Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques

Hydrogenated microcrystalline silicon (μc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow to assess critical deposition parameters for the fabrication of high quality material. A relation between low intrinsic stress of the deposited i-layer and better performing solar cell devices is identified. Significant solar cell device improvements were achieved based on these findings: high open circuit voltages above 520 mV and fill factors above 74% were obtained for 1 μm thick μc-Si:H single junction cells and a 1.2 cm2 micromorph device with 12.3% initial (Voc=1.33 V, FF=72.4%, Jsc=12.8 mA cm−2) and above 10.0% stabilized efficiencies

Silane plasma diagnostics for high-efficiency silicon heterojunction solar cells

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directly relate to the plasma conditions, especially on the silane depletion fraction. Good interface passivation is indeed obtained from highly-depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding Voc’s up to 727 mV and aperture efficiencies up to 20.7% on 4 cm2 cells

Optimization of high efficiency silicon heterojunction solar cells using silane-plasma diagnostics

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). Since the properties of materials deposited by PEVCD are directly linked to the plasma properties, plasma diagnostics are very useful tools to optimize such devices. A novel diagnostic has been developed to measure in-situ the molecular silane depletion fraction in the plasma during deposition. It is found that the silane depletion strongly depends on the process parameters, and appears to be a relevant parameter for the quality of the passivating layers. Good passivation is indeed obtained from highly depleted silane plasmas. Based on this, layers deposited in a large-area PECVD reactor working at very high frequency (40.68 MHz) were optimized for heterojunction solar cells. All other fabrication steps were also fully industry compatible, using sputtering for transparent conductive oxide layers and screenprinting for the front grid. The best 2 x 2 cm2 cell shows a high open-circuit voltage of 717 mV, yielding a conversion efficiency of 20.3% (aperture area). Keywords: Heterojunction, PECVD, High-Efficienc

Laser spectroscopy for breath analysis : towards clinical implementation

Detection and analysis of volatile compounds in exhaled breath represents an attractive tool for monitoring the metabolic status of a patient and disease diagnosis, since it is non-invasive and fast. Numerous studies have already demonstrated the benefit of breath analysis in clinical settings/applications and encouraged multidisciplinary research to reveal new insights regarding the origins, pathways, and pathophysiological roles of breath components. Many breath analysis methods are currently available to help explore these directions, ranging from mass spectrometry to laser-based spectroscopy and sensor arrays. This review presents an update of the current status of optical methods, using near and mid-infrared sources, for clinical breath gas analysis over the last decade and describes recent technological developments and their applications. The review includes: tunable diode laser absorption spectroscopy, cavity ring-down spectroscopy, integrated cavity output spectroscopy, cavity-enhanced absorption spectroscopy, photoacoustic spectroscopy, quartz-enhanced photoacoustic spectroscopy, and optical frequency comb spectroscopy. A SWOT analysis (strengths, weaknesses, opportunities, and threats) is presented that describes the laser-based techniques within the clinical framework of breath research and their appealing features for clinical use.Peer reviewe

Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

We clarify the difference between the SiH4 consumption efficiency eta and the SiH4 depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant polysilane and powder formation, eta is proportional to the film growth rate. Above a certain powder formation threshold, any additional amount of SiH4 consumed translates into increased powder formation rather than into a faster growing Si film. In order to discuss a zero-dimensional analytical model and a two-dimensional numerical model, we measure eta as a function of the radio frequency (RF) power density coupled into the plasma, the total gas flow rate, the input SiH4 concentration, and the reactor pressure. The adjunction of a small trimethylboron flow rate increases eta and reduces the formation of powder, while the adjunction of a small disilane flow rate decreases eta and favors the formation of powder. Unlike eta, D is a location-dependent quantity. It is related to the SiH4 concentration in the plasma c(p), and to the phase of the growing Si film, whether the substrate is glass or a c-Si wafer. In order to investigate transient effects due to the RF matching, the precoating of reactor walls, or the introduction of a purifier in the gas line, we measure the gas residence time and acquire time-resolved SiH4 density measurements throughout the ignition and the termination of a plasma. (c) 2015 AIP Publishing LLC

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material. (C) 2014 AIP Publishing LLC