire, the paper shows the effect of factors such as the number of adults at home, having an older sibling, having a car or garden at home and living near to a park on the propensity to be allowed out alone. Then it considers how being allowed out alone affects the amount of time children spend outdoors, playing with friends and watching television. The paper then uses data from children who have been fitted with physical activity monitors and GPS (Global Positioning Satellite) monitors and asked to keep diaries, to show how children’s travel behaviour differs when they are with adults from when they are not