Characterization of CuInTe2 thin films prepared by flash evaporation

peer reviewedThin films of CuInTe2 were grown by flash evaporation. The influence of the substrate temperature Ts during film deposition on the properties of the thin films was examined. CuInTe2 films were structurally characterized by the grazing incidence x-ray diffraction (GIXD) technique. Investigation by this technique demonstrates that the surface of thin films of CuInTe2 prepared by flash vaporation at Ts > 100 °C exhibits the chalcopyrite structure with additional binary compounds in the surface. However, in the volume the films exhibit the chalcopyrite structure only; no foreign phases were observed. X-ray reflectometry was utilized to evaluate the critical reflection angle bc of CuInTe2 (bCuInTe2 c 0.32°) which permitted us to calculate the density of the films to be 6 g cm−3. The evaporated films were p type and the films deposited at Ts = 100 °C had a resistivity in the range 0.3–2 cm. From optical measurements we have determined the optical energy gap Eg 0.94 eV and the effective reduced mass m*r 0.07me

Angle dependence and defect production in metal-on-metal cluster deposition on surfaces

We use molecular dynamics to analyze the dependence on the impact angle of the distribution of defects originated by the deposition of a Ag/sub 19/ cluster on Pd(100) at initial kinetic energies 0.1, 2, 20 and 95 eV. For increasing energy the cluster undergoes a transition from a multi-layered adsorbed structure to a two-dimensional one. Implantation of Ag atoms and promotion of Pd substrate atoms is common to all energies and angles and, for a given initial total kinetic energy, it increases with decreasing impact angle

Low energy impact of silver atoms on Pd(100): comparison between helium scattering and microscopic scale simulation results

Molecular dynamics simulations of the impact of Ag atoms at low energies (20 eV and 95 eV in the direction perpendicular to the surface) on Pd(100) are performed using embedded atom (EAM) potentials. The results are compared with recent helium scattering data relative to the impact of Ag/sub 1//sup +/ ions on a Pd(100) surface. Overall, the simulation results are in favorable agreement with the experiments and allow the outcome of the collision to be described in terms of a defect population consisting of the impinging Ag atom, Pd adatoms and substrate vacancies

Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by X-ray photoelectron spectroscopy

The interface between near stoichiometric hydrogenated amorphous silicon nitride (a-SiNx :H) deposited on hydrogenated amorphous silicon (a-Si:H) is studied using x-ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a-SiNx :H overlayers of about 40 Å thickness which is typical of the thicknesses used for well and barrier layers in superlattices and quantum well structures. Within the instrument’s resolution, subnitride components constitute less than 1% of the interface bonds. It is therefore concluded that the interface is atomically abrupt