5,507 research outputs found
Self-sustained current oscillations in the kinetic theory of semiconductor superlattices
We present the first numerical solutions of a kinetic theory description of
self-sustained current oscillations in n-doped semiconductor superlattices. The
governing equation is a single-miniband Boltzmann-Poisson transport equation
with a BGK (Bhatnagar-Gross-Krook) collision term. Appropriate boundary
conditions for the distribution function describe electron injection in the
contact regions. These conditions seamlessly become Ohm's law at the injecting
contact and the zero charge boundary condition at the receiving contact when
integrated over the wave vector. The time-dependent model is numerically solved
for the distribution function by using the deterministic Weighted Particle
Method. Numerical simulations are used to ascertain the convergence of the
method. The numerical results confirm the validity of the Chapman-Enskog
perturbation method used previously to derive generalized drift-diffusion
equations for high electric fields because they agree very well with numerical
solutions thereof.Comment: 26 pages, 16 figures, to appear in J. Comput. Phy
Chaos in resonant-tunneling superlattices
Spatio-temporal chaos is predicted to occur in n-doped semiconductor
superlattices with sequential resonant tunneling as their main charge transport
mechanism. Under dc voltage bias, undamped time-dependent oscillations of the
current (due to the motion and recycling of electric field domain walls) have
been observed in recent experiments. Chaos is the result of forcing this
natural oscillation by means of an appropriate external microwave signal.Comment: 3 pages, LaTex, RevTex, 3 uuencoded figures (1.2M) are available upon
request from [email protected], to appear in Phys.Rev.
Chaotic motion of space charge wavefronts in semiconductors under time-independent voltage bias
A standard drift-diffusion model of space charge wave propagation in
semiconductors has been studied numerically and analytically under dc voltage
bias. For sufficiently long samples, appropriate contact resistivity and
applied voltage - such that the sample is biased in a regime of negative
differential resistance - we find chaos in the propagation of nonlinear fronts
(charge monopoles of alternating sign) of electric field. The chaos is always
low-dimensional, but has a complex spatial structure; this behavior can be
interpreted using a finite dimensional asymptotic model in which the front
(charge monopole) positions and the electrical current are the only dynamical
variables.Comment: 12 pages, 8 figure
A hybrid model for chaotic front dynamics: From semiconductors to water tanks
We present a general method for studying front propagation in nonlinear
systems with a global constraint in the language of hybrid tank models. The
method is illustrated in the case of semiconductor superlattices, where the
dynamics of the electron accumulation and depletion fronts shows complex
spatio-temporal patterns, including chaos. We show that this behavior may be
elegantly explained by a tank model, for which analytical results on the
emergence of chaos are available. In particular, for the case of three tanks
the bifurcation scenario is characterized by a modified version of the
one-dimensional iterated tent-map.Comment: 4 pages, 4 figure
Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions
A general formulation of boundary conditions for semiconductor-metal contacts
follows from a phenomenological procedure sketched here. The resulting boundary
conditions, which incorporate only physically well-defined parameters, are used
to study the classical unipolar drift-diffusion model for the Gunn effect. The
analysis of its stationary solutions reveals the presence of bistability and
hysteresis for a certain range of contact parameters. Several types of Gunn
effect are predicted to occur in the model, when no stable stationary solution
exists, depending on the value of the parameters of the injecting contact
appearing in the boundary condition. In this way, the critical role played by
contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure
Chaotic dynamics of electric-field domains in periodically driven superlattices
Self-sustained time-dependent current oscillations under dc voltage bias have
been observed in recent experiments on n-doped semiconductor superlattices with
sequential resonant tunneling. The current oscillations are caused by the
motion and recycling of the domain wall separating low- and high-electric-
field regions of the superlattice, as the analysis of a discrete drift model
shows and experimental evidence supports. Numerical simulation shows that
different nonlinear dynamical regimes of the domain wall appear when an
external microwave signal is superimposed on the dc bias and its driving
frequency and driving amplitude vary. On the frequency - amplitude parameter
plane, there are regions of entrainment and quasiperiodicity forming Arnol'd
tongues. Chaos is demonstrated to appear at the boundaries of the tongues and
in the regions where they overlap. Coexistence of up to four electric-field
domains randomly nucleated in space is detected under ac+dc driving.Comment: 9 pages, LaTex, RevTex. 12 uuencoded figures (1.8M) should be
requested by e-mail from the autho
Generalized drift-diffusion model for miniband superlattices
A drift-diffusion model of miniband transport in strongly coupled
superlattices is derived from the single-miniband Boltzmann-Poisson transport
equation with a BGK (Bhatnagar-Gross-Krook) collision term. We use a consistent
Chapman-Enskog method to analyze the hyperbolic limit, at which collision and
electric field terms dominate the other terms in the Boltzmann equation. The
reduced equation is of the drift-diffusion type, but it includes additional
terms, and diffusion and drift do not obey the Einstein relation except in the
limit of high temperatures.Comment: 4 pages, 3 figures, double-column revtex. To appear as RC in PR
Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model
A discrete model is introduced to account for the time-periodic oscillations
of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40
period AlAs/GaAs superlattice. Basic ingredients are an effective negative
differential resistance due to the sequential resonant tunneling of the
photoexcited carriers through the potential barriers, and a rate equation for
the holes that incorporates photogeneration and recombination. The
photoexciting laser acts as a damping factor ending the oscillations when its
power is large enough. The model explains: (i) the known oscillatory static I-V
characteristic curve through the formation of a domain wall connecting high and
low electric field domains, and (ii) the photocurrent and photoluminescence
time-dependent oscillations after the domain wall is formed. In our model, they
arise from the combined motion of the wall and the shift of the values of the
electric field at the domains. Up to a certain value of the photoexcitation,
the non-uniform field profile with two domains turns out to be metastable:
after the photocurrent oscillations have ceased, the field profile slowly
relaxes toward the uniform stationary solution (which is reached on a much
longer time scale). Multiple stability of stationary states and hysteresis are
also found. An interpretation of the oscillations in the photoluminescence
spectrum is also given.Comment: 34 pages, REVTeX 3.0, 10 figures upon request, MA/UC3M/07/9
Closure of the Monte Carlo dynamical equations in the spherical Sherrington-Kirkpatrick model
We study the analytical solution of the Monte Carlo dynamics in the spherical
Sherrington-Kirkpatrick model using the technique of the generating function.
Explicit solutions for one-time observables (like the energy) and two-time
observables (like the correlation and response function) are obtained. We show
that the crucial quantity which governs the dynamics is the acceptance rate. At
zero temperature, an adiabatic approximation reveals that the relaxational
behavior of the model corresponds to that of a single harmonic oscillator with
an effective renormalized mass.Comment: Uuencoded file including: REVTEX (33 pages) and 7 figures
(PostScript)
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