Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode

WOS: 000492443000014The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the film were determined with transmission measurement. Device characterization of In/GZO/Si/Al diode were done with the analysis of temperature dependent current voltage (I-V) measurement. The current conduction mechanism was investigated with the Thermionic Emission (TE) method. The deviation from the pure TE method was observed and this deviation was analyzed under the assumption of Gaussian Distribution (GD) of barrier height (TE emission with GD). The mean standard deviation and zero bias barrier height were calculated as 0.0268 (about %3) and 1.239 eV, respectively. Richardson constant was found to be as 115.42 A/cm(2) K-2 using the modified Richardson plot. In addition, series resistance R-s was obtained using Cheung's function. Finally, the interface state densities D-it were determined by using the forward bias I-V results

Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes

WOS: 000458625200001Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (Phi(B0)) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung's theoretical approach, a linear correlation between Phi(B0) and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A*). As a result, A* was calculated approximately as 120.6 A cm(-2) K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R-s) by estimating from Cheng's function and density of surface states (N-ss) by taking the bias dependence of effective barrier height, were discussed

Magnetotransport study on AllnN/(GaN)/AIN/GaN heterostructures

Cataloged from PDF version of article.We report the effect of a thin GaN (2?nm) interlayer on the magnetotransport properties of AlInN/AlN/GaN-based heterostructures. Two samples were prepared (Sample A: AlInN/AlN/GaN and sample B: AlInN/GaN/AlN/GaN). Van der Pauw and Hall measurements were performed in the 1.9300?K temperature range. While the Hall mobilities were similar at room temperature (RT), sample B had nearly twice as large Hall mobility as sample A at the lowest temperature; 679 and 889?cm2/Vs at RT and 1460 and 3082?cm2/Vs at 1.9?K for samples A and B. At 1.910?K, the longitudinal magnetoresistance was measured up to 9?T, in turn revealing Shubnikovde Haas (SdH) oscillations. The carrier concentration, effective mass and quantum mobility of the two-dimensional electron gas (2DEG) were determined from SdH oscillations. At 1.9?K, the 2DEG concentration of sample B was nearly seven times larger than of sample A (1.67 x 10(13)/cm2 vs. 0.24 x 10(13)/cm2). On the contrary, the quantum mobility was changed adversely nearly three times (sample B 2500?cm2/Vs and sample A 970?cm2/Vs). The increase of the 2DEG concentration was attributed to the existence of the GaN interlayer, which has strengthened the spontaneous polarization difference between the AlInN and GaN layers of the heterostructure. Hence, the stronger electric field at the 2DEG region bent the conduction band profile downwards and consequently the quantum mobility decreased due to the increased interface roughness scattering

Novel VLDLR microdeletion identified in two Turkish siblings with pachygyria and pontocerebellar atrophy

Congenital ataxia with cerebellar hypoplasia is a heterogeneous group of disorders that presents with motor disability, hypotonia, incoordination, and impaired motor development. Among these, disequilibrium syndrome describes a constellation of findings including nonprogressive cerebellar ataxia, mental retardation, and cerebellar hypoplasia following an autosomal recessive pattern of inheritance and can be caused by mutations in the Very Low Density Lipoprotein Receptor (VLDLR). Interestingly, while the majority of patients with VLDLassociated cerebellar hypoplasia in the literature use bipedal gait, the previously reported patients of Turkish decent have demonstrated similar neurological sequelae, but rely on quadrupedal gait. We present a consanguinous Turkish family with two siblings with cerebellar atrophy, predominantly frontal pachygyria and ataxic bipedal gait, who were found to have a novel homozygous deletion in the VLDLR gene identified by using high-density single nucleotide polymorphism microarrays for homozygosity mapping and identification of CNVs within these regions. Discovery of disease causing homozygous deletions in the present Turkish family capable of maintaining bipedal movement exemplifies the phenotypic heterogeneity of VLDLRassociated cerebellar hypoplasia and ataxia. © Springer-Verlag 2010

DNaseI Hypersensitivity and Ultraconservation Reveal Novel, Interdependent Long-Range Enhancers at the Complex Pax6 Cis-Regulatory Region

The PAX6 gene plays a crucial role in development of the eye, brain, olfactory system and endocrine pancreas. Consistent with its pleiotropic role the gene exhibits a complex developmental expression pattern which is subject to strict spatial, temporal and quantitative regulation. Control of expression depends on a large array of cis-elements residing in an extended genomic domain around the coding region of the gene. The minimal essential region required for proper regulation of this complex locus has been defined through analysis of human aniridia-associated breakpoints and YAC transgenic rescue studies of the mouse smalleye mutant. We have carried out a systematic DNase I hypersensitive site (HS) analysis across 200 kb of this critical region of mouse chromosome 2E3 to identify putative regulatory elements. Mapping the identified HSs onto a percent identity plot (PIP) shows many HSs correspond to recognisable genomic features such as evolutionarily conserved sequences, CpG islands and retrotransposon derived repeats. We then focussed on a region previously shown to contain essential long range cis-regulatory information, the Pax6 downstream regulatory region (DRR), allowing comparison of mouse HS data with previous human HS data for this region. Reporter transgenic mice for two of the HS sites, HS5 and HS6, show that they function as tissue specific regulatory elements. In addition we have characterised enhancer activity of an ultra-conserved cis-regulatory region located near Pax6, termed E60. All three cis-elements exhibit multiple spatio-temporal activities in the embryo that overlap between themselves and other elements in the locus. Using a deletion set of YAC reporter transgenic mice we demonstrate functional interdependence of the elements. Finally, we use the HS6 enhancer as a marker for the migration of precerebellar neuro-epithelium cells to the hindbrain precerebellar nuclei along the posterior and anterior extramural streams allowing visualisation of migratory defects in both pathways in Pax6(Sey/Sey) mice

Breakpoint mapping of 13 large parkin deletions/duplications reveals an exon 4 deletion and an exon 7 duplication as founder mutations

Early-onset Parkinson’s disease (EOPD) has been associated with recessive mutations in parkin (PARK2). About half of the mutations found in parkin are genomic rearrangements, i.e., large deletions or duplications. Although many different rearrangements have been found in parkin before, the exact breakpoints involving these rearrangements are rarely mapped. In the present study, the exact breakpoints of 13 different parkin deletions/duplications, detected in 13 patients out of a total screened sample of 116 EOPD patients using Multiple Ligation Probe Amplification (MLPA) analysis, were mapped using real time quantitative polymerase chain reaction (PCR), long-range PCR and sequence analysis. Deletion/duplication-specific PCR tests were developed as a rapid and low cost tool to confirm MLPA results and to test family members or patients with similar parkin deletions/duplications. Besides several different deletions, an exon 3 deletion, an exon 4 deletion and an exon 7 duplication were found in multiple families. Haplotype analysis in four families showed that a common haplotype of 1.2 Mb could be distinguished for the exon 7 duplication and a common haplotype of 6.3 Mb for the deletion of exon 4. These findings suggest common founder effects for distinct large rearrangements in parkin

INVESTIGATION ON DEVICE CHARACTERISTICS OF n-CdS/p-Ag(Ga-In)Te-2 HETEROJUNCTION DIODE

WOS: 000439176500014This work indicates the device properties of polycrystalline p-AgGaInTe2 (AGIT) thin films deposited on bare and ITO-coated glass substrates with thermal evaporation technique. Device characteristics of n-CdS/p-AGIT heterostructure have been analyzed in terms of current-voltage (I-V) for different temperatures and capacitance-voltage (C-V) measurements for different frequencies, respectively. The series and shunt resistances were determined from the analysis of parasitic resistance for high forward and reverse bias voltages, respectively. The ideality factors were evaluated from I-V variation at each sample temperature as lying in between 2.51 and 3.25. The barrier height was around 0.79 eV at room temperature. For low bias region, the variation in the diode parameters due to the sample temperature exhibited the thermionic emission with T-0 anomaly, whereas space-charge-limited current analysis was also found to be pre-dominant carrier transport mechanism for this heterostructure. From C-V measurements, the obtained built-in potential and series resistances were found to be in good agreement with I-V results

Optical and electrical characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films

WOS: 000412787200005In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline thin films were investigated. They were deposited on soda lime glass substrates with the evaporation of pure elemental sources by using physical thermal evaporation technique at 200 degrees C substrate temperature. The thin films were characterized firstly in as-grown form, and then annealed under the nitrogen environment to deduce the effects of annealing on the optical and electrical properties of the deposited thin films related to their structural changes. In fact, these material properties of the CAIS thin films were studied by carrying out transmission, Hall Effect, and temperature dependent dark- and photo-conductivity measurements as a function of annealing temperature. From the optical analysis, the band gap energies were found between 1.44 and 1.51 eV for the as-grown and annealed films, respectively. The analysis of electrical conductivity showed that electrical properties of the films were dependent on the variable range hopping and thermionic emission conduction mechanisms at low temperature region and above the room temperature, respectively. Under different illumination intensities, the photo-conductivity properties of CAIS film samples were analyzed under the consideration of two-center model. (C) 2017 Elsevier B.V. All rights reserved

Deposition of CZTSe thin films and illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure

WOS: 000401042300042Characterization of Cu2ZnSnSe4 (CZTSe) thin films deposited by thermal evaporation sequentially from the pure elemental sources and in-situ post annealing was carried out at 400 C under Se evaporation atmosphere. Another annealing process was applied in nitrogen atmosphere at 450 degrees C to get poly-crystalline monophase CZTSe film structure. XRD analysis together with Raman spectroscopy was used to determine the structural properties. Spectral optical absorption coefficient evaluated from transmission data showed the band gap value of 1.49 eV for annealed film. Electrical measurements indicated that CZTSe thin films have p-type semiconductor behavior with the carrier density and mobility values of 10(-19) cm(-3) and 0.70 cm(2)/(V.s). Illumination effects on the device properties of Ag/n-Si/p-CZTSe/In heterostructure were investigated by analyzing current-voltage(I-V) and frequency dependent capacitance-voltage(C-V) data. Under the illumination, Ag/n-Si/p-CZTSe/In heterostructure showed photodiode behavior having V-oc value of 100 mV and I-sc value of 27.5 mu A. With the illumination, series resistances (R-s), diode ideality factor (n) and barrier height (Phi(b)) decreased and shunt resistance (R-sh) increased. Capacitance value at lower frequency decreased due to the illumination effect. (C) 2017 Elsevier B.V. All rights reserved