Thermoelectric device with multiple, nanometer scale, elements

A thermoelectric device formed of nanowires on the nm scale. The nanowires are preferably of a size that causes quantum confinement effects within the wires. The wires are connected together into a bundle to increase the power density

Testing of Milliwatt Power Source Components

A milliwatt power source (MPS) has been developed to satisfy the requirements of several potential solar system exploration missions. The MPS is a small power source consisting of three major components: a space qualified heat source (RHU), a thermopile (thermoelectric converter or TEC) and a container to direct the RHU heat to the TEC. Thermopiles from Hi-Z Technology, Inc. of San Diego and the Institute of Thermoelectricity of Chernivtsi Ukraine suitable for the MPS were tested and shown to perform as expected, producing 40 mW of power with a temperature difference of about 170°C. Such thermopiles were successfully life tested for up to a year. A MPS container designed and built by Swales Aerospace was tested with both a TEC simulator and actual TEC. The Swales unit, tested under dynamic vacuum, provided less temperature difference than anticipated, such that the TEC produced 20 mW of power with heat input equivalent to a RHU

Skutterudites: An Update

Abstract Materials with the skutterudite crystal structure possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-theart thermoelectric materials. Studies conducted at JPL on CoAs 3 , RhAs 3 , CoSb 3 , RhSb 3 and IrSb 3 have shown that ptype conductivity samples are characterized by carriers with low effective masses and very high mobilities, low electrical resistivities and moderate Seebeck coefficients. The carrier mobilities of n-type samples are about an order of magnitude lower, but low electrical resistivities and relatively large Seebeck coefficients can still be obtained at high doping levels. The room temperature lattice thermal conductivities of these binary skutterudites was found to be 7 to 10 times larger than that of Bi 2 Te 3 . This results in low ZT values at 300K, though very heavily doped n-type CoSb 3 samples can achieve ZT~1 at 600 o C. Several research groups, mostly in the U.S., are now working on understanding and optimizing the transport properties of skutterudites. Most of the efforts are focusing on reducing the lattice thermal conductivity by filling the empty octant cages in the skutterudite structure with rare earth atoms. Additional approaches have also been pursued at JPL, in particular the formation of solid solutions and alloys, and the study of novel ternary skutterudite compounds. Recent experiments have demonstrated that ternary compounds such as Ru 0.5 Pd 0.5 Sb 3 and filled skutterudites such as CeFe 4 Sb 12 had much lower lattice thermal conductivity. High ZT values have been obtained for several filled skutterudites in the 500-700 o C temperature range, but figures of merit at 300K are still low. This paper reviews recent experimental and theoretical results on skutterudites with a particular emphasis on the transport properties of ternary compounds and filled compositions. The latest results obtained at JPL are presented and the possibility of obtaining high ZT values near room temperature is discussed

Electronic, vibrational and transport properties of pnictogen substituted ternary skutterudites

First principles calculations are used to investigate electronic band structure and vibrational spectra of pnictogen substituted ternary skutterudites. We compare the results with the prototypical binary composition CoSb$_3$ to identify the effects of substitutions on the Sb site, and evaluate the potential of ternary skutterudites for thermoelectric applications. Electronic transport coefficients are computed within the Boltzmann transport formalism assuming a constant relaxation time, using a new methodology based on maximally localized Wannier function interpolation. Our results point to a large sensitivity of the electronic transport coefficients to carrier concentration and to scattering mechanisms associated with the enhanced polarity. The ionic character of the bonds is used to explain the detrimental effect on the thermoelectric properties

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component

Some Properties of Re 2 Te 5 -based Materials

Abstract Re2Te5 is a semiconducting compound with an energy band gap of about 0.8 eV. It has a relatively complex crystal structure with 84 atoms per unit cell. Initial results obtained on p-type polycrystalline samples showed that they possess large Seebeck coefficient values but large electrical resistivity values. They also exhibit very low thermal conductivity with a room temperature value of 13 mW/cmK. Another attracting feature of Re2Te5 is the possibility to insert a variety of atoms in the large voids (2.8 Å in diameter) of the crystal structure to form Re6M2Te15 filled compositions. The void fillers could act as phonon scattering centers, further reducing the thermal conductivity in these materials. As part of an effort to evaluate the potential of Re2Te5-based materials for thermoelectric applications, we are currently exploring the synthesis and properties of filled compositions as well as n-type Re2Te5 samples. We present and discuss in this paper initial results obtained on Fe and Ag doped Re2Te5 samples

Microfabricated Thermoelectric Power-Generation Devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component