Photon-assisted electron transport in graphene

Photon-assisted electron transport in ballistic graphene is analyzed using scattering theory. We show that the presence of an ac signal (applied to a gate electrode in a region of the system) has interesting consequences on electron transport in graphene, where the low energy dynamics is described by the Dirac equation. In particular, such a setup describes a feasible way to probe energy dependent transmission in graphene. This is of substantial interest because the energy dependence of transmission in mesoscopic graphene is the basis of many peculiar transport phenomena proposed in the recent literature. Furthermore, we discuss the relevance of our analysis of ac transport in graphene to the observability of zitterbewegung of electrons that behave as relativistic particles (but with a lower effective speed of light).Comment: 5 pages, 2 figure

The CERN Detector Safety System for the LHC Experiments

The Detector Safety System (DSS), currently being developed at CERN under the auspices of the Joint Controls Project (JCOP), will be responsible for assuring the protection of equipment for the four LHC experiments. Thus, the DSS will require a high degree of both availability and reliability. After evaluation of various possible solutions, a prototype is being built based on a redundant Siemens PLC front-end, to which the safety-critical part of the DSS task is delegated. This is then supervised by a PVSS SCADA system via an OPC server. The PLC front-end is capable of running autonomously and of automatically taking predefined protective actions whenever required. The supervisory layer provides the operator with a status display and with limited online reconfiguration capabilities. Configuration of the code running in the PLCs will be completely data driven via the contents of a "Configuration Database". Thus, the DSS can easily adapt to the different and constantly evolving requirements of the LHC experiments during their construction, commissioning and exploitation phases.Comment: Talk from the 2003 Computing in High Energy and Nuclear Physics (CHEP03), La Jolla, Ca, USA, March 2003, 5 pages, PDF. PSN THGT00

Spin-dependent Quantum Interference in Single-Wall Carbon Nanotubes with Ferromagnetic Contacts

We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the spin-induced magnetoresistance oscillates with gate voltage in quantitative agreement with calculations based on a Landauer-Buttiker model for independent electrons. Consistent with this interpretation, we find evidence for bias-induced oscillation in the spin-induced magnetoresistance signal on the scale of the level spacing in the nanotube. At higher bias, the spin-induced magnetoresistance disappears because of a sharp decrease in the effective spin-polarization injected from the ferromagnetic electrodes.Comment: Replaced with published versio

Scanning photocurrent microscopy reveals electron-hole asymmetry in ionic liquid-gated WS2 transistors

We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode we can invert the sign of the photocurrent showing that the minority photocarriers are either electrons or holes. Both in the electron- and the hole-doping regimes the photocurrent decays exponentially as a function of the distance between the illumination spot and the nearest contact, in agreement with a two-terminal Schottky-barrier device model. This allows us to compare the value and the doping dependence of the diffusion length of the minority electrons and holes on a same sample. Interestingly, the diffusion length of the minority carriers is several times larger in the hole accumulation regime than in the electron accumulation regime, pointing out an electron-hole asymmetry in WS2

Mono- and Bilayer WS2 Light-Emitting Transistors

We have realized ambipolar ionic liquid gated field-effect transistors based on WS2 mono- and bilayers, and investigated their opto-electronic response. A thorough characterization of the transport properties demonstrates the high quality of these devices for both electron and hole accumulation, which enables the quantitative determination of the band gap ({\Delta}1L = 2.14 eV for monolayers and {\Delta}2L = 1.82 eV for bilayers). It also enables the operation of the transistors in the ambipolar injection regime with electrons and holes injected simultaneously at the two opposite contacts of the devices in which we observe light emission from the FET channel. A quantitative analysis of the spectral properties of the emitted light, together with a comparison with the band gap values obtained from transport, show the internal consistency of our results and allow a quantitative estimate of the excitonic binding energies to be made. Our results demonstrate the power of ionic liquid gating in combination with nanoelectronic systems, as well as the compatibility of this technique with optical measurements on semiconducting transition metal dichalcogenides. These findings further open the way to the investigation of the optical properties of these systems in a carrier density range much broader than that explored until now.Comment: 22 pages, 6 figures, Nano Letters (2014

Electrostatic confinement of electrons in graphene nano-ribbons

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn junctions are induced by the gate voltages, electrons are still confined, as a result of strong disorder, but in a larger area. Measurements on five other devices with different dimensions yield consistent results.Comment: 4 figures, 1 table, 4.4page

Magneto-transport through graphene nano-ribbons

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This phenomenon is accompanied by a decrease in the energy scales associated to charging effects, and to hopping processes probed by temperature-dependent measurements. All the observations can be interpreted consistently in terms of strong-localization effects caused by the large disorder present, and exclude that the insulating state observed in nano-ribbons can be explained solely in terms of a true gap between valence and conduction band.Comment: 4 pages, 5 figure

Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Mapping

The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized light, interband transitions generate an unbalanced non-equilibrium population of electrons and holes in these valleys, resulting in a finite Hall voltage at zero magnetic field when a current flows through the system. This is the so-called valley Hall effect that has recently been observed experimentally. Here, we show that this effect is mediated by photo-generated neutral excitons and charged trions, and not by inter-band transitions generating independent electrons and holes. We further demonstrate an experimental strategy, based on wavelength dependent spatial mapping of the Hall voltage, which allows the exciton and trion contributions to the valley Hall effect to be discriminated in the measurement. These results represent a significant step forward in our understanding of the microscopic origin of photo-induced valley Hall effect in semiconducting transition metal dichalcogenides, and demonstrate experimentally that composite quasi-particles, such as trions, can also possess a finite Berry curvature.Comment: accepted for publication in Nano Letter

A negative mass theorem for surfaces of positive genus

We define the "sum of squares of the wavelengths" of a Riemannian surface (M,g) to be the regularized trace of the inverse of the Laplacian. We normalize by scaling and adding a constant, to obtain a "mass", which is scale invariant and vanishes at the round sphere. This is an anlaog for closed surfaces of the ADM mass from general relativity. We show that if M has positive genus then on each conformal class, the mass attains a negative minimum. For the minimizing metric, there is a sharp logarithmic Hardy-Littlewood-Sobolev inequality and a Moser-Trudinger-Onofri type inequality.Comment: 8 page

Evidence for the formation of a Mott state in potassium-intercalated pentacene

We investigate electronic transport through pentacene thin-films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity exhibits a re-entrance into an insulating state when the potassium concentration is increased past one atom per molecule. We analyze our observations theoretically by means of electronic structure calculations, and we conclude that the phenomenon originates from a Mott metal-insulator transition, driven by electron-electron interactions.Comment: 8 pages, 6 figure