Universality of local weak interactions and its application for interferometric alignment

The modification of the effect of interactions of a particle as a function of its pre- and postselected states is analyzed theoretically and experimentally. The universality property of this modification in the case of local interactions of a spatially pre- and postselected particle has been found. It allowed to define an operational approach for characterization of the presence of a quantum particle in a particular place: the way it modifies the effect of local interactions. The experiment demonstrating this universality property provides an efficient interferometric alignment method, in which the beam on a single detector throughout one phase scan yields all misalignment parameters.Comment: 12 pages, 7 figure

Prediction of adverse perinatal outcome by fetal biometry: comparison of customized and populationâ based standards

ObjectiveTo compare the predictive performance of estimated fetal weight (EFW) percentiles, according to eight growth standards, to detect fetuses at risk for adverse perinatal outcome.MethodsThis was a retrospective cohort study of 3437 Africanâ American women. Populationâ based (Hadlock, INTERGROWTHâ 21st, World Health Organization (WHO), Fetal Medicine Foundation (FMF)), ethnicityâ specific (Eunice Kennedy Shriver National Institute of Child Health and Human Development (NICHD)), customized (Gestationâ Related Optimal Weight (GROW)) and Africanâ American customized (Perinatology Research Branch (PRB)/NICHD) growth standards were used to calculate EFW percentiles from the last available scan prior to delivery. Prediction performance indices and relative risk (RR) were calculated for EFW â 90th percentiles, according to each standard, for individual and composite adverse perinatal outcomes. Sensitivity at a fixed (10%) falseâ positive rate (FPR) and partial (FPR â 90th percentile were also at risk for any adverse perinatal outcome according to the INTERGROWTHâ 21st (RRâ =â 1.4; 95%â CI, 1.0â 1.9) and Hadlock (RRâ =â 1.7; 95%â CI, 1.1â 2.6) standards, many times fewer cases (2â 5â fold lower sensitivity) were detected by using EFW >â 90th percentile, rather than EFW â 90th percentile were at increased risk of adverse perinatal outcomes according to all or some of the eight growth standards, respectively. The RR of a composite adverse perinatal outcome in pregnancies with EFW <â 10th percentile was higher for the mostâ stringent (NICHD) compared with the leastâ stringent (FMF) standard. The results of the complementary analysis of AUC suggest slightly improved detection of adverse perinatal outcome by more recent populationâ based (INTERGROWTHâ 21st) and customized (PRB/NICHD) standards compared with the Hadlock and FMF standards. Published 2019. This article is a U.S. Government work and is in the public domain in the USA.Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/153734/1/uog20299.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/153734/2/uog20299_am.pd

Study of Rashba Spin-Orbit Field at LaAlO3/SrTiO3 Heterointerfaces

Oxide interfaces such as LaAlO3/SrTiO3 (LAO/STO) are interesting platforms for the investigation of ???spin-orbitronics??? because of their strongly coupled spin and orbital degrees of freedom due to the inversion asymmetry of the structure. In this investigation, we demonstrate a tunable Rashba spin-orbit field at the LAO/STO interface via the application of an external gate electric field. The strength of the Rashba field was indirectly estimated by measuring the planar angle dependence of the anisotropic magnetoresistance (AMR). The asymmetry of the planar AMR between ?? = 0 and ?? indicates the existence of Rashba spin-orbit fields, which are tunable by adjusting the current density and gate electric field. From the AMR measurements, the effective Rashba field exhibits up to 4 T for the application of an external back-gate voltage of 30 V. This controllable and relatively high Rashba field suggests that the LAO/STO is an attractive 2-D interface for potential spin-orbitronic applications, such as spin-charge converters, spin-FETs, and spin-orbit torque devices