Mesure de l'énergie des ions lourds par la méthode des protons projetés

Un dispositif destiné à la mesure de l'énergie des faisceaux d'ions lourds de 3 à 6 MeV/ uma a été construit. Le principe de la méthode est de mesurer l'énergie des protons projetés à zéro degré par collision élastique des ions incidents avec les noyaux d'hydrogène d'une cible de formvar. L'incertitude calculée sur l'énergie ainsi mesurée pour les ions lourds est de + 0,45 %. Des mesures faites sur des faisceaux de 19F et 40Ca d'énergie bien connue, accélérés par un Tandem MP, ont montré un écart maximum de 0,3 % entre les énergies réelles et mesurées. Le dispositif permet de contrôler ou calibrer des méthodes plus lourdes de détermination de l'énergie des ions lourds : déviation magnétique, temps de vol. Il se prête particulièrement bien à la mesure des pertes d'énergie d'ions lourds dans des ralentisseurs solides

A monolithically integrated silicon modulator with a 10 Gb/s 5 V pp or 5.6 V pp driver in 0.25 μm SiGe:C BiCMOS

This paper presents as a novelty a fully monolithically integrated 10 Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25 μm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS transistors) a SiGe BiCMOS process (MOS transistors and fast SiGe bipolar transistors) is implemented. The fastest bipolar transistors in the BiCMOS product line used have a transit frequency of f t ≈ 120 GHz and a collector-emitter breakdown voltage of BV CE0 = 2.2 V (IHP SG25H3). The main focus of this paper will be given to the electronic drivers, where two driver variants are implemented in the test chips. Circuit descriptions and simulations, which treat the influences of noise and bond wires, are presented. Measurements at separate test chips for the drivers show that the integrated driver variant one has a low power consumption in the range of 0.66 to 0.68 W but a high gain of S 21 = 37 dB. From the large signal point of view this driver delivers an inverted as well as a non-inverted output data signal between 0 and 2.5 V (5 V pp differential). Driver variant one is supplied with 2.5 V and with 3.5 V. Bit-error-ratio (BER) measurements resulted in a BER better than 10 −12 for voltage differences of the input data stream down to 50 mV pp . Driver variant two, which is an adapted version of driver variant one, is supplied with 2.5 and 4.2 V, consumes 0.83 to 0.87 W, delivers a differential data signal with 5.6 V pp at the output and has a gain of S 21 = 40 dB. The chip of the fully integrated modulator occupies an area of 12.3 mm 2 due to the photonic components. Measurements with a 240 mV pp electrical input data stream, 1.25 V input common-mode voltage and for an optical input wavelength of 1540 nm resulted in an extinction ratio of 3.3 dB for 1 mm long RF phase shifters in each modulator arm driven by driver variant one and a DC tuning voltage of 1.2 V. The extinction ratio was 8.4 dB at a DC tuning voltage of 7 V for a device with 2 mm long RF phase shifters in each arm and driver variant two

Estimation of conditional laws given an extreme component

Let $(X,Y)$ be a bivariate random vector. The estimation of a probability of the form $P(Y\leq y \mid X >t)$ is challenging when $t$ is large, and a fruitful approach consists in studying, if it exists, the limiting conditional distribution of the random vector $(X,Y)$, suitably normalized, given that $X$ is large. There already exists a wide literature on bivariate models for which this limiting distribution exists. In this paper, a statistical analysis of this problem is done. Estimators of the limiting distribution (which is assumed to exist) and the normalizing functions are provided, as well as an estimator of the conditional quantile function when the conditioning event is extreme. Consistency of the estimators is proved and a functional central limit theorem for the estimator of the limiting distribution is obtained. The small sample behavior of the estimator of the conditional quantile function is illustrated through simulations.Comment: 32 pages, 5 figur

INVESTIGATION OF THE TRANSMISSION AND STOPPING OF LIGHT IONS PASSING THROUGH A PLASMA TARGET

Transmission and energy losses of 2 MeV/u Carbon and Sulphur beams passing through a plasma target, have been extensively investigated. A hydrogen plasma ignited by an electrical discharge was coupled to the Orsay Tandem beam accelerator. Fluctuations in beam transmission have been observed and attributed to a magnetic focusing effect generated during the plasma evolution. Energy loss measurements were performed on the basis of time of flight techniques and indicate an enhanced stopping power of the plasma relative to its cold matter equivalent

Tailoring the Response of Silicon Photonics Devices

Abstract: Shrinking waveguide dimensions in silicon photonics results in a series of performance enhancements, but at some cost. We analyse the waveguide geometry in optical modulators and filters to address some issues associated with this trend. Silicon photonics has experienced rapid development for the last three years and several significant results have been reported, demonstrating the viability of the technology [e.g., 1, 2, 3, 4]. One of the recent trends in silicon photonics has been the reduction of waveguide dimensions. This reduction facilitates tighter bending radii and therefore a smaller device footprint which in turn, significantly reduces the cost. Furthermore, technical performance of many silicon photonic devices is enhanced. However, there are also some issues with this trend to smaller dimensions, notably increased propagation losses, increased polarisation dependence and difficulty in coupling to/from optical fibres. These issues can be overcome with a careful design of the waveguide and device geometry. We have previously shown that by reducing waveguide dimensions, multi-GHz bandwidth optical modulators can be achieved by utilising a horizontal pn junction in a waveguide with an overall height of 450 nm In order to improve the polarisation performance to approach polarisation independence of the modulator, we propose here a modulator with a pn junction that is a V-shape structure, as shown in Highly doped silicon Silicon dioxide Highly doped silicon Highly doped silico

P53 germline mutations in childhood cancers and cancer risk for carrier individuals

The family history of cancer in children treated for a solid malignant tumour in the Paediatric Oncology Department at Institute Gustave-Roussy, has been investigated. In order to determine the role of germline p53 mutations in genetic predisposition to childhood cancer, germline p53 mutations were sought in individuals with at least one relative (first- or second-degree relative or first cousin) affected by any cancer before 46 years of age, or affected by multiple cancers. Screening for germline p53 mutation was possible in 268 index cases among individuals fulfilling selection criteria. Seventeen (6.3%) mutations were identified, of which 13 were inherited and four were de novo. Using maximum likelihood methods that incorporate retrospective family data and correct for ascertainment bias, the lifetime risk of cancer for mutation carriers was estimated to be 73% for males and nearly 100% for females with a high risk of breast cancer accounting for the difference. The risk of cancer associated with such mutations is very high and no evidence of low penetrance mutation was found. These mutations are frequently inherited but de novo mutations are not rare. © 2000 Cancer Research Campaig

Impact of shortened crop rotation of oilseed rape on soil and rhizosphere microbial diversity in relation to yield decline

Oilseed rape (OSR) grown in monoculture shows a decline in yield relative to virgin OSR of up to 25%, but the mechanisms responsible are unknown. A long term field experiment of OSR grown in a range of rotations with wheat was used to determine whether shifts in fungal and bacterial populations of the rhizosphere and bulk soil were associated with the development of OSR yield decline. The communities of fungi and bacteria in the rhizosphere and bulk soil from the field experiment were profiled using terminal restriction fragment length polymorphism (TRFLP) and sequencing of cloned internal transcribed spacer regions and 16S rRNA genes, respectively. OSR cropping frequency had no effect on rhizosphere bacterial communities. However, the rhizosphere fungal communities from continuously grown OSR were significantly different to those from other rotations. This was due primarily to an increase in abundance of two fungi which showed 100% and 95% DNA identity to the plant pathogens Olpidium brassicae and Pyrenochaeta lycopersici, respectively. Real-time PCR confirmed that there was significantly more of these fungi in the continuously grown OSR than the other rotations. These two fungi were isolated from the field and used to inoculate OSR and Brassica oleracea grown under controlled conditions in a glasshouse to determine their effect on yield. At high doses, Olpidium brassicae reduced top growth and root biomass in seedlings and reduced branching and subsequent pod and seed production. Pyrenochaeta sp. formed lesions on the roots of seedlings, and at high doses delayed flowering and had a negative impact on seed quantity and quality