Geodesy and metrology with a transportable optical clock

partially_open24openGrotti, Jacopo; Koller, Silvio; Vogt, Stefan; Häfner, Sebastian; Sterr, Uwe; Lisdat, Christian; Denker, Heiner; Voigt, Christian; Timmen, Ludger; Rolland, Antoine; Baynes, Fred N.; Margolis, Helen S.; Zampaolo, Michel; Thoumany, Pierre; Pizzocaro, Marco; Rauf, Benjamin; Bregolin, Filippo; Tampellini, Anna; Barbieri, Piero; Zucco, Massimo; Costanzo, Giovanni A.; Clivati, Cecilia; Levi, Filippo; Calonico, DavideGrotti, Jacopo; Koller, Silvio; Vogt, Stefan; Häfner, Sebastian; Sterr, Uwe; Lisdat, Christian; Denker, Heiner; Voigt, Christian; Timmen, Ludger; Rolland, Antoine; Baynes, Fred N.; Margolis, Helen S.; Zampaolo, Michel; Thoumany, Pierre; Pizzocaro, Marco; Rauf, Benjamin; Bregolin, Filippo; Tampellini, Anna; Barbieri, Piero; Zucco, Massimo; Costanzo, Giovanni A.; Clivati, Cecilia; Levi, Filippo; Calonico, David

Diffusion study of 15N implanted into α-Ti using the nuclear resonance technique

The diffusion of  15 N in a-Ti was studied in the 673-1023 K temperature range by using ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow an Arrhenius behaviour D(T) = D0 exp (-Q/RT) where D0 = (1.1 ± 0.8) x 10-7 m2 s-1 and Q = (183 ± 2) kJ/mol. A comparison with previous results  is also given.Fil: Bregolin, F. L.. Universidade Federal do Rio Grande do Sul; BrasilFil: Behar, M.. Universidade Federal do Rio Grande do Sul; BrasilFil: Dyment, Fanny. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Electroluminescence induced by Ge nanocrystals obtained by hot ion implantation into SiO2

Commonly, electroluminescence (EL) from Ge nanocrystals (Ge NCs) has been obtained by room temperature (RT) Ge implantation into a SiO2 matrix followed by a high temperature anneal. In the present work, we have used a novel experimental approach: we have performed the Ge implantation at high temperature (Ti) and subsequently a high temperature anneal at 900 °C in order to grow the Ge NCs. By performing the implantation at Ti=350 °C, the electrical stability of the MOSLEDs were enhanced, as compared to the ones obtained from RT implantation. Moreover, by changing the implantation fluence from Φ=0.5x1016 and 1.0x1016 Ge/cm² we have observed a blueshift in the EL emission peak. The results show that the electrical stability of the hot implanted devices is higher than the ones obtained by RT implantation

Diffusion study of nitrogen implanted into α-Hf using the nuclear resonance technique

The diffusion of nitrogen in a-Hf was studied in the temperature range of (823-1123)K using the ion implantation and nuclear resonance techniques. The measurements show that the diffusion coefficients follow an Arrhenius behaviour D (T) = D0 exp (-Q / RT) with D0 = (5.5 ± 2.0) ×10-7 m2s-1 and Q = (228 ±1) kJ/mol. A comparison of the present results with the previous one is made. The difference between them can be attributed to the different purity of the samples used in each experiment.Fil: Bregolin, F. L.. Universidade Federal do Rio Grande do Sul; BrasilFil: Behar, Andrea Marcela. Universidade Federal do Rio Grande do Sul; BrasilFil: Dyment, Fanny. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Improved set-up for the ytterbium optical clock at INRIM

We present an upgraded setup for cooling and trapping of ytterbium atoms in a optical clock experiment. The experiment aims to cool and trap ytterbium atoms in a two stage magneto-optical trap (MOT) (at 399nm and 556nm for the first and second stage, respectively) and to probe the narrow-line clock transition at 578 nm in an optical lattice at the magic wavelength (759 nm). We describe here the generation of all the laser sources and the design of a new physic package, including the vacuum chamber and the atomic source

Improved Set-Up for the Ytterbium Optical Clock at INRIM

We present an upgraded setup for cooling and trapping of ytterbium atoms in a optical clock experiment. The experiment aims to cool and trap ytterbium atoms in a two stage magneto-optical trap (MOT) (at 399 nm and 556 nm for the first and second stage, respectively) and to probe the narrow-line clock transition at 578 nm in an optical lattice at the magic wavelength (759 nm). We describe here the generation of all the laser sources and the design of a new physic package, including the vacuum chamber and the atomic sourc

External RBS/PIXE analysis for evaluating quantum dots internalization into HeLa cells.

We have developed an external RBS/PIXE setup at University of Gottingen. By using this setup, the analysis can be performed in atmospheric condition, which leads to realizing a quantitative analysis for volatile samples with depth information. We applied this technique for HeLa cells, internalized CdSe quantum dots (Q-dot). External RBS shows the depth difference of Q-dot depth distribution in cells, w or w/o the treatment with an endocytosis inhibitor, which agrees well with the result of confocal microscopy. The quantity of Q-dot is also evaluated by external PIXE, which coincides with the result of RBS and fluorescence measurement. In addition, the application of Si3N4 film as a medium for HeLa cells is presented