Acceleration of the precession frequency for optically-oriented electron spins in ferromagnetic/semiconductor hybrids

Time-resolved Kerr rotation measurements were performed in InGaAs/GaAs quantum wells nearby a doped Mn delta layer. Our magneto-optical results show a typical time evolution of the optically-oriented electron spin in the quantum well. Surprisingly, this is strongly affected by the Mn spins, resulting in an increase of the spin precession frequency in time. This increase is attributed to the variation in the effective magnetic field induced by the dynamical relaxation of the Mn spins. Two processes are observed during electron spin precession: a quasi-instantaneous alignment of the Mn spins with photo-excited holes, followed by a slow alignment of Mn spins with the external transverse magnetic field. The first process leads to an equilibrium state imprinted in the initial precession frequency, which depends on pump power, while the second process promotes a linear frequency increase, with acceleration depending on temperature and external magnetic field. This observation yields new information about exchange process dynamics and on the possibility of constructing spin memories, which can rapidly respond to light while retaining information for a longer period.Comment: 7 pages, 5 figure

Optically controlled spin-polarization memory effect on Mn delta-doped heterostrucutres

We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs:Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.Comment: 12 pages, 5 figure

Enhancement of carrier lifetimes in type-II quantum dot/quantum well hybrid structures

FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORWe investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 mu s for QDs depending on the spacer layer thickness. Published by AIP Publishing.We investigate optical transitions and carrier dynamics in hybrid structures containing type-I GaAs/AlGaAs quantum wells (QWs) and type-II GaSb/AlGaAs quantum dots (QDs). We show that the optical recombination of photocreated electrons confined in the QWs with holes in the QDs and wetting layer can be modified according to the QW/QD spatial separation. In particular, for low spacer thicknesses, the QW optical emission can be suppressed due to the transference of holes from the QW to the GaSb layer, favoring the optical recombination of spatially separated carriers, which can be useful for optical memory and solar cell applications. Time-resolved photoluminescence (PL) measurements reveal non-exponential recombination dynamics. We demonstrate that the PL transients can only be quantitatively described by considering both linear and quadratic terms of the carrier density in the bimolecular recombination approximation for type-II semiconductor nanostructures. We extract long exciton lifetimes from 700 ns to 5 mu s for QDs depending on the spacer layer thickness.120817FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR2012/11382-9 , 2014/17141-9Sem informaçãoSem informaçã

Effects of Pb doping on the magneto-optical properties of EuPbTe epitaxial films

CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOWe investigate the magneto-optical properties of magnetic-semiconductor Eu1-xPbxTe epitaxial layers with Pb contents up to 5%. We show that the inclusion of a small amount of Pb atoms in EuTe affects the optical and magnetic properties of the resulting alloy. The incorporation of Pb gives rise to a reduction of the Neel temperature and of the slope of the giant magneto-red-shift of the magnetic polaron optical emission. All those effects can be understood in terms of the magnetic dilution effect due to the reduced Eu concentration. The introduction of Pb also reveals a splitting of the high emission energy side-band under applied magnetic field, presenting a more complex feature of the band structure of the alloys. Our results cannot be fully explained on the basis of the current theoretical knowledge of the EuTe band structure and, therefore, we expect that they can stimulate future theoretical investigations and encourage applied investigations of spintronic devices based on these materials. (C) 2015 Elsevier B.V. All rights reserved.We investigate the magneto-optical properties of magnetic-semiconductor Eu1-xPbxTe epitaxial layers with Pb contents up to 5%. We show that the inclusion of a small amount of Pb atoms in EuTe affects the optical and magnetic properties of the resulting alloy. The incorporation of Pb gives rise to a reduction of the Neel temperature and of the slope of the giant magneto-red-shift of the magnetic polaron optical emission. All those effects can be understood in terms of the magnetic dilution effect due to the reduced Eu concentration. The introduction of Pb also reveals a splitting of the high emission energy side-band under applied magnetic field, presenting a more complex feature of the band structure of the alloys. Our results cannot be fully explained on the basis of the current theoretical knowledge of the EuTe band structure and, therefore, we expect that they can stimulate future theoretical investigations and encourage applied investigations of spintronic devices based on these materials.167193196CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOSem informaçãoSem informaçãoSem informaçã

The circular polarization inversion in delta < Mn >/InGaAs/GaAs light-emitting diodes

CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOWe investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta -layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices. (C) 2015 AIP Publishing LLC.We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic delta -layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices.107414CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIORFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOSem informaçãoSem informaçãoSem informaçãoThis study was supported by the Russian Foundation for Basic Research (Project Nos. 14-07-31280 and 15-02-07824) and Ministry of Education and Science of Russian Federation (Project No. 8.1054.2014/K). We also acknowledge the Brazilian financial agencies CNPq, CAPES, and FAPESP

Synthesis of the ortho/meta/para Isomers of relevant pharmaceutical compounds by coupling a sonogashira reaction with a regioselective hydration

This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Catalysis, copyright © American Chemical Society after peer review and technical editing by the publisher.Aryl ketones substituted in ortho, meta, and para position are prepared by a palladium-catalyzed Sonogashira reaction followed by a regioselective hydration of the soformed alkyne with triflimidic acid or a gold catalyst, under catalytic conditions. This methodology opens a way to obtain substituted aryl alkyl ketones from readily available starting materials, haloarenes, and terminal alkynes. The syntheses of the different regioisomers of haloperidol, melperone, pipamperone, and ibuprofen are presented. Structure&#8722;activity relationships for these compounds are studied with dopaminergic and cyclooxigenase binding assays.Financial support by the Severo Ochoa program and Consolider-Ingenio 2010 (proyecto MULTICAT) from MCIINN is acknowledged, and also to the King Saud University. A.L.-P. thanks ITQ for a contract. J.R. C.-A. and P.R.M. thank MCIINN for the concession of a FPU contract.Leyva Perez, A.; Cabrero Antonino, JR.; Rubio Marqués, P.; Al-Resayes, SI.; Corma Canós, A. (2014). Synthesis of the ortho/meta/para Isomers of relevant pharmaceutical compounds by coupling a sonogashira reaction with a regioselective hydration. ACS Catalysis. 4(3):722-731. https://doi.org/10.1021/cs401075zS7227314