58 research outputs found
Riemann-Langevin Particle Filtering in Track-Before-Detect
Track-before-detect (TBD) is a powerful approach that consists in providing
the tracker with sensor measurements directly without pre-detection. Due to the
measurement model non-linearities, online state estimation in TBD is most
commonly solved via particle filtering. Existing particle filters for TBD do
not incorporate measurement information in their proposal distribution. The
Langevin Monte Carlo (LMC) is a sampling method whose proposal is able to
exploit all available knowledge of the posterior (that is, both prior and
measurement information). This letter synthesizes recent advances in LMC-based
filtering to describe the Riemann-Langevin particle filter and introduces its
novel application to TBD. The benefits of our approach are illustrated in a
challenging low-noise scenario.Comment: Minor grammatical update
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
Exchange coupling is a key ingredient for spin-based quantum technologies
since it can be used to entangle spin qubits and create logical spin qubits.
However, the influence of the electronic valley degree of freedom in silicon on
exchange interactions is presently the subject of important open questions.
Here we investigate the influence of valleys on exchange in a coupled
donor/quantum dot system, a basic building block of recently proposed schemes
for robust quantum information processing. Using a scanning tunneling
microscope tip to position the quantum dot with sub-nm precision, we find a
near monotonic exchange characteristic where lattice-aperiodic modulations
associated with valley degrees of freedom comprise less than 2~\% of exchange.
From this we conclude that intravalley tunneling processes that preserve the
donor's and valley index are filtered out of the interaction
with the valley quantum dot, and that the and
intervalley processes where the electron valley index changes are weak.
Complemented by tight-binding calculations of exchange versus donor depth, the
demonstrated electrostatic tunability of donor/QD exchange can be used to
compensate the remaining intravalley oscillations to realise uniform
interactions in an array of highly coherent donor spins.Comment: 6 pages, 4 figures, 6 pages Supplemental Materia
Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion
Making use of droplet epitaxy, we systematically controlled the height of
self-assembled GaAs quantum dots by more than one order of magnitude. The
photoluminescence spectra of single quantum dots revealed the strong dependence
of the spectral linewidth on the dot height. Tall dots with a height of ~30 nm
showed broad spectral peaks with an average width as large as ~5 meV, but
shallow dots with a height of ~2 nm showed resolution-limited spectral lines
(<120 micro eV). The measured height dependence of the linewidths is in good
agreement with Stark coefficients calculated for the experimental shape
variation. We attribute the microscopic source of fluctuating electric fields
to the random motion of surface charges at the vacuum-semiconductor interface.
Our results offer guidelines for creating frequency-locked photon sources,
which will serve as key devices for long-distance quantum key distribution.Comment: 6 pages, 6 figures; updated figs and their description
Shape control of QDs studied by cross-sectional scanning tunneling microscopy
In this cross-sectional scanning tunneling microscopy study we investigated
various techniques to control the shape of self-assembled quantum dots (QDs)
and wetting layers (WLs). The result shows that application of an indium flush
during the growth of strained InGaAs/GaAs QD layers results in flattened QDs
and a reduced WL. The height of the QDs and WLs could be controlled by varying
the thickness of the first capping layer. Concerning the technique of antimony
capping we show that the surfactant properties of Sb result in the preservation
of the shape of strained InAs/InP QDs during overgrowth. This could be achieved
by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer
prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was
investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show
that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick,
and that minor intermixing of Al with the QDs takes place.Comment: 7 pages, 10 figure
Shape control of QDs studied by cross-sectional scanning tunneling microscopy
In this cross-sectional scanning tunneling microscopy study we investigated
various techniques to control the shape of self-assembled quantum dots (QDs)
and wetting layers (WLs). The result shows that application of an indium flush
during the growth of strained InGaAs/GaAs QD layers results in flattened QDs
and a reduced WL. The height of the QDs and WLs could be controlled by varying
the thickness of the first capping layer. Concerning the technique of antimony
capping we show that the surfactant properties of Sb result in the preservation
of the shape of strained InAs/InP QDs during overgrowth. This could be achieved
by both a growth interrupt under Sb flux and capping with a thin GaAsSb layer
prior to overgrowth of the uncapped QDs. The technique of droplet epitaxy was
investigated by a structural analysis of strain free GaAs/AlGaAs QDs. We show
that the QDs have a Gaussian shape, that the WL is less than 1 bilayer thick,
and that minor intermixing of Al with the QDs takes place.Comment: 7 pages, 10 figure
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