Spin ladder compound Pb(0.55)Cd(0.45)V(2)O(5): synthesis and investigation

The complex oxide Pb(0.55)Cd(0.45)V(2)O(5) was synthesized and investigated by means of X-ray powder diffraction, electron diffraction, magnetic susceptibility measurements and band structure calculations. Its structure is similar to that of MV(2)O(5) compounds (M = Na, Ca) giving rise to a spin system of coupled S=1/2 two-leg ladders. Magnetic susceptibility measurements reveal a spin gap-like behavior with \Delta ~ 270 K and a spin singlet ground state. Band structure calculations suggest Pb(0.55)Cd(0.45)V(2)O(5) to be a system of weakly coupled dimers in perfect agreement with the experimental data. Pb(0.55)Cd(0.45)V(2)O(5) provides an example of the modification of the spin system in layered vanadium oxides by cation substitution. Simple correlations between the cation size, geometrical parameters and exchange integrals for the MV(2)O(5)-type oxides are established and discussed.Comment: 8 pages, 7 figure

Structure of heavy-metal sorbed birnessite. Part 2: Results from electron diffraction

International audienceSelected-area electron diffraction (SAED) and energy dispersive analysis were used to study the structure of synthetic heavy-metal sorbed birnessites (MeBi). Samples were prepared by equilibrating a suspension of Na-rich buserite (NaBu) at pH4 in the presence of various heavy metal cations (Me), including Pb, Cd, Zn, and Cu. Five main types of SAED patterns were observed. Types I and II were observed only for ZnBi micro-crystals, and they both consist of two super-cell reflection networks related by a mirror plane parallel to the a *c* plane. In direct space, these twinned networks correspond to the hexagonal supercells with AH = BH = 7b/ 3, and AH = BH = 7b, for ZnBi type I and II, respectively. In the two varieties, the supercells result from an ordered distribution of vacant layer octahedra capped by interlayer Zn in ZnBi layers. This distribution is described by a hexagonal cell with AH = 7b. In ZnBi micro-crystals of type I, interstratified twinned right- and left-handed fragments are similar to chalcophanite (ZnMn3O7-3H2O - Wadsley 1955; Post and Appleman 1988), and distributions of vacant layer octahedra from adjacent layers are regularly shifted with respect to each other by 1/3 of the long diagonal of the hexagonal layer unit cell. In ZnBi micro-crystals of type II, distributions of vacant layer octahedra are not regularly shifted from one layer to the adjacent one. SAED patterns of types III and IV occur for PbBi, ZnBi, and CdBi micro-crystals and contain super-cell reflections distributed parallel to [100] * with a periodicity which is not commensurate with that of the MeBi sub-structure (a */2.15 and a*/5.25, respectively). The super-cell reflections result from the ordered distribution within MeBi layers of vacant layer sites capped by Me as pairs along the a axis. Within each pair, vacant sites are separated by 2a for type III, and by 5a for type IV. In one-layer monoclinic structures, the apparent incommensurability arises from the +a/3 shift between adjacent layers having a similar one-dimensional periodic distribution of interlayer Me located above and below vacant octahedra sharing three corners with Mnlayer octahedra (TC sites). Tetrahedral coordination of these Me cations in TC sites, as in ZnBi, leads to the formation of strong H-bonds between adjacent layers. A similar incommensurate effect occurs in one layer hexagonal MeBi if octahedrally coordinated Me cations periodically distributed along the a axis are located above and/or below empty tridentate cavities sharing three edges with Mnlayer octahedra ( VITE sites, PbBi). SAED patterns of type V contain only sub-cell reflections and were observed mostly for PbBi and CuBi micro-crystals. Three different conditions can lead to the absence of supercell reflections: (1) a low amount of sorbed Me (PbBi); (2) the presence of Me having a similar scattering power as that of Mn on a single side of vacant layer sites (CuBi); or (3) a random distribution of interlayer species

Defect-free ZnSe nanowire and nano-needle nanostructures

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.Comment: 4 pages, 4 figure

Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires

International audienceWe demonstrate large area fully flexible blue LEDs based on core/shell InGaN/GaN nanowires grown by MOCVD. The fabrication relies on polymer encapsulation, nanowire lift-off and contacting using silver nanowire transparent electrodes. The LEDs exhibit rectifying behavior with a light-up voltage around 3 V. The devices show no electro-luminescence degradation neither under multiple bending down to 3 mm curvature radius nor in time for more than one month storage in ambient conditions without any protecting encapsulation. Fully transparent flexible LEDs with high optical transmittance are also fabricated. Finally, a two-color flexible LED emitting in the green and blue spectral ranges is demonstrated combining two layers of InGaN/GaN nanowires with different In contents. F lexible light-emitting diodes (LEDs) are today a topic of intense research, motivated by their numerous economically relevant applications (e.g., rollable displays, wearable intelligent electronics, lightning, and so forth). Presently, flexible devices mainly use organic materials integrated on lightweight and flexible plastic substrates. Thanks to the flexibility, relative ease of processing, compatibility with various flexible substrates, and their low cost, organic LEDs (OLEDs) are today the key technology for flexible displays. In the past decades, the OLED performance has been tremendously improved. 1−4 However, they still face the issue of a poor time stability caused by the degradation of the electrical conductivity of the organic layers and of the interface degradation in the active region. 5−7 Especially, OLEDs present limitations in the short wavelength range, which has a detrimental influence on the color balance of the displays. Indeed, blue OLEDs suffer from a rather low luminance (around 10

Photon correlation spectroscopy on a single quantum dot embedded in a nanowire

We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots

Optical properties of single ZnTe nanowires grown at low temperature

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires

Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire

Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $\Delta E = 6$ meV between the dark and the bright exciton as well as the spin flip rates between these two states

Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

International audienceWe report the first demonstration of a flexible white phosphor-converted light emitting diodes (LEDs) based on p-n junction core/shell nitride nanowires. GaN nanowires containing 7 radial In 0.2 Ga 0.8 N/GaN quantum wells were grown by metal-organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate and contacted using flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm doesnot yieldany degradation of the LED performance. The maximal measured external quantum efficiency (EQE) of the white LED is 9.3% and the wall plug efficiency is 2.4%

Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire

International audienceWe present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidt