Achieving higher photoabsorption than group III-V semiconductors in silicon using photon-trapping surface structures

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing photon-trapping surface structures to show a prodigious improvement of photoabsorption in one-micrometer-thin silicon, surpassing the inherent absorption efficiency of gallium arsenide for a broad spectrum. The photon-trapping structures allow the bending of normally incident light by almost ninety degrees to transform into laterally propagating modes along the silicon plane. Consequently, the propagation length of light increases, contributing to more than an order of magnitude improvement in absorption efficiency in photodetectors. This high absorption phenomenon is explained by FDTD analysis, where we show an enhanced photon density of states while substantially reducing the optical group velocity of light compared to silicon without photon-trapping structures, leading to significantly enhanced light-matter interactions. Our simulations also predict an enhanced absorption efficiency of photodetectors designed using 30 and 100-nanometer silicon thin films that are compatible with CMOS electronics. Despite a very thin absorption layer, such photon-trapping structures can enable high-efficiency and high-speed photodetectors needed in ultra-fast computer networks, data communication, and imaging systems with the potential to revolutionize on-chip logic and optoelectronic integration.Comment: 24 pages, 4 figure

Albiglutide and cardiovascular outcomes in patients with type 2 diabetes and cardiovascular disease (Harmony Outcomes): a double-blind, randomised placebo-controlled trial

Background: Glucagon-like peptide 1 receptor agonists differ in chemical structure, duration of action, and in their effects on clinical outcomes. The cardiovascular effects of once-weekly albiglutide in type 2 diabetes are unknown. We aimed to determine the safety and efficacy of albiglutide in preventing cardiovascular death, myocardial infarction, or stroke. Methods: We did a double-blind, randomised, placebo-controlled trial in 610 sites across 28 countries. We randomly assigned patients aged 40 years and older with type 2 diabetes and cardiovascular disease (at a 1:1 ratio) to groups that either received a subcutaneous injection of albiglutide (30–50 mg, based on glycaemic response and tolerability) or of a matched volume of placebo once a week, in addition to their standard care. Investigators used an interactive voice or web response system to obtain treatment assignment, and patients and all study investigators were masked to their treatment allocation. We hypothesised that albiglutide would be non-inferior to placebo for the primary outcome of the first occurrence of cardiovascular death, myocardial infarction, or stroke, which was assessed in the intention-to-treat population. If non-inferiority was confirmed by an upper limit of the 95% CI for a hazard ratio of less than 1·30, closed testing for superiority was prespecified. This study is registered with ClinicalTrials.gov, number NCT02465515. Findings: Patients were screened between July 1, 2015, and Nov 24, 2016. 10 793 patients were screened and 9463 participants were enrolled and randomly assigned to groups: 4731 patients were assigned to receive albiglutide and 4732 patients to receive placebo. On Nov 8, 2017, it was determined that 611 primary endpoints and a median follow-up of at least 1·5 years had accrued, and participants returned for a final visit and discontinuation from study treatment; the last patient visit was on March 12, 2018. These 9463 patients, the intention-to-treat population, were evaluated for a median duration of 1·6 years and were assessed for the primary outcome. The primary composite outcome occurred in 338 (7%) of 4731 patients at an incidence rate of 4·6 events per 100 person-years in the albiglutide group and in 428 (9%) of 4732 patients at an incidence rate of 5·9 events per 100 person-years in the placebo group (hazard ratio 0·78, 95% CI 0·68–0·90), which indicated that albiglutide was superior to placebo (p<0·0001 for non-inferiority; p=0·0006 for superiority). The incidence of acute pancreatitis (ten patients in the albiglutide group and seven patients in the placebo group), pancreatic cancer (six patients in the albiglutide group and five patients in the placebo group), medullary thyroid carcinoma (zero patients in both groups), and other serious adverse events did not differ between the two groups. There were three (<1%) deaths in the placebo group that were assessed by investigators, who were masked to study drug assignment, to be treatment-related and two (<1%) deaths in the albiglutide group. Interpretation: In patients with type 2 diabetes and cardiovascular disease, albiglutide was superior to placebo with respect to major adverse cardiovascular events. Evidence-based glucagon-like peptide 1 receptor agonists should therefore be considered as part of a comprehensive strategy to reduce the risk of cardiovascular events in patients with type 2 diabetes. Funding: GlaxoSmithKline

High-speed avalanche photodiodes for low light level detection

Extremely sensitive optical receivers operating at high bandwidth are critical for optical communications technologies and other emerging applications that require the detection of an extremely low number of photons. Light imaging, detection and ranging (LIDAR), quantum communications, biophotonics, medical imaging systems, and other emerging applications will require a new generation of photodetectors that can detect extremely low power levels and be mass manufacturable. Today, Avalanche Photodetectors (APDs) and Single Photon Avalanche Photodetectors (SPADs) are the only detectors that can meet those requirements, but their bandwidth, sensitivity, and noise limitation must be overcome.This thesis presents the development of new silicon and germanium-on-silicon-based APDs and SPADs with high speed and absorption efficiency at visible and near-infrared wavelengths. Through the modeling, fabrication, and characterization we show that the implementation of photonic nanostructures in photodetectors enhances their responsivity and gain by guiding the light parallel to its surface, greatly enhancing the interaction with the semiconductor material. These nanostructures also allow enhancing their time response by two methods: (i) use of thinner absorption layers to reduce the transit time of the photogenerated carriers, without sacrificing their absorption capabilities and (ii) reduction of junction capacitance by reducing the effective area of the device through the removal of material. This thesis also develops the concept of penetration depth engineering. We show that it is possible to guide photons to a critical depth in semiconductors and maximize the gain-bandwidth performance and absorption efficiency in avalanche-based photodetectors by integrating photon-trapping nanoholes. Our new Si APDs have shown superior amplification gain and speed compared to their conventional counterparts.The advantages of photon-trapping are exploited in Germanium (Ge) on Si photodetectors. Our Ge-on-Si PDs show enhanced absorption capabilities at the O (original band: 1260-1360 nm) and C (conventional band: 1530 nm to 1565 nm) optical wavelengths of bands and enable their use at longer wavelengths in the L band (long wavelength: 1565 nm to 1625 nm). These PDs with photon-trapping holes have the potential to be monolithically integrated with CMOS/BiCMOS ASICs and offer a promising solution for waveguide PDs required for Photonic Integrated Circuits (PICs). A new generation of APDS and SPADs are now designed with the implementation of appropriate doping profiles for high amplification, thin semiconductor layers for high speed, and the accurate design of micro/nanoholes for highly sensitive and ultrafast optical receivers

Design and Fabrication of High-Efficiency, Low-Power, and Low-Leakage Si-Avalanche Photodiodes for Low-Light Sensing.

Since the advent of impact ionization and its application in avalanche photodiodes (APD), numerous application goals have contributed to steady improvements over several decades. The characteristic high operating voltages and the need for thick absorber layers (π-layers) in the Si-APDs pose complicated design and operational challenges in complementary metal oxide semiconductor integration of APDs. In this work, we have designed a sub-10 V operable Si-APD and epitaxially grown the stack on a semiconductor-on-insulator substrate with a submicron thin π-layer, and we fabricated the devices with integrated photon-trapping microholes (PTMH) to enhance photon absorption. The fabricated APDs show a substantially low prebreakdown leakage current density of ∼50 nA/mm2. The devices exhibit a consistent ∼8.0 V breakdown voltage with a multiplication gain of 296.2 under 850 nm illumination wavelength. We report a ∼5× increase in the EQE at 850 nm by introducing the PTMH into the device. The enhancement in the EQE is evenly distributed across the entire wavelength range (640-1100 nm). The EQE of the devices without PTMH (flat devices) undergo a notable oscillation caused by the resonance at specific wavelengths and show a strong dependency on the angle of incidence. This characteristic dependency is significantly circumvented by introducing the PTMH into the APD. The devices exhibit a significantly low off-state power consumption of 0.41 μW/mm2 and stand fairly well against the state-of-the-art literature. Such high efficiency, low leakage, low breakdown voltage, and extremely low-power Si-APD can be easily incorporated into the existing CMOS foundry line and enable on-chip, high-speed, and low-photon count detection on a large scale

Modeling of nanohole silicon pin/nip photodetectors: Steady state and transient characteristics

Theory is proposed for nanohole siliconpin/nipphotodetector (PD) physics, promising devices in the future data communications and lidar applications. Photons and carriers have wavelengths of 1μm and 5 nm, respectively. We propose vertical nanoholes having 2D periodicity with a feature size of 1μm will produce photons slower than those in bulk silicon, but carriers are unchanged. Close comparison to experiments validates this view. First, we study steady state nanohole PD current as a function of illumination power, and results are attributed to the voltage drop partitions in the PD and electrodes. Nanohole PD voltage drop depends on illumination, but series resistance voltage drop does not, and this explains experiments well. Next, we study transient characteristics for the sudden termination of light illumination. Nanohole PDs are much faster than flat PDs, and this is because the former produces much less slow diffusion minority carriers. In fact, most photons have already been absorbed in thei-layer in nanohole PDs, resulting in much less diffusion minority carriers at the bottom highly doped layer. Why diffusion in PDs is slow and that in bipolar junction transistors is quick is discussed in appendix

Avalanche photodetectors with photon trapping structures for biomedical imaging applications.

Enhancing photon detection efficiency and time resolution in photodetectors in the entire visible range is critical to improve the image quality of time-of-flight (TOF)-based imaging systems and fluorescence lifetime imaging (FLIM). In this work, we evaluate the gain, detection efficiency, and timing performance of avalanche photodiodes (APD) with photon trapping nanostructures for photons with 450 nm and 850 nm wavelengths. At 850 nm wavelength, our photon trapping avalanche photodiodes showed 30 times higher gain, an increase from 16% to >60% enhanced absorption efficiency, and a 50% reduction in the full width at half maximum (FWHM) pulse response time close to the breakdown voltage. At 450 nm wavelength, the external quantum efficiency increased from 54% to 82%, while the gain was enhanced more than 20-fold. Therefore, silicon APDs with photon trapping structures exhibited a dramatic increase in absorption compared to control devices. Results suggest very thin devices with fast timing properties and high absorption between the near-ultraviolet and the near infrared region can be manufactured for high-speed applications in biomedical imaging. This study paves the way towards obtaining single photon detectors with photon trapping structures with gains above 106 for the entire visible range