Level Set Approach to Reversible Epitaxial Growth

We generalize the level set approach to model epitaxial growth to include thermal detachment of atoms from island edges. This means that islands do not always grow and island dissociation can occur. We make no assumptions about a critical nucleus. Excellent quantitative agreement is obtained with kinetic Monte Carlo simulations for island densities and island size distributions in the submonolayer regime.Comment: 7 pages, 9 figure

Epitaxial Growth Kinetics with Interacting Coherent Islands

The Stranski-Krastanov growth kinetics of undislocated (coherent) 3-dimensional islands is studied with a self-consistent mean field rate theory that takes account of elastic interactions between the islands. The latter are presumed to facilitate the detachment of atoms from the islands with a consequent decrease in their average size. Semi-quantitative agreement with experiment is found for the time evolution of the total island density and the mean island size. When combined with scaling ideas, these results provide a natural way to understand the often-observed initial increase and subsequent decrease in the width of the coherent island size distribution.Comment: 4 pages, 4 figure

Thermal Re-emission Model

Starting from a continuum description, we study the non-equilibrium roughening of a thermal re-emission model for etching in one and two spatial dimensions. Using standard analytical techniques, we map our problem to a generalized version of an earlier non-local KPZ (Kardar-Parisi-Zhang) model. In 2+1 dimensions, the values of the roughness and the dynamic exponents calculated from our theory go like $\alpha \approx z \approx 1$ and in 1+1 dimensions, the exponents resemble the KPZ values for low vapor pressure, supporting experimental results. Interestingly, Galilean invariance is maintained althrough.Comment: 4 pages, minor textual corrections and typos, accepted in Physical Review B (rapid

The effect of monomer evaporation on a simple model of submonolayer growth

We present a model for thin film growth by particle deposition that takes into account the possible evaporation of the particles deposited on the surface. Our model focuses on the formation of two-dimensional structures. We find that the presence of evaporation can dramatically affect the growth kinetics of the film, and can give rise to regimes characterized by different ``growth'' exponents and island size distributions. Our results are obtained by extensive computer simulations as well as through a simple scaling approach and the analysis of rate equations describing the system. We carefully discuss the relationship of our model with previous studies by Venables and Stoyanov of the same physical situation, and we show that our analysis is more general.Comment: 41 pages including figures, Revtex, to be published in Physical Review

Mass-Transport Models with Multiple-Chipping Processes

We study mass-transport models with multiple-chipping processes. The rates of these processes are dependent on the chip size and mass of the fragmenting site. In this context, we consider k-chip moves (where k = 1, 2, 3, ....); and combinations of 1-chip, 2-chip and 3-chip moves. The corresponding mean-field (MF) equations are solved to obtain the steady-state probability distributions, P (m) vs. m. We also undertake Monte Carlo (MC) simulations of these models. The MC results are in excellent agreement with the corresponding MF results, demonstrating that MF theory is exact for these models.Comment: 18 pages, 4 figures, To appear in European Physical Journal

Multiscale Kinetic Monte-Carlo for Simulating Epitaxial Growth

We present a fast Monte-Carlo algorithm for simulating epitaxial surface growth, based on the continuous-time Monte-Carlo algorithm of Bortz, Kalos and Lebowitz. When simulating realistic growth regimes, much computational time is consumed by the relatively fast dynamics of the adatoms. Continuum and continuum-discrete hybrid methods have been developed to approach this issue; however in many situations, the density of adatoms is too low to efficiently and accurately simulate as a continuum. To solve the problem of fast adatom dynamics, we allow adatoms to take larger steps, effectively reducing the number of transitions required. We achieve nearly a factor of ten speed up, for growth at moderate temperatures and large D/F.Comment: 7 pages, 6 figures; revised text, accepted by PR

Droplet Fluctuations in the Morphology and Kinetics of Martensites

We derive a coarse grained, free-energy functional which describes droplet configurations arising on nucleation of a product crystal within a parent. This involves a new `slow' vacancy mode that lives at the parent-product interface. A mode-coupling theory suggests that a {\it slow} quench from the parent phase produces an equilibrium product, while a {\it fast} quench produces a metastable martensite. In two dimensions, the martensite nuclei grow as `lens-shaped' strips having alternating twin domains, with well-defined front velocities. Several empirically known structural and kinetic relations drop out naturally from our theory.Comment: 4 pages, REVTEX, and 3 .eps figures, compressed and uuencoded, Submitted to Phys. Rev. Let

Profile scaling in decay of nanostructures

The flattening of a crystal cone below its roughening transition is studied by means of a step flow model. Numerical and analytical analyses show that the height profile, h(r,t), obeys the scaling scenario dh/dr = F(r t^{-1/4}). The scaling function is flat at radii r<R(t) \sim t^{1/4}. We find a one parameter family of solutions for the scaling function, and propose a selection criterion for the unique solution the system reaches.Comment: 4 pages, RevTex, 3 eps figure

Spiral surface growth without desorption

Spiral surface growth is well understood in the limit where the step motion is controlled by the local supersaturation of adatoms near the spiral ridge. In epitaxial thin-film growth, however, spirals can form in a step-flow regime where desorption of adatoms is negligible and the ridge dynamics is governed by the non-local diffusion field of adatoms on the whole surface. We investigate this limit numerically using a phase-field formulation of the Burton-Cabrera-Frank model, as well as analytically. Quantitative predictions, which differ strikingly from those of the local limit, are made for the selected step spacing as a function of the deposition flux, as well as for the dependence of the relaxation time to steady-state growth on the screw dislocation density.Comment: 9 pages, 3 figures, RevTe