5,507 research outputs found

    Self-sustained current oscillations in the kinetic theory of semiconductor superlattices

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    We present the first numerical solutions of a kinetic theory description of self-sustained current oscillations in n-doped semiconductor superlattices. The governing equation is a single-miniband Boltzmann-Poisson transport equation with a BGK (Bhatnagar-Gross-Krook) collision term. Appropriate boundary conditions for the distribution function describe electron injection in the contact regions. These conditions seamlessly become Ohm's law at the injecting contact and the zero charge boundary condition at the receiving contact when integrated over the wave vector. The time-dependent model is numerically solved for the distribution function by using the deterministic Weighted Particle Method. Numerical simulations are used to ascertain the convergence of the method. The numerical results confirm the validity of the Chapman-Enskog perturbation method used previously to derive generalized drift-diffusion equations for high electric fields because they agree very well with numerical solutions thereof.Comment: 26 pages, 16 figures, to appear in J. Comput. Phy

    Chaos in resonant-tunneling superlattices

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    Spatio-temporal chaos is predicted to occur in n-doped semiconductor superlattices with sequential resonant tunneling as their main charge transport mechanism. Under dc voltage bias, undamped time-dependent oscillations of the current (due to the motion and recycling of electric field domain walls) have been observed in recent experiments. Chaos is the result of forcing this natural oscillation by means of an appropriate external microwave signal.Comment: 3 pages, LaTex, RevTex, 3 uuencoded figures (1.2M) are available upon request from [email protected], to appear in Phys.Rev.

    Chaotic motion of space charge wavefronts in semiconductors under time-independent voltage bias

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    A standard drift-diffusion model of space charge wave propagation in semiconductors has been studied numerically and analytically under dc voltage bias. For sufficiently long samples, appropriate contact resistivity and applied voltage - such that the sample is biased in a regime of negative differential resistance - we find chaos in the propagation of nonlinear fronts (charge monopoles of alternating sign) of electric field. The chaos is always low-dimensional, but has a complex spatial structure; this behavior can be interpreted using a finite dimensional asymptotic model in which the front (charge monopole) positions and the electrical current are the only dynamical variables.Comment: 12 pages, 8 figure

    A hybrid model for chaotic front dynamics: From semiconductors to water tanks

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    We present a general method for studying front propagation in nonlinear systems with a global constraint in the language of hybrid tank models. The method is illustrated in the case of semiconductor superlattices, where the dynamics of the electron accumulation and depletion fronts shows complex spatio-temporal patterns, including chaos. We show that this behavior may be elegantly explained by a tank model, for which analytical results on the emergence of chaos are available. In particular, for the case of three tanks the bifurcation scenario is characterized by a modified version of the one-dimensional iterated tent-map.Comment: 4 pages, 4 figure

    Stationary states and phase diagram for a model of the Gunn effect under realistic boundary conditions

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    A general formulation of boundary conditions for semiconductor-metal contacts follows from a phenomenological procedure sketched here. The resulting boundary conditions, which incorporate only physically well-defined parameters, are used to study the classical unipolar drift-diffusion model for the Gunn effect. The analysis of its stationary solutions reveals the presence of bistability and hysteresis for a certain range of contact parameters. Several types of Gunn effect are predicted to occur in the model, when no stable stationary solution exists, depending on the value of the parameters of the injecting contact appearing in the boundary condition. In this way, the critical role played by contacts in the Gunn effect is clearly stablished.Comment: 10 pages, 6 Post-Script figure

    Chaotic dynamics of electric-field domains in periodically driven superlattices

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    Self-sustained time-dependent current oscillations under dc voltage bias have been observed in recent experiments on n-doped semiconductor superlattices with sequential resonant tunneling. The current oscillations are caused by the motion and recycling of the domain wall separating low- and high-electric- field regions of the superlattice, as the analysis of a discrete drift model shows and experimental evidence supports. Numerical simulation shows that different nonlinear dynamical regimes of the domain wall appear when an external microwave signal is superimposed on the dc bias and its driving frequency and driving amplitude vary. On the frequency - amplitude parameter plane, there are regions of entrainment and quasiperiodicity forming Arnol'd tongues. Chaos is demonstrated to appear at the boundaries of the tongues and in the regions where they overlap. Coexistence of up to four electric-field domains randomly nucleated in space is detected under ac+dc driving.Comment: 9 pages, LaTex, RevTex. 12 uuencoded figures (1.8M) should be requested by e-mail from the autho

    Generalized drift-diffusion model for miniband superlattices

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    A drift-diffusion model of miniband transport in strongly coupled superlattices is derived from the single-miniband Boltzmann-Poisson transport equation with a BGK (Bhatnagar-Gross-Krook) collision term. We use a consistent Chapman-Enskog method to analyze the hyperbolic limit, at which collision and electric field terms dominate the other terms in the Boltzmann equation. The reduced equation is of the drift-diffusion type, but it includes additional terms, and diffusion and drift do not obey the Einstein relation except in the limit of high temperatures.Comment: 4 pages, 3 figures, double-column revtex. To appear as RC in PR

    Dynamics of Electric Field Domains and Oscillations of the Photocurrent in a Simple Superlattice Model

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    A discrete model is introduced to account for the time-periodic oscillations of the photocurrent in a superlattice observed by Kwok et al, in an undoped 40 period AlAs/GaAs superlattice. Basic ingredients are an effective negative differential resistance due to the sequential resonant tunneling of the photoexcited carriers through the potential barriers, and a rate equation for the holes that incorporates photogeneration and recombination. The photoexciting laser acts as a damping factor ending the oscillations when its power is large enough. The model explains: (i) the known oscillatory static I-V characteristic curve through the formation of a domain wall connecting high and low electric field domains, and (ii) the photocurrent and photoluminescence time-dependent oscillations after the domain wall is formed. In our model, they arise from the combined motion of the wall and the shift of the values of the electric field at the domains. Up to a certain value of the photoexcitation, the non-uniform field profile with two domains turns out to be metastable: after the photocurrent oscillations have ceased, the field profile slowly relaxes toward the uniform stationary solution (which is reached on a much longer time scale). Multiple stability of stationary states and hysteresis are also found. An interpretation of the oscillations in the photoluminescence spectrum is also given.Comment: 34 pages, REVTeX 3.0, 10 figures upon request, MA/UC3M/07/9

    Closure of the Monte Carlo dynamical equations in the spherical Sherrington-Kirkpatrick model

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    We study the analytical solution of the Monte Carlo dynamics in the spherical Sherrington-Kirkpatrick model using the technique of the generating function. Explicit solutions for one-time observables (like the energy) and two-time observables (like the correlation and response function) are obtained. We show that the crucial quantity which governs the dynamics is the acceptance rate. At zero temperature, an adiabatic approximation reveals that the relaxational behavior of the model corresponds to that of a single harmonic oscillator with an effective renormalized mass.Comment: Uuencoded file including: REVTEX (33 pages) and 7 figures (PostScript)
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