221 research outputs found

    Analysis of P-b centers at the Si(111)/SiO2 interface following rapid thermal annealing

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    In this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 degreesC is presented. From a combined analysis using electron spin resonance and quasistatic capacitance-voltage characterization, the dominant defects observed at the Si(111)/SiO2 interface following an inert ambient RTA process are identified unequivocally as the P-b signal (interfacial Si-3=Si-.) for the oxidized Si(111) orientation. Furthermore, the P-b density inferred from electron spin resonance (7.8+/-1)x10(12) cm(-2), is in good agreement with the electrically active interface state density (6.7+/-1.7)x10(12) cm(-2) determined from analysis of the quasistatic capacitance-voltage response

    Electron band alignment between (100)InP and atomic-layer deposited Al2O3

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    Energy barriers at interfaces of (100)InP with atomic-layer deposited Al2O3 are determined using internal photoemission of electrons. The barrier height between the top of the InP valence band and bottom of the alumina conduction band is found to be 4.05 +/- 0.10 eV corresponding to a conduction band offset of 2.7 eV. An interlayer associated with the oxidation of InP may result in a lower barrier for electron injection potentially leading to charge instability of the insulating stack. A wide-gap P-rich interlayer has a potential to reduce this degrading effect as compared to In-rich oxides. (C) 2010 American Institute of Physics. (doi: 10.1063/1.3496039

    Evaluation of Antioxidant Properties of Phaulopsis fascisepala C.B.Cl. (Acanthaceae)

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    The antioxidant activities of crude extract of Phaulopsis fascisepala leaf were evaluated and compared with α-tocopherol and BHT as synthetic antioxidants and ascorbic acid as natural-based antioxidant. In vitro, we studied its antioxidative activities, radical-scavenging effects, Fe2+-chelating ability and reducing power. The total phenolic content was determined and expressed in gallic acid equivalent. The extract showed variable activities in all of these in vitro tests. The antioxidant effect of P. fascisepala was strongly dose dependent, increased with increasing leaf extract dose and then leveled off with further increase in extract dose. Compared to other antioxidants used in the study, α-Tocopherol, ascorbic acid and BHT, P. fascisepala leaf extract showed less scavenging effect on α,α,-diphenyl-β-picrylhydrazyl (DPPH) radical and less reducing power on Fe3+/ferricyanide complex but better Fe2+-chelating ability. These results revealed the in vitro antioxidant activity of P. fascisepala. Further investigations are necessary to verify these activities in vivo

    Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

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    Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.3698461

    Energy barriers at interfaces between (100) InxGa1-xAs (0 <= x <= 0.53) and atomic-layer deposited Al2O3 and HfO2

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    The electron energy band alignment at interfaces of InxGa1-xAs (0 <= x <= 0.53) with atomic-layer deposited insulators Al2O3 and HfO2 is characterized using internal photoemission and photoconductivity experiments. The energy of the InxGa1-xAs valence band top is found to be only marginally influenced by the semiconductor composition. This result suggests that the known bandgap narrowing from 1.42 to 0.75 eV when the In content increases from 0 to 0.53 occurs mostly through downshift of the semiconductor conduction band bottom. It finds support from both electron and hole photoemission data. Similarly to the GaAs case, electron states originating from the interfacial oxidation of InxGa1-xAs lead to reduction in the electron barrier at the semiconductor/oxide interface. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3137187

    Energy barriers at interfaces of (100)GaAs with atomic layer deposited Al2O3 and HfO2

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    Band alignment at the interfaces of (100)GaAs with Al2O3 and HfO2 grown using atomic layer deposition is determined using internal photoemission and photoconductivity measurements. Though the inferred conduction and valence band offsets for both insulators were found to be close to or larger than 2 eV, the interlayer grown by concomitant oxidation of GaAs reduces the barrier for electrons by approximately 1 eV. The latter may pose significant problems associated with electron injection from GaAs into the oxide. (C) 2008 American Institute of Physics. (DOI: 10.1063/1.3021374

    The hydrodynamic efficiency of laser-target acceleration

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    The acceleration of a thin foil using a laser pulse is studied. It is shown that the acceleration efficiency eta H is heavily dependent on the behaviour of the corona ejected by the foil: there is no universal relation eta H( Delta M/M0),M0 and Delta M being initial foil mass and ablated mass, respectively. Known results on the coronal flow are used to check the theory against experimental data available in the literature; effects due to both a non-planar corona, and the time-dependence of the laser irradiance, are considered. The agreement with experiments is substantially better than that for previous analyses. Acceleration of thin spherical shells is also discussed

    The Young Stellar Population of IC1613. I. A New Catalogue of OB Associations

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    Context: Determining the parameters of massive stars is crucial to understand many processes in galaxies and the Universe, since these objects are important sources of ionization, chemical enrichment and momentum. 10m class telescopes enable us to perform detailed quantitative spectroscopic analyses of massive stars in other galaxies, sampling areas of different metallicity. Relating the stars to their environment is crucial to understand the physical processes ruling their formation and evolution. Aims: In preparation for the GTC, our goal is to build a catalogue of massive star candidates in the metal-poor irregular galaxy IC1613 with high astrometric accuracy, apt for the current generation of multi-object spectrographs. A census of OB associations in this galaxy is also needed, to provide important additional information about age and environment of the candidate OB stars. Methods: From INT-WFC observations, we have built an astrometric and photometric catalogue of stars in IC1613. Candidate blue massive stars are preselected from their colors. A friends-of-friends algorithm is developed to find their clustering in the galaxy. While a common physical origin for all the members of the associations cannot be ensured, this is a necessary first step to place candidate OB stars in a population context. Results: We have produced a deep catalogue of targets in IC1613 that covers a large field of view. To achieve high astrometric accuracy a new astrometric procedure is developed for the INT-WFC data. We have also built a catalogue of OB associations in IC1613. We have found that they concentrate in the central regions, specially in the HII bubbles. The study of extinction confirms that it is patchy, with local values of color-excess above the foreground value.Comment: Accepted for publication in Astronomy and Astrophysics. 16 pages + appendix (14 pages); 20 figure

    Detailed Kinematic Study of the Ionized and Neutral Gas in the Complex of Star Formation in the Galaxy IC 1613

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    We carried out detailed kinematic studies of the complex of multiple HI and HII shells that represent the only region of ongoing star formation in the dwarf irregular galaxy IC 1613. We investigated the ionized-gas kinematics by using Fabry--Perot H-alpha observations with the 6-m Special Astrophysical Observatory telescope and the neutral-gas kinematics by using VLA 21-cm radio observations. We identified three extended (300-350 pc) neutral shells with which the brightest HII shells in the complex of star formation are associated. The neutral-gas kinematics in the complex has been studied for the first time and the H~I shells were found to expand at a velocity of 15--18 km/s. We constructed velocity ellipses for all HII shells in the complex and refined (increased) the expansion velocities of most of them. The nature of the interacting ionized and neutral shells is discussed.Comment: 14 pages, 9 EPS-figure
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