69 research outputs found

    Fast simulation method for parameter reconstruction in optical metrology

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    A method for automatic computation of parameter derivatives of numerically computed light scattering signals is demonstrated. The finite-element based method is validated in a numerical convergence study, and it is applied to investigate the sensitivity of a scatterometric setup with respect to geometrical parameters of the scattering target. The method can significantly improve numerical performance of design optimization, parameter reconstruction, sensitivity analysis, and other applications

    Analytical modeling and 3D finite element simulation of line edge roughness in scatterometry

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    The influence of edge roughness in angle resolved scatterometry at periodically structured surfaces is investigated. A good description of the radiation interaction with structured surfaces is crucial for the understanding of optical imaging processes like, e.g. in photolithography. We compared an analytical 2D model and a numerical 3D simulation with respect to the characterization of 2D diffraction of a line grating involving structure roughness. The results show a remarkably high agreement. The diffraction intensities of a rough structure can therefore be estimated using the numerical simulation result of an undisturbed structure and an analytically derived correction function. This work allows to improve scatterometric results for the case of practically relevant 2D structures

    Development of a test setup for the characterization of an optical microscope for high precision length metrology applications

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    A test setup to qualify the performance of optical microscopes has been designed and optimized using FEM calculations to exhibit a minimal susceptibility to thermal and mechanical influences of the ambient environment. The alignment is performed using an alignment autocollimator and alignment targets. The data acquisition of the camera and the position sensors of the stage is synchronized. The short-term repeatability (1s) of the line position and -width measurement obtained with the integrated UV microscope are 1 nm and 0.2 nm respectively. In long-term measurements the maximum lateral and focus drift rate observed were 30- and 20 nm / hour respectively. The measured point spread function contained only radial symmetric optical aberrations. Using the Zernike-Nijboer theory including only the defocus and spherical aberrations, fit residuals were obtained that contain systematic deviations in the order of the noise level

    Comparison of far field characterisation of DOEs with a goniometric DUV-scatterometer and a CCD-based system

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    We have measured far field diffraction patterns of different diffractive optical elements at an illumination wavelength of 193 nm using a new type of goniometric DUV (deep ultraviolet) scatterometer, which has been developed and set up recently at the PTB, the national metrology institute of Germany. This system offers both a high dynamic range and angular resolution. The scatterometer is especially suitable to analyse weak background light like stray light and local variations of the diffraction patterns over the DOEs (diffractive optical element). The measurement results are compared with measurements using a CCD (charge-coupled device)-based imaging DOE measurement system from Carl Zeiss SMT. An excellent agreement is demonstrated

    Nano-structured transmissive spectral filter matrix based on guided-mode resonances

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    Background: In this work, a nanostructured guided-mode resonance filter matrix with high transmission efficiency and narrow bandwidth is demonstrated. The developed nano-filter arrays have various usages, e.g., combined with the CMOS image sensors to realize compact spectrometers for biomedical sensing applications. Methods: In order to optimize the filter performance, the spectral responses of filters with different structural parameters are carefully studied based on the variable-controlling method. A quality factor is carried out for quantitative characterization. Results: In this case, a high fill factor of 0.9 can strongly suppress sidebands, while buffer layer thickness can be adjusted to mainly control the bandwidth. The transmission peaks shift from 386 nm to 1060 nm with good linearity when periods vary from 220 nm to 720 nm. The incident angle dependence is simulated to be ~ 1.1 nm/degree in ±30° range. The filters are then fabricated and characterized. The results obtained from both simulations and experiments agree well, where the filters with the period of 352 nm exhibit simulated and measured transmission peaks of 564 nm and 536 nm, the FWHM of 13 nm and 17 nm, respectively. In terms of metal material, besides aluminum, silver is also investigated towards optimization of the transmission efficiency. Conclusion: The transmission spectra of designed filters have high transmission and low sideband; its peaks cover the whole visible and near infrared range. These characteristics allow them to have the possibility to be integrated into image sensors for spectrometer applications

    Scatterometry reference standards to improve tool matching and traceability in lithographical nanomanufacturing

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    High quality scatterometry standard samples have been developed to improve the tool matching between different scatterometry methods and tools as well as with high resolution microscopic methods such as scanning electron microscopy or atomic force microscopy and to support traceable and absolute scatterometric critical dimension metrology in lithographic nanomanufacturing. First samples based on one dimensional Si or on Si 3 N 4 grating targets have been manufactured and characterized for this purpose. The etched gratings have periods down to 50 nm and contain areas of reduced density to enable AFM measurements for comparison. Each sample contains additionally at least one large area scatterometry target suitable for grazing incidence small angle X ray scattering. We present the current design and the characterization of structure details and the grating quality based on AFM, optical, EUV and X Ray scatterometry as well as spectroscopic ellipsometry measurements. The final traceable calibration of these standards is currently performed by applying and combining different scatterometric as well as imaging calibration methods. We present first calibration results and discuss the final design and the aimed specifications of the standard samples to face the tough requirements for future technology nodes in lithography
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