Controlling the Schottky barrier at MoS2|metal contacts by inserting a BN monolayer

Making a metal contact to the two-dimensional semiconductor MoS2 without creating a Schottky barrier is a challenge. Using density functional calculations we show that, although the Schottky barrier for electrons obeys the Schottky-Mott rule for high work function ($\gtrsim 4.7$ eV) metals, the Fermi level is pinned at 0.1-0.3 eV below the conduction band edge of MoS2 for low work function metals, due to the metal-MoS2 interaction. Inserting a boron nitride (BN) monolayer between the metal and the MoS2 disrupts this interaction, and restores the MoS2 electronic structure. Moreover, a BN layer decreases the metal work function of Co and Ni by $\sim 2$ eV, and enables a line-up of the Fermi level with the MoS2 conduction band. Surface modification by adsorbing a single BN layer is a practical method to attain vanishing Schottky barrier heights.Comment: 5 pages, 5 figure

Formation of Pt induced Ge atomic nanowires on Pt/Ge(001): a DFT study

Pt deposited onto a Ge(001) surface gives rise to the spontaneous formation of atomic nanowires on a mixed Pt-Ge surface after high temperature annealing. We study possible structures of the mixed surface and the nanowires by total energy (density functional theory) calculations. Experimental scanning tunneling microscopy images are compared to the calculated local densities of states. On the basis of this comparison and the stability of the structures, we conclude that the formation of nanowires is driven by an increased concentration of Pt atoms in the Ge surface layers. Surprisingly, the atomic nanowires consist of Ge instead of Pt atoms.Comment: 4 pages, 3 figure

Large potential steps at weakly interacting metal-insulator interfaces

Potential steps exceeding 1 eV are regularly formed at metal|insulator interfaces, even when the interaction between the materials at the interface is weak physisorption. From first-principles calculations on metal|h-BN interfaces we show that these potential steps are only indirectly sensitive to the interface bonding through the dependence of the binding energy curves on the van der Waals interaction. Exchange repulsion forms the main contribution to the interface potential step in the weakly interacting regime, which we show with a simple model based upon a symmetrized product of metal and h-BN wave functions. In the strongly interacting regime, the interface potential step is reduced by chemical bonding

From spin-polarized interfaces to giant magnetoresistance in organic spin valves

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces. The magnetoresistance of a Fe|bilayer-C70|Fe spin valve attains a high value of 70% in the linear response regime, but it drops sharply as a function of the applied bias. The current polarization has a value of 80% in linear response, and also decreases as a function of bias. Both these trends can be modelled in terms of prominent spin-dependent Fe|C70 interface states close to the Fermi level, unfolding the potential of spinterface science to control and optimize spin currents.Comment: 13 pages, 5 figure

Band gaps in pseudopotential self-consistent GW calculations

For materials which are incorrectly predicted by density functional theory to be metallic, an iterative procedure must be adopted in order to perform GW calculations. In this paper we test two iterative schemes based on the quasi-particle and pseudopotential approximations for a number of inorganic semiconductors whose electronic structures are well known from experiment. Iterating just the quasi-particle energies yields a systematic, but modest overestimate of the band gaps, confirming conclusions drawn earlier for CaB_6 and YH_3. Iterating the quasi-particle wave functions as well gives rise to an imbalance between the Hartree and Fock potentials and results in bandgaps in far poorer agreement with experiment.Comment: 5 pages, 2 figures, 2 table

Electronic structure and correlations in pristine and potassium doped Cu-Phthalocyanine molecular crystals

We investigate the changes in the electronic structure of copper phthalocyanine (CuPc) crystals that is caused by intercalation with potassium. This is done by means of {\it ab initio} LSDA and LSDA+U calculations of the electronic structure of these molecular crystals. Pristine CuPc is found to be an insulator with local magnetic moments and a Pc-derived valence band with a width of 0.32 eV. In the intercalated compound $\rm K_2CuPc$ the additional electrons that are introduced by potassium are fully transferred to the $e_g$ states of the Pc-ring. A molecular low spin state results, preserving, however, the local magnetic moment on the copper ions. The degeneracy of the $e_g$ levels is split by a crystal field that quenches the orbital degeneracy and gives rise to a band splitting of 110 meV. Molecular electronic Coulomb interactions enhance this splitting in $\rm K_2CuPc$ to a charge gap of 1.4 eV. The bandwidth of the conduction band is 0.56 eV, which is surprisingly large for a molecular solid. This is line with the experimentally observation that the system with additional potassium doping, $\rm K_{2.75}{CuPc}$, is a metal as the unusually large bandwidth combined with the substantial carrier concentration acts against localization and polaron formation, while strongly promoting the delocalization of the charge carriers.Comment: 5 pages, 7 figures embedde

Band gaps in incommensurable graphene on hexagonal boron nitride

Devising ways of opening a band gap in graphene to make charge-carrier masses finite is essential for many applications. Recent experiments with graphene on hexagonal boron nitride (h-BN) offer tantalizing hints that the weak interaction with the substrate is sufficient to open a gap, in contradiction of earlier findings. Using many-body perturbation theory, we find that the small observed gap is what remains after a much larger underlying quasiparticle gap is suppressed by incommensurability. The sensitivity of this suppression to a small modulation of the distance separating graphene from the substrate suggests ways of exposing the larger underlying gap

Ab initio study on the effects of transition metal doping of Mg2NiH4

Mg2NiH4 is a promising hydrogen storage material with fast (de)hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal doping by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by ~0.1 eV/H2 if one in eight Ni atoms is replaced by Cu or Fe. Replacing Ni by Co atoms, however, increases the hydrogen desorption enthalpy. We study the thermodynamic stability of the dopants in the hydrogenated and dehydrogenated phases. Doping with Co or Cu leads to marginally stable compounds, whereas doping with Fe leads to an unstable compound. The optical response of Mg2NiH4 is also substantially affected by doping. The optical gap in Mg2NiH4 is ~1.7 eV. Doping with Co, Fe or Cu leads to impurity bands that reduce the optical gap by up to 0.5 eV.Comment: 8 pages, 4 figure