52 research outputs found
Spectral and polarization effects in deterministically nonperiodic multilayers containing optically anisotropic and gyrotropic materials
Influence of material anisotropy and gyrotropy on optical properties of
fractal multilayer nanostructures is theoretically investigated. Gyrotropy is
found to uniformly rotate the output polarization for bi-isotropic multilayers
of arbitrary geometrical structure without any changes in transmission spectra.
When introduced in a polarization splitter based on a birefringent fractal
multilayer, isotropic gyrotropy is found to resonantly alter output
polarizations without shifting of transmission peak frequencies. The design of
frequency-selective absorptionless polarizers for polarization-sensitive
integrated optics is outlined
Monte Carlo Simulation of Flash Memory Elementsβ Electrophysical Parameters
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well as calculation of parasitic tunneling current and channel current in the conductive channel of flash memory element. Numerical simulation during the design stage of flash memory element allows working out guidelines for optimization of device parameters defining its performance and reliability. In the work such electrophysical parameters, characterizing electron transport, as mobility and average electron energy, as well as tunneling current and current in the channel of the flash memory element are studied via the numerical simulation by means of Monte Carlo method. Influence of phonon and ionized impurity scattering processes on electron mobility in the channel has been analyzed. It is shown that in the vicinity of drain region a sufficient decrease of electron mobility defined by phonon scattering processes occurs and the growth of parasitic tunneling current is observed which have a negative influence on device characteristics. The developed simulation program may be used in computer-aided design of flash memory elements for the purpose of their structure optimization and improvement of their electrical characteristics
ΠΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΎΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΈΡ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΠΎΠ½ΡΠ΅-ΠΠ°ΡΠ»ΠΎ
Operation of modern flash memory elements is based on electron transport processes in the channel of silicon MOSFETs with floating gate. The aim of this work was calculation of electron mobility and study of the influence of phonon and ionized impurity scattering mechanisms on the mobility, as well as calculation of parasitic tunneling current and channel current in the conductive channel of flash memory element. Numerical simulation during the design stage of flash memory element allows working out guidelines for optimization of device parameters defining its performance and reliability.In the work such electrophysical parameters, characterizing electron transport, as mobility and average electron energy, as well as tunneling current and current in the channel of the flash memory element are studied via the numerical simulation by means of Monte Carlo method. Influence of phonon and ionized impurity scattering processes on electron mobility in the channel has been analyzed. It is shown that in the vicinity of drain region a sufficient decrease of electron mobility defined by phonon scattering processes occurs and the growth of parasitic tunneling current is observed which have a negative influence on device characteristics.The developed simulation program may be used in computer-aided design of flash memory elements for the purpose of their structure optimization and improvement of their electrical characteristics.Π ΠΎΡΠ½ΠΎΠ²Π΅ ΡΡΠ½ΠΊΡΠΈΠΎΠ½ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ Π»Π΅ΠΆΠ°Ρ ΠΏΡΠΎΡΠ΅ΡΡΡ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Π² ΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅ΠΌ ΠΊΠ°Π½Π°Π»Π΅ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ
ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠΎΠ² Ρ ΠΏΠ»Π°Π²Π°ΡΡΠΈΠΌ Π·Π°ΡΠ²ΠΎΡΠΎΠΌ. Π¦Π΅Π»ΡΡ Π΄Π°Π½Π½ΠΎΠΉ ΡΠ°Π±ΠΎΡΡ ΡΠ²Π»ΡΠ»ΠΎΡΡ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΈΠ΅ Π²ΡΡΠΈΡΠ»ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ° ΠΏΠΎ ΡΠ°ΡΡΡΡΡ ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ ΠΈΠ·ΡΡΠ΅Π½ΠΈΡ Π²Π»ΠΈΡΠ½ΠΈΡ Π½Π° ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΡΡΡ ΡΠΎΠ½ΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ ΠΈ ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ Π½Π° ΠΈΠΎΠ½ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠΉ ΠΏΡΠΈΠΌΠ΅ΡΠΈ, Π° ΡΠ°ΠΊΠΆΠ΅ ΡΠ°ΡΡΡΡ ΠΏΠ°ΡΠ°Π·ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΠ½Π½Π΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ° ΠΈ ΡΠΎΠΊΠ° Π² ΠΏΡΠΎΠ²ΠΎΠ΄ΡΡΠ΅ΠΌ ΠΊΠ°Π½Π°Π»Π΅ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ° ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΈΠ΅ Π²ΡΡΠΈΡΠ»ΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ° Π½Π° ΡΡΠ°ΠΏΠ΅ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ ΠΏΠΎΠ·Π²ΠΎΠ»ΠΈΡ Π²ΡΡΠ°Π±ΠΎΡΠ°ΡΡ ΡΠ΅ΠΊΠΎΠΌΠ΅Π½Π΄Π°ΡΠΈΠΈ Π΄Π»Ρ ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΠΏΡΠΈΠ±ΠΎΡΠ°, ΠΎΠΏΡΠ΅Π΄Π΅Π»ΡΡΡΠΈΡ
Π±ΡΡΡΡΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΈΠ΅ ΠΈ Π½Π°Π΄ΡΠΆΠ½ΠΎΡΡΡ Π΅Π³ΠΎ ΡΠ°Π±ΠΎΡΡ.ΠΡΡΠ΅ΠΌ ΡΠΈΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠ° Π² ΡΠ»Π΅ΠΌΠ΅Π½ΡΠ΅ ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΠΎΠ½ΡΠ΅-ΠΠ°ΡΠ»ΠΎ ΡΠ°ΡΡΡΠΈΡΠ°Π½Ρ ΡΠ°ΠΊΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΎΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ, Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΠ·ΡΡΡΠΈΠ΅ ΠΏΠ΅ΡΠ΅Π½ΠΎΡ, ΠΊΠ°ΠΊ ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΡΡΡ, ΡΡΠ΅Π΄Π½ΡΡ ΡΠ½Π΅ΡΠ³ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², Π° ΡΠ°ΠΊΠΆΠ΅ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΡ ΡΡΠ½Π½Π΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ° ΠΈ ΡΠΎΠΊΠ° Π² ΠΊΠ°Π½Π°Π»Π΅ ΠΏΡΠΈΠ±ΠΎΡΠ°. ΠΠ·ΡΡΠ΅Π½ΠΎ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΠΎΠ² ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ Π½Π° ΡΠΎΠ½ΠΎΠ½Π°Ρ
ΠΈ ΠΈΠΎΠ½ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΠΎΠΉ ΠΏΡΠΈΠΌΠ΅ΡΠΈ Π½Π° ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΡΡΡ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Π² ΠΊΠ°Π½Π°Π»Π΅. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ Π²Π±Π»ΠΈΠ·ΠΈ ΠΎΠ±Π»Π°ΡΡΠΈ ΡΡΠΎΠΊΠ° ΠΏΡΠΎΠΈΡΡ
ΠΎΠ΄ΠΈΡ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠ΅ ΡΠ½ΠΈΠΆΠ΅Π½ΠΈΠ΅ ΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΠΎΡΡΠΈ ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², ΠΎΠ±ΡΡΠ»ΠΎΠ²Π»Π΅Π½Π½ΠΎΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΠ°ΠΌΠΈ ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ Π½Π° ΡΠΎΠ½ΠΎΠ½Π°Ρ
, Π° ΡΠ°ΠΊΠΆΠ΅ Π½Π°Π±Π»ΡΠ΄Π°Π΅ΡΡΡ ΡΠΎΡΡ ΠΏΠ°ΡΠ°Π·ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΡΠ½Π½Π΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠΊΠ°, ΡΡΠΎ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡ ΠΊ ΡΡ
ΡΠ΄ΡΠ΅Π½ΠΈΡ ΡΠ°Π±ΠΎΡΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΡΠΈΠ±ΠΎΡΠ°.Π Π°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½Π°Ρ ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌΠ° ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½Π° ΠΏΡΠΈ ΠΊΠΎΠΌΠΏΡΡΡΠ΅ΡΠ½ΠΎΠΌ ΠΏΡΠΎΠ΅ΠΊΡΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΡΠ»Π΅Ρ-ΠΏΠ°ΠΌΡΡΠΈ Ρ ΡΠ΅Π»ΡΡ ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΠΈ ΠΈΡ
ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠΈ ΠΈ ΡΠ»ΡΡΡΠ΅Π½ΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ.
Π§ΠΠ‘ΠΠΠΠΠΠ ΠΠΠΠΠΠΠ ΠΠΠΠΠΠ ΠΠΠΠΠ’Π ΠΠ§ΠΠ‘ΠΠΠ₯ Π₯ΠΠ ΠΠΠ’ΠΠ ΠΠ‘Π’ΠΠ ΠΠΠ£ΠΠΠΠΠ‘Π£ΠΠΠΠΠ ΠΠΠΠΠΠ ΠΠΠ-Π’Π ΠΠΠΠΠ‘Π’ΠΠ Π Π‘Π Π‘Π’Π Π£ΠΠ’Π£Π ΠΠ Β«ΠΠ ΠΠΠΠΠ ΠΠ ΠΠΠΠΠ―Π’ΠΠ ΠΒ»
Today submicron silicon-on-insulator (SOI) MOSFET structures are widely used in different electronic components and also can be used as sensing elements in some applications. The development of devices based on the structures with specified characteristics is impossible without computer simulation of their electric properties. The latter is not a trivial task since many complicated physical processes and effects must be taken into account. In current study ensemble Monte Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The aim of the study is investigation of the influence of interband impact ionization process on the device characteristics and determination of the transistor operation modes when impact ionization process starts to make an appreciable influence on the device functioning. Determination of the modes is very important for adequate and accurate modeling of different devices on the basis of SOI MOSFET structures. Main focus thereby is maid on the comparison of the use of two models of impact ionization process treatment with respect to their influence on the transistor current-voltage characteristics. The first model is based on the frequently used Keldysh approach and the other one utilizes the results obtained via numerical calculations of silicon band structure. It is shown that the use of Keldysh impact ionization model leads to much faster growth of the drain current and provides earlier avalanche breakdown for the SOI MOSFET. It is concluded that the choice between the two considered impact ionization models may be critical for simulation of the device electric characteristics.Β ΠΠ° ΡΠ΅Π³ΠΎΠ΄Π½ΡΡΠ½ΠΈΠΉ Π΄Π΅Π½Ρ ΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΡΠ΅ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ-Π½Π°-ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΠ΅ (ΠΠΠ) ΡΠΈΡΠΎΠΊΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π² ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ²Π°Ρ
, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΌΠΎΠ³ΡΡ ΠΏΡΠΈΠΌΠ΅Π½ΡΡΡΡΡ Π² ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΠ΅Π½ΡΠΎΡΠ½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ². Π Π°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΏΡΠΈΠ±ΠΎΡΠΎΠ² Ρ Π·Π°Π΄Π°Π½Π½ΡΠΌΠΈ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ°ΠΌΠΈ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΡΡΠΈΡ
ΡΡΡΡΠΊΡΡΡ Π½Π΅Π²ΠΎΠ·ΠΌΠΎΠΆΠ½Π° Π±Π΅Π· ΠΊΠΎΠΌΠΏΡΡΡΠ΅ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ². ΠΠ»Ρ Π³Π»ΡΠ±ΠΎΠΊΠΎΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΡΡ
ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ ΡΡΠΎ Π²Π΅ΡΡΠΌΠ° ΡΡΡΠ΄Π½Π°Ρ Π·Π°Π΄Π°ΡΠ°, ΠΏΠΎΡΠΊΠΎΠ»ΡΠΊΡ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎ ΡΡΠΈΡΡΠ²Π°ΡΡ ΠΌΠ½ΠΎΠ³ΠΈΠ΅ ΡΠ»ΠΎΠΆΠ½ΡΠ΅ ΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΡ ΠΈ ΡΡΡΠ΅ΠΊΡΡ, ΠΈΠΌΠ΅ΡΡΠΈΠ΅ ΠΌΠ΅ΡΡΠΎ Π² ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΠΎΠΌ ΠΏΡΠΈΠ±ΠΎΡΠ΅. Π Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΠ΅ ΠΌΠ½ΠΎΠ³ΠΎΡΠ°ΡΡΠΈΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΠΎΠ½ΡΠ΅-ΠΠ°ΡΠ»ΠΎ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ Π΄ΡΡΠΎΠΊ Π² Π³Π»ΡΠ±ΠΎΠΊΠΎΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΠΎΠΌ n-ΠΊΠ°Π½Π°Π»ΡΠ½ΠΎΠΌ ΠΠΠ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ΅ Ρ Π΄Π»ΠΈΠ½ΠΎΠΉ ΠΊΠ°Π½Π°Π»Π° 100 Π½ΠΌ. Π¦Π΅Π»ΡΡ Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΡ ΡΠ²ΠΈΠ»ΠΎΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π²Π»ΠΈΡΠ½ΠΈΡ ΠΏΡΠΎΡΠ΅ΡΡΠ° ΠΌΠ΅ΠΆΠ·ΠΎΠ½Π½ΠΎΠΉ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ Π½Π° Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ ΡΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΈΠ΅ ΡΠ°ΠΊΠΈΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² Π΅Π³ΠΎ ΡΠ°Π±ΠΎΡΡ, ΠΏΡΠΈ ΠΊΠΎΡΠΎΡΡΡ
ΠΏΡΠΎΡΠ΅ΡΡ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ Π½Π°ΡΠΈΠ½Π°Π΅Ρ ΠΎΠΊΠ°Π·ΡΠ²Π°ΡΡ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠ΅ Π²Π»ΠΈΡΠ½ΠΈΠ΅ Π½Π° ΡΠ°Π±ΠΎΡΡ ΠΏΡΠΈΠ±ΠΎΡΠ°. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΡΡΠΈΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠ²Π»ΡΠ΅ΡΡΡ ΠΊΡΠ°ΠΉΠ½Π΅ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΡΠΌ Π΄Π»Ρ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΠ³ΠΎ ΠΈ ΠΊΠΎΡΡΠ΅ΠΊΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΠΠ-ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ. ΠΡΠΈ ΡΡΠΎΠΌ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠ΅ Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ ΠΎΠ±ΡΠ°ΡΠ΅Π½ΠΎ Π½Π° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠ΅ Π΄Π²ΡΡ
ΠΌΠΎΠ΄Π΅Π»Π΅ΠΉ ΡΡΠ΅ΡΠ° ΠΏΡΠΎΡΠ΅ΡΡΠ° ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠΎ ΡΡΠ΅ΠΏΠ΅Π½ΠΈ ΠΈΡ
Π²Π»ΠΈΡΠ½ΠΈΡ Π½Π° Π²ΠΎΠ»ΡΡΠ°ΠΌΠΏΠ΅ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ°. ΠΠ΅ΡΠ²Π°Ρ, Π°Π½Π°Π»ΠΈΡΠΈΡΠ΅ΡΠΊΠ°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ, ΠΎΡΠ½ΠΎΠ²Π°Π½Π° Π½Π° ΡΠΈΡΠΎΠΊΠΎ ΠΈΠ·Π²Π΅ΡΡΠ½ΠΎΠΌ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄Π΅ ΠΠ΅Π»Π΄ΡΡΠ°, Π° Π²ΠΎ Π²ΡΠΎΡΠΎΠΉ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠΈΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠ°ΡΡΠ΅ΡΠ° Π·ΠΎΠ½Π½ΠΎΠΉ ΡΡΡΡΠΊΡΡΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΠ΅Π»Π΄ΡΡΠ° ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡ ΠΊ Π±ΠΎΠ»Π΅Π΅ Π±ΡΡΡΡΠΎΠΌΡ ΡΠΎΡΡΡ ΡΠΎΠΊΠ° ΡΡΠΎΠΊΠ° ΠΈ, ΠΊΠ°ΠΊ ΡΠ»Π΅Π΄ΡΡΠ²ΠΈΠ΅, ΠΊ ΡΠΊΠΎΡΠ΅ΠΉΡΠ΅ΠΌΡ Π»Π°Π²ΠΈΠ½Π½ΠΎΠΌΡ ΠΏΡΠΎΠ±ΠΎΡ ΠΠΠ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΠΎΠΉ ΡΡΡΡΠΊΡΡΡΡ. Π‘Π΄Π΅Π»Π°Π½ Π²ΡΠ²ΠΎΠ΄ ΠΎ ΡΠΎΠΌ, ΡΡΠΎ Π²ΡΠ±ΠΎΡ ΠΌΠ΅ΠΆΠ΄Ρ Π΄Π²ΡΠΌΡ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΠΌΡΠΌΠΈ ΠΌΠΎΠ΄Π΅Π»ΡΠΌΠΈ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΠΊΡΠΈΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΏΡΠΈ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΡΠΈΠ±ΠΎΡΠ°.
ΠΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ Π²Π»ΠΈΡΠ½ΠΈΡ ΡΠΈΠΏΠ° ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠΈ Π½Π° ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ Π²ΡΡΠΎΠΊΠΎΠ²ΠΎΠ»ΡΡΠ½ΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΡΡ Π΄ΠΈΠΎΠ΄ΠΎΠ²
The device-process simulation of the high-voltage silicon diode was performed at its forming in three types of epitaxial film: 1) 17.0SEPh2.0 (silicon doped phosphor of electron type conductivity with the thickness d = 17 ΞΌm and resistivity of pv = 2.0 Ohm.sm); 2) 25.0SEPh6.0 (d = 25.0 ΞΌm, pv = 6.0 Ohm.sm); 3) 25.0SEPh20.0 (d = 25.0 ΞΌm, pv = 20.0 Ohm.sm). Technological process parameters of diode structure making were defined and its design data was calculated for three types of epitaxial film, the comparison of calculated values with typical ones obtained experimentally was carried out. It was determined that the difference between calculated values and typical ones obtained by experiment is not more then Β±10%. The device modeling of diode was performed and it was investigated how the thickness and resistivity of epitaxial film influence on structural and electrical features of diode.ΠΡΠΈΠ²ΠΎΠ΄ΡΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΎΠΏΠ΅ΡΠ°ΡΠΈΠΉ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠ°ΡΡΡΡΡΠ° ΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ Π²ΡΡΠΎΠΊΠΎΠ²ΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΠ΅Π²ΠΎΠ³ΠΎ Π΄ΠΈΠΎΠ΄Π° ΠΏΡΠΈ ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΠΈ Π΅Π³ΠΎ Π² ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠ΅ ΡΡΠ΅Ρ
ΡΠΈΠΏΠΎΠ²: 17ΠΠΠ€2,0 (ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ, Π»Π΅Π³ΠΈΡΠΎΠ²Π°Π½Π½ΡΠΉ ΡΠΎΡΡΠΎΡΠΎΠΌ, ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΡΠΈΠΏΠ° ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠΌΠΎΡΡΠΈ ΡΠΎΠ»ΡΠΈΠ½ΠΎΠΉ d = 17 ΠΌΠΊΠΌ Ρ ΡΠ΄Π΅Π»Ρ -Π½ΡΠΌ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅ΠΌ ΡΡ = 2,0 ΠΠΌ.ΡΠΌ); 25,0ΠΠΠ€6,0 (d = 25,0 ΠΌΠΊΠΌ, ΡΡ = 6,0 ΠΠΌ.ΡΠΌ); 25,0ΠΠΠ€20,0 (d = 25,0 ΠΌΠΊΠΌ, ΡΡ = 20,0 ΠΠΌ.ΡΠΌ). ΠΡΠΎΠ²Π΅Π΄Π΅Π½ ΡΠ°ΡΡΠ΅Ρ ΡΠ°ΠΊΠΈΡ
ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΡΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² Π΄ΠΈΠΎΠ΄Π½ΠΎΠΉ ΡΡΡΡΠΊΡΡΡΡ, ΠΊΠ°ΠΊ ΡΠΎΠ»ΡΠΈΠ½Π° ΠΎΡΡΠ°ΡΠΎΡΠ½ΠΎΠ³ΠΎ ΠΎΠΊΠΈΡΠ»Π°, ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅, Π³Π»ΡΠ±ΠΈΠ½Π° Π·Π°Π»Π΅Π³Π°Π½ΠΈΡ p-n-ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Π°. ΠΡΠΏΠΎΠ»Π½Π΅Π½ ΡΡΠ°Π²Π½ΠΈΡΠ΅Π»ΡΠ½ΡΠΉ Π°Π½Π°Π»ΠΈΠ· ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΎΠ² ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠΊΠ°Π·Π°Π½Π½ΡΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² Ρ ΠΈΡ
ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠΌΠΈ ΡΠΈΠΏΠΎΠ²ΡΠΌΠΈ Π·Π½Π°ΡΠ΅Π½ΠΈΡΠΌΠΈ. Π Π°ΡΡΡΠΈΡΠ°Π½Ρ Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΠΈ Π·Π½Π°ΡΠ΅Π½ΠΈΠΉ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΡΠΎΠΊΠ° Π΄ΠΈΠΎΠ΄Π° ΠΎΡ ΠΏΡΡΠΌΠΎΠ³ΠΎ ΠΈ ΠΎΠ±ΡΠ°ΡΠ½ΠΎΠ³ΠΎ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Π½Π°ΠΏΡΡΠΆΠ΅Π½ΠΈΠΉ, ΠΏΡΠΈΠΊΠ»Π°Π΄ΡΠ²Π°Π΅ΠΌΡΡ
ΠΊ Ρ-n-ΠΏΠ΅ΡΠ΅Ρ
ΠΎΠ΄Ρ ΠΏΡΠΈΠ±ΠΎΡΠ°, Π΄Π»Ρ ΡΡΠ΅Ρ
ΡΠΈΠΏΠΎΠ² ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠΈ. ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΎ Π²Π»ΠΈΡΠ½ΠΈΠ΅ ΡΠ°ΠΊΠΈΡ
ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΠΎΠ² ΡΠΏΠΈΡΠ°ΠΊΡΠΈΠ°Π»ΡΠ½ΠΎΠΉ ΠΏΠ»Π΅Π½ΠΊΠΈ, ΠΊΠ°ΠΊ ΡΠΎΠ»ΡΠΈΠ½Π° d ΠΈ ΡΠ΄Π΅Π»ΡΠ½ΠΎΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅, Π½Π° ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΡΠ΅ ΠΏΠ°ΡΠ°ΠΌΠ΅ΡΡΡ ΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ Π΄ΠΈΠΎΠ΄Π°
Π£Π‘ΠΠΠΠ Π¨ΠΠΠ‘Π’ΠΠΠΠΠΠΠ Π’ΠΠ₯ΠΠΠΠΠΠΠ§ΠΠ‘ΠΠΠΠ ΠΠΠ Π¨Π Π£Π’Π ΠΠΠΠΠ’ΠΠΠΠΠΠΠ― Π ΠΠ ΠΠΠΠ ΠΠ-Π’ΠΠ₯ΠΠΠΠΠΠΠ§ΠΠ‘ΠΠΠ ΠΠΠΠΠΠΠ ΠΠΠΠΠΠ ΠΠΠΠΠΠ―Π ΠΠΠΠ Π’Π ΠΠΠΠΠ‘Π’ΠΠ Π Π‘Π Π‘Π’ΠΠ’ΠΠ§ΠΠ‘ΠΠΠ ΠΠΠΠ£ΠΠ¦ΠΠΠ
The results of the bipolar static induction transistor (BSIT) making process flow improvement and its device-process simulation are presented. The process flow improvement have allowed to reduce number of metal intermediate subject copies (MISC) applied at projection photolithography by one and to receive experimental samples of transistor with required electrical characteristic. The BSIT device simulation was performed with using the developed by authors model of transistor and the software package MOD-1D.ΠΡΠΈΠ²Π΅Π΄Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΡΠΎΠ²Π΅ΡΡΠ΅Π½ΡΡΠ²ΠΎΠ²Π°Π½ΠΈΡ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠ°ΡΡΡΡΡΠ° ΠΈΠ·Π³ΠΎΡΠΎΠ²Π»Π΅Π½ΠΈΡ Π±ΠΈΠΏΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° ΡΠΎ ΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΈΠ½Π΄ΡΠΊΡΠΈΠ΅ΠΉ (ΠΠ‘ΠΠ’) ΠΈ Π΅Π³ΠΎ ΠΏΡΠΈΠ±ΠΎΡΠ½ΠΎ-ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ. Π£ΡΠΎΠ²Π΅ΡΡΠ΅Π½ΡΡΠ²ΠΎΠ²Π°Π½ΠΈΠ΅ ΠΌΠ°ΡΡΡΡΡΠ° ΠΏΠΎΠ·Π²ΠΎΠ»ΠΈΠ»ΠΎ ΡΠΎΠΊΡΠ°ΡΠΈΡΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²ΠΎ ΠΌΠ΅ΡΠ°Π»Π»ΠΈΠ·ΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΏΡΠΎΠΌΠ΅ΠΆΡΡΠΎΡΠ½ΡΡ
ΠΎΡΠΈΠ³ΠΈΠ½Π°Π»ΠΎΠ² (ΠΠΠ), ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΠ΅ΠΌΡΡ
ΠΏΡΠΈ ΠΏΡΠΎΠ΅ΠΊΡΠΈΠΎΠ½Π½ΠΎΠΉ ΡΠΎΡΠΎΠ»ΠΈΡΠΎΠ³ΡΠ°ΡΠΈΠΈ, Π½Π° ΠΎΠ΄ΠΈΠ½, ΠΈ ΠΏΠΎΠ»ΡΡΠΈΡΡ ΡΠΊΡΠΏΠ΅ΡΠΈΠΌΠ΅Π½ΡΠ°Π»ΡΠ½ΡΠ΅ ΠΎΠ±ΡΠ°Π·ΡΡ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° Ρ ΡΡΠ΅Π±ΡΠ΅ΠΌΡΠΌΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΠΌΠΈ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ°ΠΌΠΈ. ΠΡΠΈΠ±ΠΎΡΠ½ΠΎΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΠ‘ΠΠ’ Π±ΡΠ»ΠΎ Π²ΡΠΏΠΎΠ»Π½Π΅Π½ΠΎ Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΡΠ°Π·ΡΠ°Π±ΠΎΡΠ°Π½Π½ΡΡ
Π°Π²ΡΠΎΡΠ°ΠΌΠΈ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° ΠΈ ΠΊΠΎΠΌΠΏΠ»Π΅ΠΊΡΠ° ΠΏΡΠΎΠ³ΡΠ°ΠΌΠΌ MOD-1D
Plasmonic nanoparticle monomers and dimers: From nano-antennas to chiral metamaterials
We review the basic physics behind light interaction with plasmonic
nanoparticles. The theoretical foundations of light scattering on one metallic
particle (a plasmonic monomer) and two interacting particles (a plasmonic
dimer) are systematically investigated. Expressions for effective particle
susceptibility (polarizability) are derived, and applications of these results
to plasmonic nanoantennas are outlined. In the long-wavelength limit, the
effective macroscopic parameters of an array of plasmonic dimers are
calculated. These parameters are attributable to an effective medium
corresponding to a dilute arrangement of nanoparticles, i.e., a metamaterial
where plasmonic monomers or dimers have the function of "meta-atoms". It is
shown that planar dimers consisting of rod-like particles generally possess
elliptical dichroism and function as atoms for planar chiral metamaterials. The
fabricational simplicity of the proposed rod-dimer geometry can be used in the
design of more cost-effective chiral metamaterials in the optical domain.Comment: submitted to Appl. Phys.
Π§ΠΈΡΠ»Π΅Π½Π½ΠΎΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ Ρ Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ Π³Π»ΡΠ±ΠΎΠΊΠΎΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΠΎΠ³ΠΎ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ° ΡΠΎ ΡΡΡΡΠΊΡΡΡΠΎΠΉ Β«ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ Π½Π° ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΠ΅Β»
ΠΠ° ΡΠ΅Π³ΠΎΠ΄Π½ΡΡΠ½ΠΈΠΉ Π΄Π΅Π½Ρ ΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΡΠ΅ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΠΉ-Π½Π°-ΠΈΠ·ΠΎΠ»ΡΡΠΎΡΠ΅ (ΠΠΠ) ΡΠΈΡΠΎΠΊΠΎ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ Π² ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½Π½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ²Π°Ρ
, Π° ΡΠ°ΠΊΠΆΠ΅ ΠΌΠΎΠ³ΡΡ ΠΏΡΠΈΠΌΠ΅Π½ΡΡΡΡΡ Π² ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΠ΅Π½ΡΠΎΡΠ½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ². Π Π°Π·ΡΠ°Π±ΠΎΡΠΊΠ° ΠΏΡΠΈΠ±ΠΎΡΠΎΠ² Ρ Π·Π°Π΄Π°Π½Π½ΡΠΌΠΈ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠ°ΠΌΠΈ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΡΡΠΈΡ
ΡΡΡΡΠΊΡΡΡ Π½Π΅Π²ΠΎΠ·ΠΌΠΎΠΆΠ½Π° Π±Π΅Π· ΠΊΠΎΠΌΠΏΡΡΡΠ΅ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΠΈΡ
ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ². ΠΠ»Ρ Π³Π»ΡΠ±ΠΎΠΊΠΎΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΡΡ
ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ ΡΡΠΎ Π²Π΅ΡΡΠΌΠ° ΡΡΡΠ΄Π½Π°Ρ Π·Π°Π΄Π°ΡΠ°, ΠΏΠΎΡΠΊΠΎΠ»ΡΠΊΡ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎ ΡΡΠΈΡΡΠ²Π°ΡΡ ΠΌΠ½ΠΎΠ³ΠΈΠ΅ ΡΠ»ΠΎΠΆΠ½ΡΠ΅ ΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΠΏΡΠΎΡΠ΅ΡΡΡ ΠΈ ΡΡΡΠ΅ΠΊΡΡ, ΠΈΠΌΠ΅ΡΡΠΈΠ΅ ΠΌΠ΅ΡΡΠΎ Π² ΠΏΠΎΠ»ΡΠΏΡΠΎΠ²ΠΎΠ΄Π½ΠΈΠΊΠΎΠ²ΠΎΠΌ ΠΏΡΠΈΠ±ΠΎΡΠ΅. Π Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΠ΅ ΠΌΠ½ΠΎΠ³ΠΎΡΠ°ΡΡΠΈΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΠΎΠ½ΡΠ΅-ΠΠ°ΡΠ»ΠΎ ΠΏΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠ΅ ΠΏΠ΅ΡΠ΅Π½ΠΎΡΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² ΠΈ Π΄ΡΡΠΎΠΊ Π² Π³Π»ΡΠ±ΠΎΠΊΠΎΡΡΠ±ΠΌΠΈΠΊΡΠΎΠ½Π½ΠΎΠΌ n-ΠΊΠ°Π½Π°Π»ΡΠ½ΠΎΠΌ ΠΠΠ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ΅ Ρ Π΄Π»ΠΈΠ½ΠΎΠΉ ΠΊΠ°Π½Π°Π»Π° 100 Π½ΠΌ. Π¦Π΅Π»ΡΡ Π½Π°ΡΡΠΎΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΡ ΡΠ²ΠΈΠ»ΠΎΡΡ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΠ΅ Π²Π»ΠΈΡΠ½ΠΈΡ ΠΏΡΠΎΡΠ΅ΡΡΠ° ΠΌΠ΅ΠΆΠ·ΠΎΠ½Π½ΠΎΠΉ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ Π½Π° Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ°, Π° ΡΠ°ΠΊΠΆΠ΅ ΡΡΡΠ°Π½ΠΎΠ²Π»Π΅Π½ΠΈΠ΅ ΡΠ°ΠΊΠΈΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² Π΅Π³ΠΎ ΡΠ°Π±ΠΎΡΡ, ΠΏΡΠΈ ΠΊΠΎΡΠΎΡΡΡ
ΠΏΡΠΎΡΠ΅ΡΡ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ Π½Π°ΡΠΈΠ½Π°Π΅Ρ ΠΎΠΊΠ°Π·ΡΠ²Π°ΡΡ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠ΅ Π²Π»ΠΈΡΠ½ΠΈΠ΅ Π½Π° ΡΠ°Π±ΠΎΡΡ ΠΏΡΠΈΠ±ΠΎΡΠ°. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΡΡΠΈΡ
ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠ²Π»ΡΠ΅ΡΡΡ ΠΊΡΠ°ΠΉΠ½Π΅ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΡΠΌ Π΄Π»Ρ Π°Π΄Π΅ΠΊΠ²Π°ΡΠ½ΠΎΠ³ΠΎ ΠΈ ΠΊΠΎΡΡΠ΅ΠΊΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ ΡΠ°Π·Π»ΠΈΡΠ½ΡΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΠΠ-ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΡΡ
ΡΡΡΡΠΊΡΡΡ. ΠΡΠΈ ΡΡΠΎΠΌ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠ΅ Π²Π½ΠΈΠΌΠ°Π½ΠΈΠ΅ ΠΎΠ±ΡΠ°ΡΠ΅Π½ΠΎ Π½Π° ΡΡΠ°Π²Π½Π΅Π½ΠΈΠ΅ Π΄Π²ΡΡ
ΠΌΠΎΠ΄Π΅Π»Π΅ΠΉ ΡΡΠ΅ΡΠ° ΠΏΡΠΎΡΠ΅ΡΡΠ° ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΏΠΎ ΡΡΠ΅ΠΏΠ΅Π½ΠΈ ΠΈΡ
Π²Π»ΠΈΡΠ½ΠΈΡ Π½Π° Π²ΠΎΠ»ΡΡΠ°ΠΌΠΏΠ΅ΡΠ½ΡΠ΅ Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊΠΈ ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ°. ΠΠ΅ΡΠ²Π°Ρ, Π°Π½Π°Π»ΠΈΡΠΈΡΠ΅ΡΠΊΠ°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ, ΠΎΡΠ½ΠΎΠ²Π°Π½Π° Π½Π° ΡΠΈΡΠΎΠΊΠΎ ΠΈΠ·Π²Π΅ΡΡΠ½ΠΎΠΌ ΠΏΠΎΠ΄Ρ
ΠΎΠ΄Π΅ ΠΠ΅Π»Π΄ΡΡΠ°, Π° Π²ΠΎ Π²ΡΠΎΡΠΎΠΉ ΠΈΡΠΏΠΎΠ»ΡΠ·ΡΡΡΡΡ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠΈΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΡΠ°ΡΡΠ΅ΡΠ° Π·ΠΎΠ½Π½ΠΎΠΉ ΡΡΡΡΠΊΡΡΡΡ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ ΠΌΠΎΠ΄Π΅Π»ΠΈ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΠ΅Π»Π΄ΡΡΠ° ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡ ΠΊ Π±ΠΎΠ»Π΅Π΅ Π±ΡΡΡΡΠΎΠΌΡ ΡΠΎΡΡΡ ΡΠΎΠΊΠ° ΡΡΠΎΠΊΠ° ΠΈ, ΠΊΠ°ΠΊ ΡΠ»Π΅Π΄ΡΡΠ²ΠΈΠ΅, ΠΊ ΡΠΊΠΎΡΠ΅ΠΉΡΠ΅ΠΌΡ Π»Π°Π²ΠΈΠ½Π½ΠΎΠΌΡ ΠΏΡΠΎΠ±ΠΎΡ ΠΠΠ ΠΠΠ-ΡΡΠ°Π½Π·ΠΈΡΡΠΎΡΠ½ΠΎΠΉ ΡΡΡΡΠΊΡΡΡΡ. Π‘Π΄Π΅Π»Π°Π½ Π²ΡΠ²ΠΎΠ΄ ΠΎ ΡΠΎΠΌ, ΡΡΠΎ Π²ΡΠ±ΠΎΡ ΠΌΠ΅ΠΆΠ΄Ρ Π΄Π²ΡΠΌΡ ΡΠ°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΠΌΡΠΌΠΈ ΠΌΠΎΠ΄Π΅Π»ΡΠΌΠΈ ΡΠ΄Π°ΡΠ½ΠΎΠΉ ΠΈΠΎΠ½ΠΈΠ·Π°ΡΠΈΠΈ ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ ΠΊΡΠΈΡΠΈΡΠ΅ΡΠΊΠΈΠΌ ΠΏΡΠΈ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
Ρ
Π°ΡΠ°ΠΊΡΠ΅ΡΠΈΡΡΠΈΠΊ ΠΏΡΠΈΠ±ΠΎΡΠ°
NUMERICAL SIMULATION OF ELECTRIC CHARACTERISTICS OF DEEP SUBMICRON SILICON-ON-INSULATOR MOS TRANSISTOR
Today submicron silicon-on-insulator (SOI) MOSFET structures are widely used in different electronic components and also can be used as sensing elements in some applications. The development of devices based on the structures with specified characteristics is impossible without computer simulation of their electric properties. The latter is not a trivial task since many complicated physical processes and effects must be taken into account. In current study ensemble Monte Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The aim of the study is investigation of the influence of interband impact ionization process on the device characteristics and determination of the transistor operation modes when impact ionization process starts to make an appreciable influence on the device functioning. Determination of the modes is very important for adequate and accurate modeling of different devices on the basis of SOI MOSFET structures. Main focus thereby is maid on the comparison of the use of two models of impact ionization process treatment with respect to their influence on the transistor current-voltage characteristics. The first model is based on the frequently used Keldysh approach and the other one utilizes the results obtained via numerical calculations of silicon band structure. It is shown that the use of Keldysh impact ionization model leads to much faster growth of the drain current and provides earlier avalanche breakdown for the SOI MOSFET. It is concluded that the choice between the two considered impact ionization models may be critical for simulation of the device electric characteristics
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