Electron transport via local polarons at interface atoms

Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-3√×3√R30° surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process

Power consumption evaluation of circuit-switched versus packet-switched optical backbone networks

While telecommunication networks have historically been dominated by a circuit-switched paradigm, the last decades have seen a clear trend towards packet-switched networks. In this paper we evaluate how both paradigms perform in optical backbone networks from a power consumption point of view, and whether the general agreement of circuit switching being more power-efficient holds. We consider artificially generated topologies of various sizes, mesh degrees and not yet previously explored in this context transport linerates. We cross-validate our findings with a number of realistic topologies. Our results show that, as a generalization, packet switching can become preferable when the traffic demands are lower than half the transport linerate. We find that an increase in the network node count does not consistently increase the energy savings of circuit switching over packet switching, but is heavily influenced by the mesh degree and (to a minor extent) by the average link length

Coupling to haloform molecules in intercalated C60?

For field-effect-doped fullerenes it was reported that the superconducting transition temperature Tc is markedly larger for C60.2CHX_3 (X=Cl, Br) crystals, than for pure C60. Initially this was explained by the expansion of the volume per C60-molecule and the corresponding increase in the density of states at the Fermi level in the intercalated crystals. On closer examination it has, however, turned out to be unlikely that this is the mechanism behind the increase in Tc. An alternative explanation of the enhanced transition temperatures assumes that the conduction electrons not only couple to the vibrational modes of the C60-molecule, but also to the modes of the intercalated molecules. We investigate the possibility of such a coupling. We find that, assuming the ideal bulk structure of the intercalated crystal, both a coupling due to hybridization of the molecular levels, and a coupling via dipole moments should be very small. This suggests that the presence of the gate-oxide in the field-effect-devices strongly affects the structure of the fullerene crystal at the interface.Comment: 4 pages, 1 figure, to be published in PRB (rapid communication

The Structure of the [Zn_In - V_P] Defect Complex in Zn Doped InP

We study the structure, the formation and binding energies and the transfer levels of the zinc-phosphorus vacancy complex [Zn_In - V_P] in Zn doped p-type InP, as a function of the charge, using plane wave ab initio DFT-LDA calculations in a 64 atom supercell. We find a binding energy of 0.39 eV for the complex, which is neutral in p-type material, the 0/-1 transfer level lying 0.50 eV above the valence band edge, all in agreement with recent positron annihilation experiments. This indicates that, whilst the formation of phosphorus vacancies (V_P) may be involved in carrier compensation in heavily Zn doped material, the formation of Zn-vacancy complexes is not. Regarding the structure: for charge states Q=+6 to -4 the Zn atom is in an sp^2 bonded DX position and electrons added/removed go to/come from the remaining dangling bonds on the triangle of In atoms. This reduces the effective vacancy volume monatonically as electrons are added to the complex, also in agreement with experiment. The reduction occurs through a combination of increased In-In bonding and increased Zn-In electrostatic attraction. In addition, for certain charge states we find complex Jahn-Teller behaviour in which up to three different structures, (with the In triangle dimerised, antidimerised or symmetric) are stable and are close to degenerate. We are able to predict and successfully explain the structural behaviour of this complex using a simple tight binding model.Comment: 10 pages text (postscript) plus 8 figures (jpeg). Submitted to Phys. Rev.

Reversal of the Charge Transfer between Host and Dopant Atoms in Semiconductor Nanocrystals

We present ab initio density functional calculations that show P (Al) dopant atoms in small hydrogen-terminated Si crystals to be negatively (positively) charged. These signs of the dopant charges are reversed relative to the same dopants in bulk Si. We predict this novel reversal of the dopant charge (and electronic character of the doping) to occur at crystal sizes of order 100 Si atoms. We explain it as a result of competition between fundamental principles governing charge transfer in bulk semiconductors and molecules and predict it to occur in nanocrystals of most semiconductors.Comment: 4 pages, 4 figures (3 in color), 2 table

A look into the future of in-building networks: roadmapping the fiber invasion

Optical fiber-based in-building network solutions can outperform in the near future copper- and radiobased solutions both regarding performance and costs. POF solutions are maturing, and can already today be cheaper than Cat-5e solutions when ducts are shared with electricity cabling. Advanced signal modulation techniques allow high-capacity services over POF. With their extra features of multi-wavelength transport and routing, fiber solutions offer a higher network throughput and flexibility, and improved sustainability

Use of the Generalized Gradient Approximation in Pseudopotential Calculations of Solids

We present a study of the equilibrium properties of $sp$-bonded solids within the pseudopotential approach, employing recently proposed generalized gradient approximation (GGA) exchange correlation functionals. We analyze the effects of the gradient corrections on the behavior of the pseudopotentials and discuss possible approaches for constructing pseudopotentials self-consistently in the context of gradient corrected functionals. The calculated equilibrium properties of solids using the GGA functionals are compared to the ones obtained through the local density approximation (LDA) and to experimental data. A significant improvement over the LDA results is achieved with the use of the GGA functionals for cohesive energies. For the lattice constant, the same accuracy as in LDA can be obtained when the nonlinear coupling between core and valence electrons introduced by the exchange correlation functionals is properly taken into account. However, GGA functionals give bulk moduli that are too small compared to experiment.Comment: 15 pages, latex, no figure

Magic Numbers of Silicon Clusters

A structural model for intermediate sized silicon clusters is proposed that is able to generate unique structures without any dangling bonds. This structural model consists of bulk-like core of five atoms surrounded by fullerene-like surface. Reconstruction of the ideal fullerene geometry results in the formation of crown atoms surrounded by $\pi$-bonded dimer pairs. This model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters without any dangling bonds and hence explains why these clusters are least reactive towards chemisorption of ammonia, methanol, ethylene, and water. This model is also consistent with the experimental finding that silicon clusters undergo a transition from prolate to spherical shapes at \Si{27}. Finally, reagent specific chemisorption reactivities observed experimentally is explained based on the electronic structures of the reagents.Comment: 4 pages + 3 figures (postscript files after \end{document}