31 research outputs found
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications
A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper
On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications
A new MOS device called Dual-Control Gate Floating Gate Transistor (DCG-FGT) is used as a building block in analog design. This device offers new approaches in circuit design and allows developing new functionalities through two operating modes: Threshold Voltage Adjustable Mode, where the DCG-FGT behaves like a MOS transistor with an electrically adjustable threshold voltage. Mixer Signal Mode where the DCG-FGT can mix two independent signals on its floating gate. This device is developed to be fully compliant with CMOS Non Volatile Memory (NVM) process. An electrical model of the DCG-FGT has been implemented in an electrical simulator to be available for analog design. A DCG-FGT based ring oscillator is studied in this paper
High prevalence of plasmid-mediated quinolone resistance determinants in Enterobacter cloacae isolated from hospitals of the Qazvin, Alborz, and Tehran provinces, Iran
Quinolone Susceptibility and Detection of qnr and aac (6’)-Ib-cr Genes in Community Isolates of Klebsiella pneumoniae
Enhanced Polymerization and Surface Hardness of Colloidal Siloxane Films via Electron Beam Irradiation
Floating gate MOS Transistor with double control gate
Brevet STMicroelectronics - Université de Provence, n° d'application 11/155306, US 724262
Dual-control-gate floating gate transistor: a building block for circuit design
International audienc