390 research outputs found

    Implementation of KRoC on analog devices' "SHARC" DSP

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    This paper summarises the experiences gained at the Control Laboratory of the University of Twente in porting the Kent Retargetable occam Compiler -KroC -to the Analog Devices' ADSP21060 SHARC Digital Signal Processor. The choice of porting the KRoC to the DSP processor was in our view both a challenge and an absolute necessity because DSP processors are an important ingredient in modern day control systems. Currently, our implementation contains the most important occam primitives such as channel communication, PAR, ALT, and most of the integer arithmatic. Furthermore, a basic kernel was realised, providing channel-communication based scheduling only. This porting process, using quite straight-forward modifications of the SPARC KRoC-translator, was done within six weeks. A representative benchmark was constructed, showing that the 33Mhz SHARC-KRoC implementation is 40% faster than the the 25Mhz T800 using the INMOS D7205 Toolset

    Conductance Quantization at zero magnetic field in InSb nanowires

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    Ballistic electron transport is a key requirement for existence of a topological phase transition in proximitized InSb nanowires. However, measurements of quantized conductance as direct evidence of ballistic transport have so far been obscured due to the increased chance of backscattering in one dimensional nanowires. We show that by improving the nanowire-metal interface as well as the dielectric environment we can consistently achieve conductance quantization at zero magnetic field. Additionally, studying the sub-band evolution in a rotating magnetic field reveals an orbital degeneracy between the second and third sub-bands for perpendicular fields above 1T

    Grand Challenges of Evolutionary Psychology

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    In this paper we present our recent developments in control and manipulation of individual spins and photons in a single nanowire quantum dot. Specific examples include demonstration of optical excitation of single spin states, charge tunable quantum devices and single photon sources. We will also discuss our recent discovery of a new type of charge confinement - crystal phase quantum dots. They are formed from the same material with different crystal structure, and today can only be realized in nanowires

    Spontaneous Magnetization and Electron Momentum Density in 3D Quantum Dots

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    We discuss an exactly solvable model Hamiltonian for describing the interacting electron gas in a quantum dot. Results for a spherical square well confining potential are presented. The ground state is found to exhibit striking oscillations in spin polarization with dot radius at a fixed electron density. These oscillations are shown to induce characteristic signatures in the momentum density of the electron gas, providing a novel route for direct experimental observation of the dot magnetization via spectroscopies sensitive to the electron momentum density.Comment: 5 pages (Revtex4), 4 (eps) figure

    Pain and autonomic dysfunction in patients with sarcoidosis and small fibre neuropathy

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    Small fibre neuropathy (SFN) has been demonstrated in sarcoidosis. However, a systematic analysis of neuropathic pain and autonomic symptoms, key features of SFN, has not been performed. Clinimetric evaluation of pain and autonomic symptoms using the neuropathic pain scale (NPS) and the modified Composite Autonomic Symptoms Scale (mCOMPASS) was used in sarcoidosis patients for this study. A total of 91 sarcoidosis patients (n = 23 without SFN symptoms, n = 43 with SFN symptoms but normal intraepidermal nerve fibre density (IENFD), n = 25 with SFN symptoms and reduced IENFD) were examined. NPS and mCOMPASS were assessed twice (reliability studies). Severity of pain was compared between the subgroups. Correlation between NPS and a visual analogue pain scale (VAS) was assessed (validity studies). Healthy controls (n = 105) completed the mCOMPASS for comparison with patients’ scores. Patients with sarcoidosis, SFN complaints, and reduced IENFD demonstrated more severe pain scores on the NPS. The mCOMPASS differentiated between subjects with and without SFN symptoms. A significant correlation was obtained between the NPS and VAS, indicating good construct validity. Good reliability values were obtained for all scales. The use of the NPS to evaluate SFN symptoms is suggested, as it shows differences between patients with SFN symptoms with normal or reduced IENFD values. The mCOMPASS might be used to select patients for further testing

    Ultrafast Hole Spin Qubit with Gate-Tunable Spin-Orbit Switch

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    A key challenge in quantum computation is the implementation of fast and local qubit control while simultaneously maintaining coherence. Qubits based on hole spins offer, through their strong spin-orbit interaction, a way to implement fast quantum gates. Strikingly, for hole spins in one-dimensional germanium and silicon devices, the spin-orbit interaction has been predicted to be exceptionally strong yet highly tunable with gate voltages. Such electrical control would make it possible to switch on demand between qubit idling and manipulation modes. Here, we demonstrate ultrafast and universal quantum control of a hole spin qubit in a germanium/silicon core/shell nanowire, with Rabi frequencies of several hundreds of megahertz, corresponding to spin-flipping times as short as ~1 ns - a new record for a single-spin qubit. Next, we show a large degree of electrical control over the Rabi frequency, Zeeman energy, and coherence time - thus implementing a switch toggling from a rapid qubit manipulation mode to a more coherent idling mode. We identify an exceptionally strong but gate-tunable spin-orbit interaction as the underlying mechanism, with a short associated spin-orbit length that can be tuned over a large range down to 3 nm for holes of heavy-hole mass. Our work demonstrates a spin-orbit qubit switch and establishes hole spin qubits defined in one-dimensional germanium/silicon nanostructures as a fast and highly tunable platform for quantum computation

    Harnessing nuclear spin polarization fluctuations in a semiconductor nanowire

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    Soon after the first measurements of nuclear magnetic resonance (NMR) in a condensed matter system, Bloch predicted the presence of statistical fluctuations proportional to 1/N1/\sqrt{N} in the polarization of an ensemble of NN spins. First observed by Sleator et al., so-called "spin noise" has recently emerged as a critical ingredient in nanometer-scale magnetic resonance imaging (nanoMRI). This prominence is a direct result of MRI resolution improving to better than 100 nm^3, a size-scale in which statistical spin fluctuations begin to dominate the polarization dynamics. We demonstrate a technique that creates spin order in nanometer-scale ensembles of nuclear spins by harnessing these fluctuations to produce polarizations both larger and narrower than the natural thermal distribution. We focus on ensembles containing ~10^6 phosphorus and hydrogen spins associated with single InP and GaP nanowires (NWs) and their hydrogen-containing adsorbate layers. We monitor, control, and capture fluctuations in the ensemble's spin polarization in real-time and store them for extended periods. This selective capture of large polarization fluctuations may provide a route for enhancing the weak magnetic signals produced by nanometer-scale volumes of nuclear spins. The scheme may also prove useful for initializing the nuclear hyperfine field of electron spin qubits in the solid-state.Comment: 18 pages, 5 figure

    Selective Area Growth of PbTe Nanowire Networks on InP

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    Hybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. The need for scalability and complex designs calls for the development of selective area growth techniques. Here, the growth of large scale lead telluride (PbTe) networks is introduced by molecular beam epitaxy. The group IV-VI lead-salt semiconductor is an attractive material choice due to its large dielectric constant, strong spin-orbit coupling, and high carrier mobility. A crystal re-orientation process during the initial growth stages leads to single crystalline nanowire networks despite a large lattice mismatch, different crystal structure, and diverging thermal expansion coefficient to the indium phosphide (InP) substrate. The high quality of the resulting material is confirmed by Hall bar measurements, indicating mobilities up to 5600 cm2 (Vs)−1, and Aharonov–Bohm experiments, indicating a low-temperature phase coherence length exceeding 21 µm. Together, these properties show the high potential of the system as a basis for topological networks.</p

    Avalanche amplification of a single exciton in a semiconductor nanowire

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    Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits
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