Segregation during directional melting and its implications on seeded crystal growth: A theoretical analysis

Directional melting of binary systems, as encountered during seeding in melt growth, is analyzed for concurrent compositional changes at the crystal-melt interface. It is shown that steady state conditions cannot normally be reached during seeding and that the growth interface temperature at the initial stages of seeded growth is a function of backmelt conditions. The theoretical treatment is numerically applied to Hg1-xCdXTe and Ga-doped Ge

Neutron-Diffraction Measurements of an Antiferromagnetic Semiconducting Phase in the Vicinity of the High-Temperature Superconducting State of Kx_xFe2−y_{2-y}Se2_2

The recently discovered K-Fe-Se high temperature superconductor has caused heated debate regarding the nature of its parent compound. Transport, angle-resolved photoemission spectroscopy, and STM measurements have suggested that its parent compound could be insulating, semiconducting or even metallic [M. H. Fang, H.-D. Wang, C.-H. Dong, Z.-J. Li, C.-M. Feng, J. Chen, and H. Q. Yuan, Europhys. Lett. 94, 27009 (2011); F. Chen et al. Phys. Rev. X 1, 021020 (2011); and W. Li et al.,Phys. Rev. Lett. 109, 057003 (2012)]. Because the magnetic ground states associated with these different phases have not yet been identified and the relationship between magnetism and superconductivity is not fully understood, the real parent compound of this system remains elusive. Here, we report neutron-diffraction experiments that reveal a semiconducting antiferromagnetic (AFM) phase with rhombus iron vacancy order. The magnetic order of the semiconducting phase is the same as the stripe AFM order of the iron pnictide parent compounds. Moreover, while the root5*root5 block AFM phase coexists with superconductivity, the stripe AFM order is suppressed by it. This leads us to conjecture that the new semiconducting magnetic ordered phase is the true parent phase of this superconductor.Comment: 1 table, 4 figures,5 page

Two spatially separated phases in semiconducting Rb0.8_{0.8}Fe1.5_{1.5}S2_2

We report neutron scattering and transport measurements on semiconducting Rb$_{0.8}$Fe$_{1.5}$S$_2$, a compound isostructural and isoelectronic to the well-studied $A_{0.8}$Fe$_{y}$Se$_2 (A=$ K, Rb, Cs, Tl/K) superconducting systems. Both resistivity and DC susceptibility measurements reveal a magnetic phase transition at $T=275$ K. Neutron diffraction studies show that the 275 K transition originates from a phase with rhombic iron vacancy order which exhibits an in-plane stripe antiferromagnetic ordering below 275 K. In addition, interdigitated mesoscopically with the rhombic phase is an ubiquitous phase with $\sqrt{5}\times\sqrt{5}$ iron vacancy order. This phase has a magnetic transition at $T_N=425$ K and an iron vacancy order-disorder transition at $T_{S}=600$ K. These two different structural phases are closely similar to those observed in the isomorphous Se materials. Based on the close similarities of the in-plane antiferromagnetic structures, moments sizes, and ordering temperatures in semiconducting Rb$_{0.8}$Fe$_{1.5}$S$_2$ and K$_{0.81}$Fe$_{1.58}$Se$_2$, we argue that the in-plane antiferromagnetic order arises from strong coupling between local moments. Superconductivity, previously observed in the $A_{0.8}$Fe$_{y}$Se$_{2-z}$S$_z$ system, is absent in Rb$_{0.8}$Fe$_{1.5}$S$_2$, which has a semiconducting ground state. The implied relationship between stripe/block antiferromagnetism and superconductivity in these materials as well as a strategy for further investigation is discussed in this paper.Comment: 7 pages, 5 figure

Universal magnetic and structural behaviors in the iron arsenides

Commonalities among the order parameters of the ubiquitous antiferromagnetism present in the parent compounds of the iron arsenide high temperature superconductors are explored. Additionally, comparison is made between the well established two-dimensional Heisenberg-Ising magnet, K$_2$NiF$_4$ and iron arsenide systems residing at a critical point whose structural and magnetic phase transitions coincide. In particular, analysis is presented regarding two distinct classes of phase transition behavior reflected in the development of antiferromagnetic and structural order in the three main classes of iron arsenide superconductors. Two distinct universality classes are mirrored in their magnetic phase transitions which empirically are determined by the proximity of the coupled structural and magnetic phase transitions in these materials.Comment: 6 pages, 4 figure

A Variable Active Site Residue Influences the Kinetics of Response Regulator Phosphorylation and Dephosphorylation

Two-component regulatory systems, minimally composed of a sensor kinase and a response regulator protein, are common mediators of signal transduction in microorganisms. All response regulators contain a receiver domain with conserved active site residues that catalyze the signal activating and deactivating phosphorylation and dephosphorylation reactions. We explored the impact of variable active site position T+1 (one residue C-terminal to the conserved Thr/Ser) on reaction kinetics and signaling fidelity, using wild type and mutant Escherichia coli CheY, CheB, and NarL to represent the three major sequence classes observed across response regulators: Ala/Gly, Ser/Thr, and Val/Ile/Met, respectively, at T+1. Biochemical and structural data together suggested that different amino acids at T+1 impacted reaction kinetics by altering access to the active site while not perturbing overall protein structure. A given amino acid at position T+1 had similar effects on autodephosphorylation in each protein backgroun..

Cryogenic scintillation properties of n-type GaAs for the direct detection of MeV/c2 dark matter

This paper is the first report of n-type GaAs as a cryogenic scintillation radiation detector for the detection of electron recoils from interacting dark matter (DM) particles in the poorly explored MeV/c2 mass range. Seven GaAs samples from two commercial suppliers and with different silicon and boron concentrations were studied for their low temperature optical and scintillation properties. All samples are n-type even at low temperatures and exhibit emission between silicon donors and boron acceptors that peaks at 1.33 eV (930 nm). The lowest excitation band peaks at 1.44 eV (860 nm), and the overlap between the emission and excitation bands is small. The X-ray excited luminosities range from 7 to 43 photons/keV. Thermally stimulated luminescence measurements show that n-type GaAs does not accumulate metastable radiative states that could cause afterglow. Further development and use with cryogenic photodetectors promises a remarkable combination of large target size, ultra-low backgrounds, and a sensitivity to electron recoils of a few eV that would be produced by DM particles as light as a few MeV/c2

Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO3_3

Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality