Position reporting system using small satellites

A system able to provide position reporting and monitoring services for mobile applications represents a natural complement to the Global Positioning System (GPS) navigation system. The system architecture is defined on the basis of the communications requirements derived by user needs, allowing maximum flexibility in the use of channel capacity, and a very simple and low cost terminal. The payload is sketched, outlining the block modularity and the use of qualified hardware. The global system capacity is also derived. The spacecraft characteristics are defined on the basis of the payload requirements. A small bus optimized for Ariane IV, Delta II vehicles and based on the modularity concept is presented. The design takes full advantage of each launcher with a common basic bus or bus elements for a mass production

Normal Mode Determination of Perovskite Crystal Structures with Octahedral Rotations: Theory and Applications

Nuclear site analysis methods are used to enumerate the normal modes of $ABX_{3}$ perovskite polymorphs with octahedral rotations. We provide the modes of the fourteen subgroups of the cubic aristotype describing the Glazer octahedral tilt patterns, which are obtained from rotations of the $BX_{6}$ octahedra with different sense and amplitude about high symmetry axes. We tabulate all normal modes of each tilt system and specify the contribution of each atomic species to the mode displacement pattern, elucidating the physical meaning of the symmetry unique modes. We have systematically generated 705 schematic atomic displacement patterns for the normal modes of all 15 (14 rotated + 1 unrotated) Glazer tilt systems. We show through some illustrative examples how to use these tables to identify the octahedral rotations, symmetric breathing, and first-order Jahn-Teller anti-symmetric breathing distortions of the $BX_{6}$ octahedra, and the associated Raman selection rules. We anticipate that these tables and schematics will be useful in understanding the lattice dynamics of bulk perovskites and would serve as reference point in elucidating the atomic origin of a wide range of physical properties in synthetic perovskite thin films and superlattices.Comment: 17 pages, 3 figures, 17 tables. Supporting information accessed through link specified within manuscrip

Trigonal Symmetry Breaking and its Electronic Effects in Two-Dimensional Dihalides and Trihalides

We study the consequences of the approximately trigonal ($D_{3d}$) point symmetry of the transition metal (M) site in two-dimensional van der Waals MX$_2$ dihalides and MX$_3$ trihalides. The trigonal symmetry leads to a 2-2-1 orbital splitting of the transition metal $d$ shell, which may be tuned by the interlayer distance, and changes in the ligand-ligand bond lengths. Orbital order coupled to various lower symmetry lattice modes may lift the remaining orbital degeneracies, and we explain how these may support unique electronic states using ZrI$_2$ and CuCl$_2$ as examples, and offer a brief overview of possible electronic configurations in this class of materials. By building and analysing Wannier models adapted to the appropriate symmetry we examine how the interplay among trigonal symmetry, electronic correlation effects, and $p$-$d$ orbital charge transfer leads to insulating, orbitally polarized magnetic and/or orbital-selective Mott states. Our work establishes a rigorous framework to understand, control, and tune the electronic states in low-dimensional correlated halides. Our analysis shows that trigonal symmetry and its breaking is a key feature of the 2D halides that needs to be accounted for in search of novel electronic states in materials ranging from CrI$_3$ to $\alpha$-RuCl$_3$

Strain-controlled band engineering and self-doping in ultrathin LaNiO3_3 films

We report on a systematic study of the temperature-dependent Hall coefficient and thermoelectric power in ultra-thin metallic LaNiO$_3$ films that reveal a strain-induced, self-doping carrier transition that is inaccessible in the bulk. As the film strain varies from compressive to tensile at fixed composition and stoichiometry, the transport coefficients evolve in a manner strikingly similar to those of bulk hole-doped superconducting cuprates with varying doping level. Density functional calculations reveal that the strain-induced changes in the transport properties are due to self-doping in the low-energy electronic band structure. The results imply that thin-film epitaxy can serve as a new means to achieve hole-doping in other (negative) charge-transfer gap transition metal oxides without resorting to chemical substitution

Database, Features, and Machine Learning Model to Identify Thermally Driven Metal-Insulator Transition Compounds

Metal-insulator transition (MIT) compounds are materials that may exhibit insulating or metallic behavior, depending on the physical conditions, and are of immense fundamental interest owing to their potential applications in emerging microelectronics. There is a dearth of thermally-driven MIT materials, however, which makes delineating these compounds from those that are exclusively insulating or metallic challenging. Here we report a material database comprising temperature-controlled MITs (and metals and insulators with similar chemical composition and stoichiometries to the MIT compounds) from high quality experimental literature, built through a combination of materials-domain knowledge and natural language processing. We featurize the dataset using compositional, structural, and energetic descriptors, including two MIT relevant energy scales, an estimated Hubbard interaction and the charge transfer energy, as well as the structure-bond-stress metric referred to as the global-instability index (GII). We then perform supervised classification, constructing three electronic-state classifiers: metal vs non-metal (M), insulator vs non-insulator (I), and MIT vs non-MIT (T). We identify two important descriptors that separate metals, insulators, and MIT materials in a 2D feature space: the average deviation of the covalent radius and the range of the Mendeleev number. We further elaborate on other important features (GII and Ewald energy), and examine how they affect classification of binary vanadium and titanium oxides. We discuss the relationship of these atomic features to the physical interactions underlying MITs in the rare-earth nickelate family. Last, we implement an online version of the classifiers, enabling quick probabilistic class predictions by uploading a crystallographic structure file

Electronic properties of bulk and thin film SrRuO3_3: a search for the metal-insulator transition

We calculate the properties of the 4$d$ ferromagnet SrRuO$_3$ in bulk and thin film form with the aim of understanding the experimentally observed metal to insulator transition at reduced thickness. Although the spatial extent of the 4$d$ orbitals is quite large, many experimental results have suggested that electron-electron correlations play an important role in determining this material's electronic structure. In order to investigate the importance of correlation, we use two approaches which go beyond the conventional local density approximation to density functional theory (DFT): the local spin density approximation + Hubbard $U$ (LSDA+$U$) and the pseudopotential self-interaction correction (pseudo-SIC) methods. We find that the details of the electronic structure predicted with the LSDA do not agree with the experimental spectroscopic data for bulk and thin film SrRuO$_3$. Improvement is found by including electron-electron correlations, and we suggest that bulk orthorhombic SrRuO$_3$ is a {\it weakly strongly-correlated} ferromagnet whose electronic structure is best described by a 0.6 eV on-site Hubbard term, or equivalently with corrections for the self-interaction error. We also perform {\it ab initio} transport calculations that confirm that SrRuO$_3$ has a negative spin polarization at the Fermi level, due to the position of the minority Ru 4$d$ band center. Even with correlations included in our calculations we are unable to reproduce the experimentally observed metal-insulator transition, suggesting that the electronic behavior of SrRuO$_3$ ultra-thin films might be dominated by extrinsic factors such as surface disorder and defects.Comment: 15 pages, 12 figures, 3 table

A Surface Reconstruction with a Fractional Hole: (5×5)R26.6∘(\sqrt{5}\times\sqrt{5}) R26.6^\circ LaAlO3_3 (001)

The structure of the $(\sqrt{5}\times\sqrt{5})R26.6^\circ$ reconstruction of LaAlO$_3$ (001) has been determined using transmission electron diffraction combined with direct methods. The structure is relatively simple, consisting of a lanthanum oxide termination with one lanthanum cation vacancy per surface unit cell. The electronic structure is unusual since a fractional number of holes or atomic occupancies per surface unit cell are required to achieve charge neutrality. Density functional calculations indicate that the charge compensation mechanism occurs by means of highly delocalized holes. The surface contains no oxygen vacancies and with a better than 99% confidence level, the holes are not filled with hydrogen. The reconstruction can be understood in terms of expulsion of the more electropositive cation from the surface followed by an increased covalency between the remaining surface lanthanum atoms and adjacent oxygen atoms.Comment: 4 Pages, 3 Figure

Computationally Directed Discovery of MoBi\u3csub\u3e2\u3c/sub\u3e

Incorporating bismuth, the heaviest element stable to radioactive decay, into new materials enables the creation of emergent properties such as permanent magnetism, superconductivity, and nontrivial topology. Understanding the factors that drive Bi reactivity is critical for the realization of these properties. Using pressure as a tunable synthetic vector, we can access unexplored regions of phase space to foster reactivity between elements that do not react under ambient conditions. Furthermore, combining computational and experimental methods for materials discovery at high-pressures provides broader insight into the thermodynamic landscape than can be achieved through experiment alone, informing our understanding of the dominant chemical factors governing structure formation. Herein, we report our combined computational and experimental exploration of the Mo–Bi system, for which no binary intermetallic structures were previously known. Using the ab initio random structure searching (AIRSS) approach, we identified multiple synthetic targets between 0–50 GPa. High-pressure in situ powder X-ray diffraction experiments performed in diamond anvil cells confirmed that Mo–Bi mixtures exhibit rich chemistry upon the application of pressure, including experimental realization of the computationally predicted CuAl2-type MoBi2 structure at 35.8(5) GPa. Electronic structure and phonon dispersion calculations on MoBi2 revealed a correlation between valence electron count and bonding in high-pressure transition metal–Bi structures as well as identified two dynamically stable ambient pressure polymorphs. Our study demonstrates the power of the combined computational–experimental approach in capturing high-pressure reactivity for efficient materials discovery