2,845 research outputs found
A critical discussion of calculated modulated structures, Fermi surface nesting and phonon softening in magnetic shape memory alloys NiMn(Ga, Ge, Al) and CoMn(Ga, Ge)
A series of first principles calculations have been carried out in order to
discuss electronic structure, phonon dynamics, structural instabilities and the
nature of martensitic transformations of the Heusler alloys NiMn(Ga, Ge,
Al) and CoMn(Ga, Ge). The calculations show that besides electronic
pecularities like Fermi--surface nesting, hybridizing optical and acoustic
phonon modes are important for the stabilization of the modulated martensitic
structures.Comment: 3 pages, 4 figures, JEMS-200
First-principles molecular-dynamics simulations for neutral p-chloranil and its radical anion
APS copyright is acknowledged url = {http://link.aps.org/doi/10.1103/PhysRevB.53.12112}International audienceThe neutral p -chloranil ~ 2,3,5,6-tetrachloro- p -benzoquinone ! and its radical anion have been extensively studied using the Car-Parrinello projector augmented wave method, which is an all-electron electronic structure method for first-principles molecular dynamics based on the local density approximation of density functional theory. Frequencies and eigenmodes are derived by fitting a system of harmonic oscillators to the molecular- dynamics trajectories. The dependence of the bond lengths and vibrational frequencies on the molecular ionicity is discussed, and the electron affinity, Coulomb repulsion, and the spin-splitting parameter of p -chloranil are also derived
Surface resonance of the (2Ă1) reconstructed lanthanum hexaboride (001)-cleavage plane : a combined STM and DFT study
We performed a combined study of the (001)-cleavage plane of lanthanum hexaboride (LaB6) using scanning tunneling microscopy and density-functional theory (DFT). Experimentally, we found a (2Ă1) reconstructed surface on a local scale. The reconstruction is only short-range ordered and tends to order perpendicularly to step edges. At larger distances from surface steps, the reconstruction evolves to a labyrinthlike pattern. These findings are supported by low-energy electron diffraction experiments. Slab calculations within the framework of DFT show that the atomic structure consists of parallel lanthanum chains on top of boron octahedra. Scanning tunneling spectroscopy shows a prominent spectral feature at â0.6eV. Using DFT, we identify this structure as a surface resonance of the (2Ă1) reconstructed LaB6 (100) surface which is dominated by boron dangling bond states and lanthanum d states
Polar phonons and intrinsic dielectric response of the ferromagnetic insulating spinel CdCrS from first principles
We have studied the dielectric properties of the ferromagnetic spinel
CdCrS from first principles. Zone-center phonons and Born effective
charges were calculated by frozen-phonon and Berry phase techniques within
LSDA+U. We find that all infrared-active phonons are quite stable within the
cubic space group. The calculated static dielectric constant agrees well with
previous measurements. These results suggest that the recently observed
anomalous dielectric behavior in CdCrS is not due to the softening of a
polar mode. We suggest further experiments to clarify this point
Ultrafast spin-nematic and ferroelectric phase transitions induced by femto-second light pulses
Optically-induced phase transitions of the manganite have been simulated using a model Hamiltonian, that
captures the dynamics of strongly correlated charge, orbital, lattice, and spin
degrees of freedom. Its parameters have been extracted from first-principles
calculations. Beyond a critical intensity of a femto-second light pulse, the
material undergoes ultra-fast and non-thermal magnetic phase transition from a
non-collinear to collinear antiferromagnetic phases. The light-pulse excites
selectively either a spin-nematic or a ferroelectric phase depending on the
light-polarization. The behavior can be traced to an optically induced
ferromagnetic coupling between Mn-trimers, i.e. polarons which are delocalized
over three Mn-sites. The polarization guides the polymerization of the
polaronic crystal into distinct patterns of ferromagnetic chains determining
the target phase.Comment: 6 pages, 4 figure
Bayesian Error Estimation in Density Functional Theory
We present a practical scheme for performing error estimates for Density
Functional Theory calculations. The approach which is based on ideas from
Bayesian statistics involves creating an ensemble of exchange-correlation
functionals by comparing with an experimental database of binding energies for
molecules and solids. Fluctuations within the ensemble can then be used to
estimate errors relative to experiment on calculated quantities like binding
energies, bond lengths, and vibrational frequencies. It is demonstrated that
the error bars on energy differences may vary by orders of magnitude for
different systems in good agreement with existing experience.Comment: 5 pages, 3 figure
{\it Ab initio} calculations of magnetic structure and lattice dynamics of Fe/Pt multilayers
The magnetization distribution, its energetic characterization by the
interlayer coupling constants and lattice dynamics of (001)-oriented Fe/Pt
multilayers are investigated using density functional theory combined with the
direct method to determine phonon frequencies. It is found that ferromagnetic
order between consecutive Fe layers is favoured, with the enhanced magnetic
moments at the interface. The bilinear and biquadratic coupling coefficients
between Fe layers are shown to saturate fast with increasing thickness of
nonmagnetic Pt layers which separate them. The phonon calculations demonstrate
a rather strong dependence of partial iron phonon densities of states on the
actual position of Fe monolayer in the multilayer structure.Comment: 7 pages, 8 figure
A mixed ultrasoft/normconserved pseudopotential scheme
A variant of the Vanderbilt ultrasoft pseudopotential scheme, where the
normconservation is released for only one or a few angular channels, is
presented. Within this scheme some difficulties of the truly ultrasoft
pseudopotentials are overcome without sacrificing the pseudopotential softness.
i) Ghost states are easily avoided without including semicore shells. ii) The
ultrasoft pseudo-charge-augmentation functions can be made more soft. iii) The
number of nonlocal operators is reduced. The scheme will be most useful for
transition metals, and the feasibility and accuracy of the scheme is
demonstrated for the 4d transition metal rhodium.Comment: 4 pages, 2 figure
First-principles study of spontaneous polarization in multiferroic BiFeO
The ground-state structural and electronic properties of ferroelectric
BiFeO are calculated using density functional theory within the local
spin-density approximation and the LSDA+U method. The crystal structure is
computed to be rhombohedral with space group , and the electronic
structure is found to be insulating and antiferromagnetic, both in excellent
agreement with available experiments. A large ferroelectric polarization of
90-100 C/cm is predicted, consistent with the large atomic
displacements in the ferroelectric phase and with recent experimental reports,
but differing by an order of magnitude from early experiments. One possible
explanation is that the latter may have suffered from large leakage currents.
However both past and contemporary measurements are shown to be consistent with
the modern theory of polarization, suggesting that the range of reported
polarizations may instead correspond to distinct switching paths in structural
space. Modern measurements on well-characterized bulk samples are required to
confirm this interpretation.Comment: (9 pages, 5 figures, 5 tables
The interface between silicon and a high-k oxide
The ability to follow Moore's Law has been the basis of the tremendous
success of the semiconductor industry in the past decades. To date, the
greatest challenge for device scaling is the required replacement of silicon
dioxide-based gate oxides by high-k oxides in transistors. Around 2010 high-k
oxides are required to have an atomically defined interface with silicon
without any interfacial SiO2 layer. The first clean interface between silicon
and a high-K oxide has been demonstrated by McKee et al. Nevertheless, the
interfacial structure is still under debate. Here we report on first-principles
calculations of the formation of the interface between silicon and SrTiO3 and
its atomic structure. Based on insights into how the chemical environment
affects the interface, a way to engineer seemingly intangible electrical
properties to meet technological requirements is outlined. The interface
structure and its chemistry provide guidance for the selection process of other
high-k gate oxides and for controlling their growth. Our study also shows that
atomic control of the interfacial structure can dramatically improve the
electronic properties of the interface. The interface presented here serves as
a model for a variety of other interfaces between high-k oxides and silicon.Comment: 10 pages, 2 figures (one color
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