Classification Of Nanopolymers

Nanopolymers with different structures, shapes, and functional forms have recently been prepared using several techniques. Nanopolymers are the most promising basic building blocks for mounting complex and simple hierarchical nanosystems. The applications of nanopolymers are extremely broad and polymer-based nanotechnologies are fast emerging. We propose a nanopolymer classification scheme based on self-assembled structures, non self-assembled structures, and on the number of dimensions in the nanometer range (nD). © 2008 IOP Publishing Ltd.1001Ikkala, O., Brinke Ten, G., (2004) Chem. Commu., p. 213

Properties Of Carbon Nanostructures Prepared By Polyaniline Carbonization

Nanometric sponge-like structures have been prepared from the carburization of polyaniline-(emeradine salt) using a rapid immersion in hot-filament system fed with carbon dioxide, ethyl alcohol and argon. Fiber-like fragments of width in the range of 20 - 40 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements suggested that benzenoid rings and amide were present in the carburized samples. Lowest threshold achieved for field emission was 23.5 V/μm. © 2007 IOP Publishing Ltd.6117174Bonard, J.M., Kind, H., Stöckli, T., Nilsson, L.O., (2001) Sol. State Electron., 45 (6), p. 893Journet, C., Bernier, P., (1998) Appl. Phys., 67 (1), p. 1Morell, G., Gonzlez-Berríos, A., Weiner, B.R., Gupta, S., (2006) J. Mater. Sci: Mater. Electron, 17 (6), p. 443Koeck, F.A.M., Zumer, M., Nemanic, V., Nemanich, R.J., (2006) Diam. Rel. Mater., 15 (4-8), p. 880Andreatta, A., Cao, Y., Chiang, J.C., Heger, A.J., (1988) Synth. Met., 26 (4), p. 383Konyushenko, E.N., Stejskal, J., Trchov, M., Hradil, J., Kovrov, J., Prokes, J., Cieslar, M., Sapurina, I., (2006) PolymerNastase, C., Nastase, F., Vaseashta, A., Stamatin, I., (2006) Prog. Sol. Sta. Chem., 34 (2-4), p. 181Mottaghittalab, V.B., Spinks, G.M., Wallace, G.G., (2006) Synth. Met.Nickels, P., Dittimer, W.U., Beyer, S., Kottahous, J.P., Simmel, F.C., (2004) Nanotech., 15 (11), p. 1524Zhang, M.Y., Kaner, R.B., (2004) J. Am. Chem. Soc., 126 (22), p. 7097Baibarac, M., Baltog, I., Lefrand, S., Mevellec, J.Y., Chauvet, O., (2003) Chem. Mater., 15 (21), p. 4149Quillard, S., Loaurn, G., Lefrant, S., MacDiamird, A.G., (1994) Phys. Rev., 50 (17), p. 12496Mammana, V.P., Santos, T.E.A., Mammana, A., Baranauskas, V., Ceragioli, H.J., Peterlevitz, A.C., (2002) Appl. Phys. Lett., 81 (18), p. 3470Baranauskas, V., Fontana, M., Ceragioli, H.J., Peterlevitz, A.C., (2004) Nanotech., 15 (10), p. 678Kurt Bonard, R.J.M., Karimi, A., (2001) Diam.Rel. Mater., 10 (11), p. 1962Gupta Weiner, S.B.R., Morell, G., (2002) Diam. Rel. Mater., 11 (3-6), p. 799Wu, K., Wang, E.G., Cao, Z.X., Wang, Z.L., Jiang, X., (2000) J. Appl. Phys., 88 (5), p. 2967Proffitt, S.S., Probert, S.J., Whitfield, M.D., Foord, J.S., Jackman, R.B., (1999) Diam. Rel. Mater., 8 (2-5), p. 76

Fabrication Of Smooth Diamond Films On Sio2 By The Addition Of Nitrogen To The Gas Feed In Hot-filament Chemical Vapor Deposition

The morphology of small roughness diamond films deposited onto thermally oxidized silicon substrates by a process of anisotropic crystalline growth induced by nitrogen in a hot-filament chemical vapor deposition (CVD) reactor was investigated. Square plates of low roughness were obtained on the top surface of the diamond films. Scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy indicated films made up of good quality. The films possessed a large number of defects due to substitutional nitrogen. Planar defects were created due to large amount of nitrogen introduced in the CVD process. Substitutional nitrogen provoked lateral vacancies that have a catalytic effect on the lateral rate of diamond growth.19410521056Angus, J.C., Hayman, C.C., (1988) Science, 241, p. 913Yarborough, W.A., Messier, R., (1990) Science, 241, p. 688Derjaguin, B.V., Fedoseev, D., (1977) Izd., , Nauka, Moscow, Chap. 4Tankala, K., DebRoy, T., (1992) J. Appl. Phys., 72, p. 712Okano, K., Koizumi, S., Silva, S.R.P., Amaratunga, G.A.J., (1996) Nature (London), 381, p. 140Liao, X.Z., Zhang, R.J., Lee, C.S., Tong Lee, S., Lam, Y.W., (1997) Diamond Relat. Mater., 6, p. 521Dos Santos Filho, S.G., Hasenack, C.M., Lopes, M.C.V., Baranauskas, V., (1995) Semicond. Sci. Technol., 10, p. 990Jin, S., Moustakas, T.D., (1994) Appl. Phys. Lett., 65, p. 403Locher, R., Wild, C., Herres, N., Behr, D., Koidl, P., (1996) Appl. Phys. Lett., 65, p. 759Walker, J.E., (1979) Rep. Prog. Phys., 42, p. 42Evans, T., Rainey, P., (1975) Proc. R. Soc. London, Ser. A, 344, p. 111Baranauskas, V., Li, B.B., Peterlevitz, A., Tosin, M.C., Durrant, S.F., (1999) J. Appl. Phys., 85, p. 7455Baranauskas, V., Peled, A., Trava-Airoldi, V.J., Lima, C.A.S., Doi, I., Corat, E.J., (1994) Appl. Surf. Sci., 79-80, p. 129Barros, R.C.M., Corat, E.J., Ferreira, N.G., Souza, T.M., Trava-Airoldi, V.J., Leite, N.F., Iha, K., (1996) Diamond Relat. Mater., 5, p. 1323Lang, A.R., (1964) Proc. Phys. Soc., 84, p. 871Sumida, N., Lang, A.R., (1988) Proc. R. Soc. London, Ser. A, 419, p. 235Bridon, P.R., Jones, R., (1993) Physica B, 185, p. 17

Field-emission Properties Of Sulphur Doped Nanocrystalline Diamonds

Nanostructured diamond doped with sulphur has been prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, carbon disulfide, hydrogen, and argon mixture. The reduction of diamond grains to the nanoscale is relevant to create a network of defective grain boundaries which may be n-type doped to facilitate the transport and injection of electrons to the diamond grains located at the vacuum interface, enhancing the electron field-emission properties of the samples. The downsizing was produced by secondary nucleation and defects induced by sulphur and argon atoms in the chemical vapour deposition surface reactions. Sulphur also acts as an n-type dopant of diamond. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains and the morphology, revealed by field electron scanning microscopy, shows that the grains are in the range of 10 to 30 nm. The lowest threshold achieved for field emission was 13.20 V/μm. © 2007 IOP Publishing Ltd.6116670Yang, A.T.S., Lay, J.Y., Wong, M.S., Cheng, C.L., (2002) J. Appl. Phys., 92 (4), p. 2133Mammana, V.P., Tea, S., Mammana, A., Baranauskas, V., Ceragioli, H.J., Peterlevitz, A.C., (2002) Appl. Phys. Lett., 81 (18), p. 3470Baranauskas, V., Fontana, M., Ceragioli, H.J., Peterlevitz, A.C., (2004) Nanotech., 15 (10), p. 678Gruen, D.M., (1998) MRS Bull., 9, p. 32Jin, B.M., Kim, C.C., (1997) Appl. Phys. A: Solid Surf., 65 (1), p. 53Himpsel, F.J., Knapp, J.A., Vanvechten, J.A., Eastman, P.E., (1979) Phys. Rev., 20 (2), p. 624Bandis, B., Pate, B.B., (1996) Appl. Phys Lett., 69 (3), p. 366Okano, K., Yamada, T., Suave, A., Koizumi, S., Pate, B.B., (1999) Appl. Surf. Sci., 146 (1-4), p. 274Kurt Bonard, R.J.M., Karimi, A., (2001) Diam. Rel. Mater., 10 (11), p. 1962Bonnot, A.M., Deldem, M., Beaugnon, M., Fournier T.schouler, M.C., Mermoux, M., (1999) Diam. Rel. Mater., 8 (2-5), p. 631Gruen, D.M., Liu, S., Krauss, A.R., Liuy, A., Luo, J., Foster, C.M., (1994) J. Vac. Sci. Technol., 12 (4), p. 1491Gupta Weiner, S.B.R., Morell, G., (2002) Diam. Rel. Mater., 11 (3-6), p. 799Gupta Weiner, S.B.R., Morell, G., (2005) J. Appl. Phys., 97, p. 094307Morell, G., Gonzlez-Berríos, A., Weiner, B.R., Gupta, S., (2006) J. Mater. Sci: Mater. Electron, 17 (6), p. 443Koeck, F.A.M., Zumer, M., Nemanic, V., Nemanich, R.J., (2006) Diam. Rel. Mater., 15 (4-8), p. 880Shroder Nemanich, R.E.R.J., Glass, J.T., (1990) Phys. Rev., 41 (6), p. 3738Birrell, J., Gerbi, J.E., Auciello, O., Gibson, J.M., Johnson, J., Carlisle, J.A., (2005) Diam. Rel. Mater., 14 (1), p. 86Ferrari, A.C., Robertson, J., (2001) Phys. Rev., 63, pp. 121405RWu, K., Wang, E.G., Cao, Z.X., Wang, Z.L., Jiang, X., (2000) J. Appl. Phys., 88 (5), p. 2967Proffitt, S.S., Probert, S.J., Whitfield, M.D., Foord, J.S., Jackman, R.B., (1999) Diam. Rel. Mater., 8 (2-5), p. 76

NUMERICAL-CALCULATIONS OF THE ELECTRICAL EFFECTS INDUCED BY STRUCTURAL IMPERFECTIONS ON MOS CAPACITORS

As the thickness of gate quality SiO2 is reduced, minor structural interface imperfections begin to play an important role in device performance and yield. To isolate the effects of a variety of such interface imperfections on electric field distribution within the SiO2 layer of biased metal oxide semiconductor capacitors, numerical calculations were carried out. The results indicate that strong electric field distortions may be expected for almost any interfacial defect configuration, being highest for metal precipitates. Technological consequences of the findings are also discussed.14161621162

Combined grazing-angle and normal-incidence reflectometry of absorbing media

We have studied the grazing-incidence differential-reflectance method for obtaining the dielectric function of absorbing media in terms of the derivatives R-p' and R-s' of the polarized light reflectances and found that it does not guarantee adequate accuracy for almost any values of the optical parameters. Therefore we modify that approach and describe what we believe is a novel method for the unambiguous determination of the optical constants n and k of a metal and other absorbing materials in terms of the ratio of the derivatives alpha = R-p'/R-s' at the grazing incidence and the normal incidence reflection coefficient R. Moreover, it is possible to express alpha through the logarithmic derivatives (1/R)R' in the vicinity of the grazing angle. The possibility of performing measurements at the unspecified angle without knowledge of the explicit value of this angle is an evident advantage of this technique. For the great majority of metals and semiconductors the relative errors in the optical constants are comparable to or less than the relative errors in the experimentally measured parameters. (C) 1999 Optical Society of America [S0740-3232(99)01302-2].16237137

Characterization Of Boron Doped Nanocrystalline Diamonds

Nanostructured diamond doped with boron was prepared using a hot-filament assisted chemical vapour deposition system fed with an ethyl alcohol, hydrogen and argon mixture. The reduction of the diamond grains to the nanoscale was produced by secondary nucleation and defects induced by argon and boron atoms via surface reactions during chemical vapour deposition. Raman measurements show that the samples are nanodiamonds embedded in a matrix of graphite and disordered carbon grains, while morphological investigations using field electron scanning microscopy show that the size of the grains ranges from 20 to 100 nm. The lowest threshold fields achieved were in the 1.6 to 2.4 V/μm range. © 2008 IOP Publishing Ltd.100PART 5Himpsel, F.J., Knapp, J.A., VanVechten, J.A., Eastman, P.E., (1979) Phys. Rev., 20 B, p. 624Bandis, B., Pate, B.B., (1996) Appl. Phys Lett., 69, p. 366Mammana, V.P., Santos, T.E.A., Mammana, A., Baranauskas, V., Ceragioli, H.J., Peterlevitz, A.C., (2002) Appl. Phys. Lett., 81, p. 3470Baranauskas, V., Fontana, M., Ceragioli, H.J., Peterlevitz, A.C., (2004) Nanotech., 15 (10), pp. S678Shroder, R.E., Nemanich, R.J., Glass, J.T., (1990) Phys. Rev., 41 B, p. 3738Ferrari, A.C., Robertson, J., (2001) Phys. Rev., 63 B. , 121405(R)Jiang, X., Frederick, C.K.Au., Lee, S.T., (2002) J. Appl. Phys., 92 (5), p. 2880Lee, Y.C., Lin, S.J., Lin, I.N., Cheng, H.F., (2005) J. Appl. Phys., 97, p. 05431

Measurement of the substitutional nitrogen activation energy in diamond films

We show that the electrical properties of nitrogen-doped nominally undoped polycrystalline chemical vapor deposited diamond films are modified by post-deposition heating in an oxidizing atmosphere. We found that the first heating cycle in air in the temperature range of 300-673 K decreased the graphitization content still present in the diamond surface and that after the second heating cycle the electrical resistance versus temperature curves became stabilized. Using a flow of argon with residues of oxygen over the surface of the sample during the heating cycles, the stabilization of the resistance-temperature dependence also occurred but only after the fourth heating cycle. The results suggest the existence of an oxidation mechanism of the nondiamond carbon atoms present at the diamond surface. After stabilization, the deep donor ionization energy was found to be E-d= 1.62+/-0.02 eV. All results brought together strongly suggest that this level is due to single nitrogen atoms that occupy substitutional lattice sites in diamond. (C) 1998 American Institute of Physics. [S0003-6951(98)01632-5].73681281

Characterization Of The Crotalus Durissus Terrificus Venom By Atomic Force Microscopy

A preliminary analysis of the morphology of crude CDT venom was performed using atomic force microscopy (AFM). As a result, a direct measurement of the forces between the surface of the venom crystals and a sharp probe tip was achieved.20413171321Azevedo Marques, M.M., Cupo, P., Coimbra, T.M., Hering, S.E., Rossi, M.A., Laure, C.J., (1985) Toxicon, 23, p. 631Sanchez, E.E., Soliz, L.A., Susana Ramirez, M., Perez, J.C., (2001) Toxicon, 39, p. 523Soares, A.M., Mancin, A.C., Cecchini, A.L., Arantes, E.C., Franca, S.C., Gutierrez, J.M., Giglio, J.R., (2001) Int. J. Biochem. Cell Biol., 33, p. 877Choumet, V., Lafaye, P., Demangel, C., Bon, C., Mazie, J.C., (1999) Biol. Chem., 380, p. 561Sanchez, S.A., Chen, Y., Muller, J.D., Gratton, E., Hazlett, T.L., (2001) Biochemistry, 40, p. 6903Sharma, S., Jabeen, T., Singh, J.K., Bredhorst, R., Vogel, C.W., Betzel, C., Singh, T.P., (2001) Acta Crystallogr., Sect. D: Biol. Crystallogr., 57, p. 596Nonato, M.C., Garrat, R.C., Mascarenhas, Y.P., Jesus, W.D.P., Assakura, M.T., Serrano, S.M.T., Oliva, G., (2001) Biol. Crystallogr., D, 57, p. 599Arni, R.K., Ward, R.J., (1996) Toxicon, 34, p. 827Souza, D.H.F., Selistre-deAraujo, H.S., Garratt, R.C., (2000) Toxicon, 38, p. 1307Binning, G., Coate, C.F., Gerber, G., (1986) Phys. Rev. Lett., 56, p. 930Baranauskas, V., Vidal, B.C., Parizotto, N.A., (1998) Appl. Biochem. Biotechnol., 69, p. 91Baranauskas, V., Garavello-Freitas, I., Jingguo, Z., Cruz-Hofling, M.A., (2001) J. Vac. Sci. Technol. A, 19, p. 104

Synthesis And Characterization Of Boron-doped Carbon Nanotubes

Boron-doped carbon nanotubes have been prepared by chemical vapour deposition of ethyl alcohol doped with B2O3 using a hot-filament system. Multi-wall carbon nanotubes of diameters in the range of 30 - 100 nm have been observed by field emission scanning electron microscopy (FESEM). Raman measurements indicated that the degree of C-C sp2 order decreased with boron doping. Lowest threshold fields achieved were 1.0 V/μm and 2.1 V/μm for undoped and boron-doped samples, respectively. © 2008 IOP Publishing Ltd.100PART 5Bonard, J.M., Kind, H., Stöckli, T., Nilsson, L.O., (2001) Sol. State Electron., 45, p. 893Maultzsch, J., Reich, S., Thomsen, C., Webster, S., Czerw, R., Carroll, D.L., Vieira, S.M.C., Rego, C.A., (2002) Appl.Phys.Lett., 81, p. 2647Mondal, K.C., Coville, N.J., Witcomb, M.J., Tejral, G., Havel, J., (2007) Chem. Phys. Lett., , in pressChen, C.F.C., Tsai, C.L., Lin, C.L., (2003) Diam. Rel. Mater., 12, p. 1500Sharma, R.B., Late Joag, D.S., Govindaraj Rao, C.N.R., (2006) Chem.Phys.Lett, 428, p. 102Mennella, V., Monaco, G., Colanoeli, L., Bussoletti, E., (1995) Carbon, 33 (2), p. 11