Comparison between classical potentials and ab initio for silicon under large shear

The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of both shuffle and glide set planes. Similar calculations have been done with three empirical potentials, Stillinger-Weber, Tersoff and EDIP, in order to find the one giving the best results under large shear strains. The generalized stacking fault energies have also been calculated with these potentials to complement this study. It turns out that the Stillinger-Weber potential better reproduces the ab initio results, for the smoothness and the amplitude of the energy variation as well as the localization of shear in the shuffle set

Dislocation formation from a surface step in semiconductors: an ab initio study

The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations. Our results indicate that the step is the privileged site for initiating plasticity, with the formation and glide of 60$^\circ$ dislocations for both tensile and compressive deformations. We have also examined the effect of surface and step termination on the plastic mechanisms

Numerical simulations of twin formation and extension in thin face-centred cubic metallic films

The basic mechanisms of plasticity in face-centred cubic materials are now well known in bulk materials. However, several experimental studies have shown that at the nanoscale, some of its mechanisms can induce surprising mechanical properties when compared to bulk behaviour. The formation and extension of twins in metallic nanowire can, for example, generate super-plasticity [1] or the presence of growth nano-twins within a material can lead to strengthening effects [2]. Atomic simulations are particularly adapted for studying the plasticity mechanisms at play, since they allow their visualization at the atomic scale. While many atomistic simulations studies have been focused on the interaction of dislocation with a twin boundary, our study differs in the choice of crystallographic orientations, specifically designed to facilitate twin formation. In that context, we analyse, in a thin face-centred cubic metallic film, the competition between free surfaces and twin boundaries for twin nucleation under applied stress, as well as the influence of a pre-existing twin boundary on the newly nucleated twin propagation. The chosen orientation also allows the introduction of surface defects, namely monoatomic surface steps, which can act as dislocation sources under mechanical stress. Our study highlights the influence of these surface defects on plasticity, by the comparison of systems with and without surface defects. In particular, the presence of a surface step on the surface localizes the plasticity, which gives rise to specific reactions in the presence of a pre-existing twin boundary, causing the formation of a Lomer dislocation, and subsequently the formation of a Lomer-Cottrell lock. When no defect is present at the surface, we observed the nucleation of several nano-twins, generating a partial reorientation of the film and the partial suppression of the original twin boundary

Étude par simulations à l'échelle atomique de la déformation de nanofils de silicium

L'étude des nano-objets en matériau semi-conducteur a révélé des propriétés mécaniques exceptionnelles, différentes de celles observées dans le massif. Outre l'intérêt technologique majeur qu'ils représentent à travers la miniaturisation toujours plus poussée des systèmes électroniques, leurs caractéristiques intrinsèques en font des objets particulièrement bien adaptés pour des études fondamentales. Dans ce contexte, nous avons étudié le déclenchement de la plasticité dans les nano-fils de silicium, les premiers stades de la plasticité étant en effet déterminants pour l'évolution ultérieure du système. Le silicium est ici considéré comme un semi-conducteur modèle. Pour cette étude, nous avons utilisé des simulations atomistiques qui sont parfaitement appropriées à l'analyse détaillée de la structure atomique des nano-objets. Après avoir contextualisé notre étude tant du point de vue de l'expérience que de celui des simulations, nous présentons les techniques numériques que nous avons utilisées. Nous décrivons ensuite l'étude de la déformation de nano-fils monocristallins, révélant notamment le rôle majeur des surfaces et l'activation d'un système de glissement jamais observé dans le silicium massif. Ce système de glissement est analysé en détail, et son activation est expliquée notamment au moyen de calculs ab initio. Enfin, nous avons considéré la déformation de nano-fils coeur-coquille cristal-amorphe et mis en évidence un comportement différent de celui observé pour les nano-fils monocristallins. Ainsi, des défauts natifs à l'interface cristal-amorphe semblent agir comme des germes favorisant la nucléation de la première dislocation qui va initier la plasticité.The study of semiconductor nano-objets has revealed amazing mechanical properties, different from what is commonly observed in bulk. Besides the technological interest of these objects, due to the ever more pronounced miniaturization of electronic devices, their intrinsic specificities make them particularly well suited for fundamental studies. During this thesis, we have thus studied the onset of plasticity in silicon nanowires, the first stages of plasticity being indeed deciding for the subsequent evolution of the system. Silicon is here considered as a model semiconductor. For that study, we have used atomistic simulations, which are well appropriate for the detailed analysis of the nano-objects atomic structure. We first recall the context of that study, both from the experiments and simulations points of view. We then present the numerical methods used. Thestudy of the deformation of monocrystalline nanowires is then described; it reveals in particular the deciding role of surfaces, and the activation of one slip system never observed in bulk silicon. This slip system is analyzed in details, and its activation is explained notably thanks to ab initio calculations. Finally, crystalline-amorphous core-shell silicon nanowires are considered; and shownto exhibit a different behavior from that of monocrystalline nanowires. Indeed, native defects at the crystalline/amorphous interface seem to act as seeds, favoring the nucleation of the first dislocation which gives rise to the plasticity.POITIERS-SCD-Bib. électronique (861949901) / SudocSudocFranceF

Toward the understanding of the brittle to ductile transition at low size in silicon: Experiments and simulations

While bulk silicon is brittle at temperatures below 600-700K, the compression of nanopillars has shown that a decrease of the diameter below few hundreds of nanometers could change the silicon behavior from brittle to ductile [1,2]. This size effect cannot be explained by the initial defect density like in metals, because pristine silicon nano-objects do not contain residual defects. In these conditions the cracks and/or the dislocations nucleation should take origin at the surface. The identification of the parameters governing the brittle to ductile transition in size and the understanding of the mechanisms are the key points to further develop the MEMS and NEMS technology or to prevent the failure of microelectronic components based on the silicon strained technology. Nowadays the respective improvements in simulations and experiments allow to investigate the mechanical properties of objects of similar sizes, close to hundreds of nanometers. We have then used both approaches - experiments and simulations – to understand the mechanisms at the origin of cracks and dislocations nucleation in such nanopillars. Experimentally,nanopillars with diameters of 100 nm and heights of 300 nm are obtained by lithography. They are deformed in compression by a flat punch nano-indentor under controlled-displacement mode at room temperature, and analyzed by scanning electron microscopy and high resolution transmission electron microscopy. In simulation, nanopillars up to 44 nm in diameter and height are investigated under compression and tension in controlled-displacement too, with a temperature ranging from 1 to 600K. The atomic interactions in silicon are modeled by two different semi-empirical potentials, Stillinger Weber and a Modified Embedded-Atom-Method (MEAM), both fitted to better reproduce the ductile and brittle properties of bulk silicon. Under compressive load (Fig. 1), both approaches reveal a ductile behavior with similar stress-strain curves, and large shear bands of amorphous silicon along the slip plane. In addition the simulations enlighten the formation of stacking fault plane in the anti-twining shear stress direction at the onset of plasticity, not yet confirmed by experiments (work in progress). The simulations under tensile load (Fig. 2) show the nucleation of perfect dislocations from the surface that can lead to cavity opening when they interact [3]. We observe first that the height of the nanopillars must be higher than 20 nm to allow the cavity opening, and second that the brittle to ductile transition is controlled by the diameter of the nanopillars, as observed experimentally in compression. The deformation of pillars with large diameters operates by cavity expansion leading to the brittle fracture, while pillars with smaller diameters are deformed by dislocations gliding leading to ductile fracture. Finally, the simulations in temperature seem to corroborate the fact that the size of the brittle to ductile transition could increase with temperature, as presumed experimentally [2]

Sleep continuity: a new metric to quantify disrupted hypnograms in non-sedated intensive care unit patients

Introduction: Sleep in intensive care unit (ICU) patients is severely altered. In a large proportion of critically ill patients, conventional sleep electroencephalogram (EEG) patterns are replaced by atypical sleep. On the other hand, some non-sedated patients can display usual sleep EEG patterns. In the latter, sleep is highly fragmented and disrupted and conventional rules may not be optimal. We sought to determine whether sleep continuity could be a useful metric to quantify the amount of sleep with recuperative function in critically ill patients with usual sleep EEG features. Methods: We retrospectively reanalyzed polysomnographies recorded in non-sedated critically ill patients requiring non-invasive ventilation (NIV) for acute hypercapnic respiratory failure. Using conventional rules, we built two-state hypnograms (sleep and wake) and identified all sleep episodes. The percentage of time spent in sleep bouts (10 and 30 minutes) was used to describe sleep continuity. In a first study, we compared these measures regarding good (NIV success) or poor outcome (NIV failure). In a second study performed on a different patient group, we compared these measurements during NIV and during spontaneous breathing. Results: While fragmentation indices were similar in the two groups, the percentage of total sleep time spent in short naps was higher and the percentage of sleep time spent in sleep bouts was lower in patients with successful NIV. The percentage of total sleep time spent in long naps was higher and the percentage of sleep time spent in sleep bouts was lower during NIV than during spontaneous breathing; the level of reproducibility of sleep continuity measures between scorers was high. Conclusions: Sleep continuity measurements could constitute a clinically relevant and reproducible assessment of sleep disruption in non-sedated ICU patients with usual sleep EEG

Glissile dislocations with transient cores in silicon

We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile configuration, previously obtained by nucleation from surfaces, surprinsingly corresponds to an unstable core. As a result, the 60$^\circ$ dislocation motion is solely driven by stress, with no thermal activation. We predict that this original feature could be relevant in situations for which large stresses occur, such as mechanical deformation at room temperature. Our work also suggests that post-mortem observations of stable dislocations could be misleading, and that mobile unstable dislocation cores should be taken into account in theoretical investigations

Hyperoxemia and excess oxygen use in early acute respiratory distress syndrome : Insights from the LUNG SAFE study

Publisher Copyright: © 2020 The Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.Background: Concerns exist regarding the prevalence and impact of unnecessary oxygen use in patients with acute respiratory distress syndrome (ARDS). We examined this issue in patients with ARDS enrolled in the Large observational study to UNderstand the Global impact of Severe Acute respiratory FailurE (LUNG SAFE) study. Methods: In this secondary analysis of the LUNG SAFE study, we wished to determine the prevalence and the outcomes associated with hyperoxemia on day 1, sustained hyperoxemia, and excessive oxygen use in patients with early ARDS. Patients who fulfilled criteria of ARDS on day 1 and day 2 of acute hypoxemic respiratory failure were categorized based on the presence of hyperoxemia (PaO2 > 100 mmHg) on day 1, sustained (i.e., present on day 1 and day 2) hyperoxemia, or excessive oxygen use (FIO2 ≥ 0.60 during hyperoxemia). Results: Of 2005 patients that met the inclusion criteria, 131 (6.5%) were hypoxemic (PaO2 < 55 mmHg), 607 (30%) had hyperoxemia on day 1, and 250 (12%) had sustained hyperoxemia. Excess FIO2 use occurred in 400 (66%) out of 607 patients with hyperoxemia. Excess FIO2 use decreased from day 1 to day 2 of ARDS, with most hyperoxemic patients on day 2 receiving relatively low FIO2. Multivariate analyses found no independent relationship between day 1 hyperoxemia, sustained hyperoxemia, or excess FIO2 use and adverse clinical outcomes. Mortality was 42% in patients with excess FIO2 use, compared to 39% in a propensity-matched sample of normoxemic (PaO2 55-100 mmHg) patients (P = 0.47). Conclusions: Hyperoxemia and excess oxygen use are both prevalent in early ARDS but are most often non-sustained. No relationship was found between hyperoxemia or excessive oxygen use and patient outcome in this cohort. Trial registration: LUNG-SAFE is registered with ClinicalTrials.gov, NCT02010073publishersversionPeer reviewe

Etude par simulations à l' échelle atomique de la formation de boucles de dislocation à partir d' irrégularités de surface d' un métal contraint

Dans ce travail de thèse, nous avons étudié la nucléation de dislocations depuis la surface d'un métal cfc sous contrainte, par le biais de simulations à l'échelles atomiques et de modèles basés sur la théorie élastique des dislocations. La nucléation depuis les surfaces, qui initie la plasticité dans les matériaux à l'échelle nanométrique, implique le franchissement d'une barrière d'énergie ; celui-ci se fait par activation thermique. Nous avons pu déterminer le rôle de différents facteurs, comme la température ou l'état de surface, sur l'évènement de nucléation. Plusieurs méthodes atomistiques ont été employées de concert pour déterminer les paramètres d'activation associés à la barrière d'énergie : le rayon critique que la dislocation doit atteindre pour devenir stable et se propager, l'énergie et le volume d'activation. Enfin, des éléments sur la cinétique des dislocations et sur les évènements plastiques subséquents à la nucléation ont pu être obtenus.In this PhD thesis, we studied the nucleation of dislocations from a surface in a fcc metal under stress, using atomic-scale simulations as well as models based on elastic theory of dislocations. Nucleation from surfaces, which initiate plasticity in nanometer-scale materials, requires the crossing of an energy barrier; this is possible through thermal activation. We were able to determine the role of different factors, such as temperature or the surface condition, on the nucleation event. Several atomistic methods were used to determine the activation parameters associated with the energy barrier: the critical radius the dislocations has to overcome in order to become stable and propagate, and the activation energy and volume. Finally, some information concerning dislocations dynamics and plastic phenomena subsequent to the nucleation process were obtained.POITIERS-BU Sciences (861942102) / SudocSudocFranceF