Experiments Participation Act:Know what works for whom

In recent years (1 October 2017 - 31 December 2019), six municipalities have conducted experiments in the assistance under the Temporary Decree Experiments Participation Act. The aim was to improve the implementation of the Participation Act through less control and coercion and more room for own direction, extra guidance and customization. The municipalities have asked the research institutes to scientifically investigate the results of these experiments. In order to be able to compare, the researchers used the same questionnaire in all six municipalities, the same outcome measures were used and the analysis model is also the same. However, because the experiments are designed at the municipal level, the differences between the municipalities and the experiments implemented are too big to really be able to combine the data. For a complete comparison and interpretation of the six experiments, we refer to the local final reports. The experiments, however, each individually, but above all in conjunction, provide relevant information for (future) policy that can fuel the discussion about the future of social security in the Netherlands. That is why we decided to write this joint semi-trailer to provide an initial insight into the broader outcomes on a selection of outcome measures. After a brief summary of the conclusions, we will discuss the various experiments and some important outcome measures in more detail

Conductivity and hall-effect characterization of highly resistive molecular-beam epitaxial GaN layers

Highly resistive molecular beam epitaxial GaN layers are characterized by temperature dependent conductivity and Hall effect measurements. Seven n-type GaN samples with room temperature layer resistivity ranging between 8 and 4.2x10(6) Omega cm are used in this study. The experimental data are analyzed by considering various transport models such as band and hopping conduction, scattering on charged dislocations and grain boundaries controlled transport. The same defect level of 0.23 eV, attributed to nitrogen vacancy, is found for layers with rho (300)less than or equal to3.7x10(3) Omega cm. The Hall mobility for two lower resistivity layers is influenced mainly by phonon scattering (mu (H)similar toT(x), x=-1.4). However, higher resistivity layers show positive mobility power, x=0.5-0.9, which can be explained by dominating scattering on charged dislocations. Properties of layers with the highest resistivity (1x10(5) and 4.2x10(6) Omega cm) and extremely low Hall mobility (6 and <0.1 cm(2) V-1 s(-1)) are consistent with grain boundary controlled transport. The barrier height between grains of 0.11 eV and an average grain size of 200 nm are found. Neither nearest-neighbor or variable range single phonon hopping nor multiphonon hopping can be clearly attributed to the conduction of the layers investigated. (C) 2000 American Institute of Physics. [S0021-8979(00)03923-2]

Conductivity and hall-effect in highly resistive GaN layers

Highly resistive GaN layers grown by molecular beam epitaxy are characterized by temperature dependent conductivity and Hall effect measurements. Samples with rho(300) congruent to 3 x 10(3) Ohm cm show room temperature Hall mobility of 22 and 35 cm(2) V-1 s(-1) and have a temperature dependence mu(H) similar to T-x with x = 0.9 and 0.5. This is in contradiction to a sample with rho(300) congruent to 32 Ohm cm which has a room temperature mobility of 310 cm(2) V-1 s(-1) and a mu(H) similar to T-x with x = -1.4. The same activation energy of 0.23 eV, attributed to donor-like defects, is found for all three samples investigated. Temperature dependent conductivity data can be reasonably fitted considering band conduction. The presence of various hopping mechanisms is discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)02825-4]