The Interplay of Water Spreading, Evaporation and Imbibition at Nanoporous Silicon Surfaces

When a droplet is deposited on a porous substrate, three simultaneous processes take place: spreading at the surface, evaporation, and imbibition into the porous medium

Halide perovskite high-k field-effect transistors with dynamically reconfigurable ambipolarity

International audienceDespite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. These results elucidate the path for achieving gate modulation in perovskite thin-films and provide a platform to understand the interplay between the perovskite structure, and external stimuli such as photons, fields and functional substrates, which will lead to novel and emergent properties