103 research outputs found
Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer
Making a metal contact to the two-dimensional semiconductor MoS2 without
creating a Schottky barrier is a challenge. Using density functional
calculations we show that, although the Schottky barrier for electrons obeys
the Schottky-Mott rule for high work function ( eV) metals, the
Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for
low work function metals, due to the metal-MoS2 interaction. Inserting a boron
nitride (BN) monolayer between the metal and the MoS2 disrupts this
interaction, and restores the MoS2 electronic structure. Moreover, a BN layer
decreases the metal work function of Co and Ni by eV, and enables a
line-up of the Fermi level with the MoS2 conduction band. Surface modification
by adsorbing a single BN layer is a practical method to attain vanishing
Schottky barrier heights.Comment: 5 pages, 5 figure
Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study
Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation
of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing.
We study possible structures of the mixed surface and the nanowires by total
energy (density functional theory) calculations. Experimental scanning
tunneling microscopy images are compared to the calculated local densities of
states. On the basis of this comparison and the stability of the structures, we
conclude that the formation of nanowires is driven by an increased
concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic
nanowires consist of Ge instead of Pt atoms.Comment: 4 pages, 3 figure
Large potential steps at weakly interacting metal-insulator interfaces
Potential steps exceeding 1 eV are regularly formed at metal|insulator
interfaces, even when the interaction between the materials at the interface is
weak physisorption. From first-principles calculations on metal|h-BN interfaces
we show that these potential steps are only indirectly sensitive to the
interface bonding through the dependence of the binding energy curves on the
van der Waals interaction. Exchange repulsion forms the main contribution to
the interface potential step in the weakly interacting regime, which we show
with a simple model based upon a symmetrized product of metal and h-BN wave
functions. In the strongly interacting regime, the interface potential step is
reduced by chemical bonding
From spin-polarized interfaces to giant magnetoresistance in organic spin valves
We calculate the spin-polarized electronic transport through a molecular
bilayer spin valve from first principles, and establish the link between the
magnetoresistance and the spin-dependent inter- actions at the metal-molecule
interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a
high value of 70% in the linear response regime, but it drops sharply as a
function of the applied bias. The current polarization has a value of 80% in
linear response, and also decreases as a function of bias. Both these trends
can be modelled in terms of prominent spin-dependent Fe|C70 interface states
close to the Fermi level, unfolding the potential of spinterface science to
control and optimize spin currents.Comment: 13 pages, 5 figure
Electronic structure and correlations in pristine and potassium doped Cu-Phthalocyanine molecular crystals
We investigate the changes in the electronic structure of copper
phthalocyanine (CuPc) crystals that is caused by intercalation with potassium.
This is done by means of {\it ab initio} LSDA and LSDA+U calculations of the
electronic structure of these molecular crystals. Pristine CuPc is found to be
an insulator with local magnetic moments and a Pc-derived valence band with a
width of 0.32 eV. In the intercalated compound the additional
electrons that are introduced by potassium are fully transferred to the
states of the Pc-ring. A molecular low spin state results, preserving, however,
the local magnetic moment on the copper ions. The degeneracy of the
levels is split by a crystal field that quenches the orbital degeneracy and
gives rise to a band splitting of 110 meV. Molecular electronic Coulomb
interactions enhance this splitting in to a charge gap of 1.4 eV.
The bandwidth of the conduction band is 0.56 eV, which is surprisingly large
for a molecular solid. This is line with the experimentally observation that
the system with additional potassium doping, , is a metal
as the unusually large bandwidth combined with the substantial carrier
concentration acts against localization and polaron formation, while strongly
promoting the delocalization of the charge carriers.Comment: 5 pages, 7 figures embedde
1D metallic states at 2D transition metal dichalcogenide semiconductor heterojunctions
Two-dimensional (2D) lateral heterojunctions of transition metal
dichalcogenides (TMDCs) have become a reality in recent years. Semiconducting
TMDC layers in their common H -structure have a nonzero in-plane electric
polarization, which is a topological invariant. We show by means of
first-principles calculations that lateral 2D heterojunctions between TMDCs
with a different polarization generate one-dimensional (1D) metallic states at
the junction, even in cases where the different materials are joined
epitaxially. The metallicity does not depend upon structural details, and is
explained from the change in topological invariant at the junction.
Nevertheless, these 1D metals are susceptible to 1D instabilities, such as
charge- and spin-density waves, making 2D TMDC heterojunctions ideal systems
for studying 1D physics
Band gaps in incommensurable graphene on hexagonal boron nitride
Devising ways of opening a band gap in graphene to make charge-carrier masses
finite is essential for many applications. Recent experiments with graphene on
hexagonal boron nitride (h-BN) offer tantalizing hints that the weak
interaction with the substrate is sufficient to open a gap, in contradiction of
earlier findings. Using many-body perturbation theory, we find that the small
observed gap is what remains after a much larger underlying quasiparticle gap
is suppressed by incommensurability. The sensitivity of this suppression to a
small modulation of the distance separating graphene from the substrate
suggests ways of exposing the larger underlying gap
CO adsorption on Pt induced Ge nanowires
Using density functional theory, we investigate the possible adsorption sites
of CO molecules on the recently discovered Pt induced Ge nanowires on Ge(001).
Calculated STM images are compared to experimental STM images to identify the
experimentally observed adsorption sites. The CO molecules are found to adsorb
preferably onto the Pt atoms between the Ge nanowire dimer segments. This
adsorption site places the CO in between two nanowire dimers, pushing them
outward, blocking the nearest equivalent adsorption sites. This explains the
observed long-range repulsive interaction between CO molecules on these Pt
induced nanowires.Comment: 12 pages, 10 figure
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