5,499 research outputs found

    Sinc-Galerkin estimation of diffusivity in parabolic problems

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    A fully Sinc-Galerkin method for the numerical recovery of spatially varying diffusion coefficients in linear partial differential equations is presented. Because the parameter recovery problems are inherently ill-posed, an output error criterion in conjunction with Tikhonov regularization is used to formulate them as infinite-dimensional minimization problems. The forward problems are discretized with a sinc basis in both the spatial and temporal domains thus yielding an approximate solution which displays an exponential convergence rate and is valid on the infinite time interval. The minimization problems are then solved via a quasi-Newton/trust region algorithm. The L-curve technique for determining an approximate value of the regularization parameter is briefly discussed, and numerical examples are given which show the applicability of the method both for problems with noise-free data as well as for those whose data contains white noise

    Numerical recovery of material parameters in Euler-Bernoulli beam models

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    A fully Sinc-Galerkin method for recovering the spatially varying stiffness parameter in fourth-order time-dependence problems with fixed and cantilever boundary conditions is presented. The forward problems are discretized with a sinc basis in both the spatial and temporal domains. This yields an approximation solution which converges exponentially and is valid on the infinite time interval. When the forward methods are applied to parameter recovery problems, the resulting inverse problems are ill-posed. Tikhonov regularization is applied and the resulting minimization problems are solved via a quasi-Newton/trust region algorithm. The L-curve method is used to determine an appropriate value of the regularization parameter. Numerical results which highlight the method are given for problems with both fixed and cantilever boundary conditions

    Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

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    Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.Comment: 22 pages, 6 figures, submitted to JA

    A fully Galerkin method for the recovery of stiffness and damping parameters in Euler-Bernoulli beam models

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    A fully Sinc-Galerkin method for recovering the spatially varying stiffness and damping parameters in Euler-Bernoulli beam models is presented. The forward problems are discretized with a sinc basis in both the spatial and temporal domains thus yielding an approximate solution which converges exponentially and is valid on the infinite time interval. Hence the method avoids the time-stepping which is characteristic of many of the forward schemes which are used in parameter recovery algorithms. Tikhonov regularization is used to stabilize the resulting inverse problem, and the L-curve method for determining an appropriate value of the regularization parameter is briefly discussed. Numerical examples are given which demonstrate the applicability of the method for both individual and simultaneous recovery of the material parameters
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