A mechanism for unipolar resistance switching in oxide non-volatile memory devices

Building on a recently introduced model for non-volatile resistive switching, we propose a mechanism for unipolar resistance switching in metal-insulator-metal sandwich structures. The commutation from the high to low resistance state and back can be achieved with successive voltage sweeps of the same polarity. Electronic correlation effects at the metal-insulator interface are found to play a key role to produce a resistive commutation effect in qualitative agreement with recent experimental reports on binary transition metal oxide based sandwich structures.Comment: 4 pages, 2 figure

Hysteresis Switching Loops in Ag-manganite memristive interfaces

Multilevel resistance states in silver-manganite interfaces are studied both experimentally and through a realistic model that includes as a main ingredient the oxygen vacancies diffusion under applied electric fields. The switching threshold and amplitude studied through Hysteresis Switching Loops are found to depend critically on the initial state. The associated vacancy profiles further unveil the prominent role of the effective electric field acting at the interfaces. While experimental results validate main assumptions of the model, the simulations allow to disentangle the microscopic mechanisms behind the resistive switching in metal-transition metal oxide interfaces.Comment: 14 pages, 3 figures, to be published in Jour. of Appl. Phy

Construction and validation of a questionnaire to assess student satisfaction with mathematics learning materials

Sixth Edition Technological Ecosystems for Enhancing MulticulturalityMathematics is an essential branch for the scientific development and its study is mandatory in most university degrees. However, currently the level of academic performance and motivation of students to learn this science is not the desired one. The students can use different learning tools inside and outside the math classroom, enhancing the quality of the learning materials that are designed essentially to facilitate the learning of mathematics. The present research project aims to determine the validity and reliability of a measurement instrument that allows theassessment of the satisfaction of the students with the availablelearning materials. To fulfill the objectives of this research, the method of survey was used. A study with a quantitative approach was developed, which led to the design and validation of a questionnaire by a group of 7 experts. The validation closed after applying a pilot study with 728 students. It concluded positively, obtaining nine factors that coincide with the revision of the literature: technological quality, quality of content, visual quality, didactic significance, adequacy of content, relationship between theory and practice, involvement, contribution to learning, relevance and interaction between educational actors. The results of this questionnaire provide to the international scientific community with relevant information for the design, selection, and use of study materials in the classrooms, which will contribute to raising the levels of student engagement, and their academic performance in mathematics, secondaril

Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields

Cataloged from PDF version of article.Electric field dependent photoluminescence decay kinetics and its radiative component are studied in polar InGaN/GaN quantum heterostructures at low fields. Under externally applied electric field lower than polarization fields, spectrally and time resolved photoluminescence measurements are taken to retrieve internal quantum efficiencies and carrier lifetimes as a function of the applied field. Subsequently, relative behavior of radiative recombination lifetimes is obtained in response to the applied field. In these characterizations of polar InGaN/GaN structures, we observe that both the carrier lifetime and the radiative recombination lifetime decrease with increasing external electric field, with the radiative component exhibiting weaker field dependence

Green/Yellow Solid State Lighting via Radiative and Nonradiative Energy Transfer Involving Colloidal Semiconductor Nanocrystals

Cataloged from PDF version of article.LEDs made of In(x)Ga(1-x)N and (Al(x)Ga(1-x))(1-y)In(y)P suffer from significantly reduced quantum efficiency and luminous efficiency in the green/yellow spectral ranges. To address these problems, we present the design, growth, fabrication, hybridization, and characterization of proof-of-concept green/yellow hybrid LEDs that utilize radiative and nonradiative [Forster resonance energy transfer (FRET)] energy transfers in their colloidal semiconductor nanocrystals (NCs) integrated on near-UV LEDs. In our first NC-LED, we realize a color-converted LED that incorporate green-emitting CdSe/ZnS core/shell NCs (lambda(PL) = 548 nm) on near-UV InGaN/GaN LEDs (lambda(EL) = 379 nm). In our second NC-LED, we implement a color-converted FRET-enhanced LED. For that, we hybridize a custom-design assembly of cyan-and green-emitting CdSe/ZnS core/shell NCs (lambda(PL) = 490 and 548 nm) on near-UV LEDs. Using a proper mixture of differently sized NCs, we obtain a quantum efficiency enhancement of 9% by recycling trapped excitons via FRET. With FRET-NC-LEDs, we show that it is possible to obtain a luminous efficacy of 425 lm/W(opt) and a luminous efficiency of 94 lm/W, using near-UV LEDs with a 40% external quantum efficiency. Finally, we investigate FRET-converted light-emitting structures that use nonradiative energy transfer directly from epitaxial quantum wells to colloidal NCs. These proof-of-concept demonstrations show that FRET-based NC-LEDs hold promise for efficient solid-state lighting in green/yellow

Strong enhancement of drag and dissipation at the weak- to strong- coupling phase transition in a bi-layer system at a total Landau level filling nu=1

We consider a bi-layer electronic system at a total Landau level filling factor nu =1, and focus on the transition from the regime of weak inter-layer coupling to that of the strongly coupled (1,1,1) phase (or ''quantum Hall ferromagnet''). Making the assumption that in the transition region the system is made of puddles of the (1,1,1) phase embedded in a bulk of the weakly coupled state, we show that the transition is accompanied by a strong increase in longitudinal Coulomb drag, that reaches a maximum of approximately $h/2e^{2}$. In that regime the longitudinal drag is increased with decreasing temperature.Comment: four pages, one included figur

Overscreened Single Channel Kondo Problem

We consider the single channel Kondo problem with the Kondo coupling between a spin $S$ impurity and conduction electrons with spin $j$. These problems arise as multicritical points in the parameter spaces of two- and higher-level tunneling systems, and some impurity models of heavy fermion compounds. In contrast to the previous Bethe-anstaz conjectures, it turns out that the dynamics of the spin sector is the same as that of a spin $S$ impurity coupled to $k(j)$ channels of spin $1/2$ electrons with $k(j) = 2j(j+1)(2j+1)/3$. As a result, for $2S < k(j)$, the system shows non-Fermi liquid behavior with the same exponents for the thermodynamic quantities as those of $k(j)$ channel Kondo problem. However, both the finite-size spectrum and the operator content are different due to the presence of the other sectors and can be obtained by conformal field theory techniques.Comment: 4 pages, revtex, no figures. Revised Versio