1,225 research outputs found
Self-Aligned Ballistic Molecular Transistors and Electrically Parallel Nanotube Arrays
Carbon nanotube field-effect transistors with structures and properties near
the scaling limit with short (down to 50 nm) channels, self aligned geometries,
palladium electrodes with low contact resistance and high-k dielectric gate
insulators are realized. Electrical transport in these miniature transistors is
near ballistic up to high biases at both room and low temperatures. Atomic
layer deposited (ALD) high-k films interact with nanotube sidewalls via van der
Waals interactions without causing weak localization at 4 K. New fundamental
understanding of ballistic transport, optical phonon scattering and potential
interfacial scattering mechanisms in nanotubes are obtained.Comment: Nano Letters, in pres
Improved predictions by Pcons.net using multiple templates
Summary: Multiple templates can often be used to build more accurate homology models than models built from a single template. Here we introduce PconsM, an automated protocol that uses multiple templates to build protein models. PconsM has been among the top-performing methods in the recent CASP experiments and consistently perform better than the single template models used in Pcons.net. In particular for the easier targets with many alternative templates with a high degree of sequence identity, quality is readily improved with a few percentages over the highest ranked model built on a single template. PconsM is available as an additional pipeline within the Pcons.net protein structure prediction server
Decoherence due to contacts in ballistic nanostructures
The active region of a ballistic nanostructure is an open quantum-mechanical
system, whose nonunitary evolution (decoherence) towards a nonequilibrium
steady state is determined by carrier injection from the contacts. The purpose
of this paper is to provide a simple theoretical description of the
contact-induced decoherence in ballistic nanostructures, which is established
within the framework of the open systems theory. The active region's evolution
in the presence of contacts is generally non-Markovian. However, if the
contacts' energy relaxation due to electron-electron scattering is sufficiently
fast, then the contacts can be considered memoryless on timescales coarsened
over their energy relaxation time, and the evolution of the current-limiting
active region can be considered Markovian. Therefore, we first derive a general
Markovian map in the presence of a memoryless environment, by coarse-graining
the exact short-time non-Markovian dynamics of an abstract open system over the
environment memory-loss time, and we give the requirements for the validity of
this map. We then introduce a model contact-active region interaction that
describes carrier injection from the contacts for a generic two-terminal
ballistic nanostructure. Starting from this model interaction and using the
Markovian dynamics derived by coarse-graining over the effective memory-loss
time of the contacts, we derive the formulas for the nonequilibrium
steady-state distribution functions of the forward and backward propagating
states in the nanostructure's active region. On the example of a double-barrier
tunneling structure, the present approach yields an I-V curve with all the
prominent resonant features. The relationship to the Landauer-B\"{u}ttiker
formalism is also discussed, as well as the inclusion of scattering.Comment: Published versio
The Smell of Age: Perception and Discrimination of Body Odors of Different Ages
Our natural body odor goes through several stages of age-dependent changes in chemical composition as we grow older. Similar changes have been reported for several animal species and are thought to facilitate age discrimination of an individual based on body odors, alone. We sought to determine whether humans are able to discriminate between body odor of humans of different ages. Body odors were sampled from three distinct age groups: Young (20–30 years old), Middle-age (45–55), and Old-age (75–95) individuals. Perceptual ratings and age discrimination performance were assessed in 41 young participants. There were significant differences in ratings of both intensity and pleasantness, where body odors from the Old-age group were rated as less intense and less unpleasant than body odors originating from Young and Middle-age donors. Participants were able to discriminate between age categories, with body odor from Old-age donors mediating the effect also after removing variance explained by intensity differences. Similarly, participants were able to correctly assign age labels to body odors originating from Old-age donors but not to body odors originating from other age groups. This experiment suggests that, akin to other animals, humans are able to discriminate age based on body odor alone and that this effect is mediated mainly by body odors emitted by individuals of old age
Orientation-dependent perimeter recombination in GaAs diodes
Perimeter recombination currents affect the performance of GaAs-based devices such as solar cells, heterojunction bipolar transistors, and injection lasers. We report that the n SEf 2 perimeter recombination current has a strong orientation dependence. More than a factor of five variation in the surface recombination current at mesa-etched edges has been observed. These results suggest that with proper device design, perimeter recombination currents could be substantially reduced
Thermoelectric properties of the bismuth telluride nanowires in the constant-relaxation-time approximation
Electronic structure of bismuth telluride nanowires with the growth
directions [110] and [015] is studied in the framework of anisotropic effective
mass method using the parabolic band approximation. The components of the
electron and hole effective mass tensor for six valleys are calculated for both
growth directions. For a square nanowire, in the temperature range from 77 K to
500 K, the dependence of the Seebeck coefficient, the electron thermal and
electrical conductivity as well as the figure of merit ZT on the nanowire
thickness and on the excess hole concentration are investigated in the
constant-relaxation-time approximation. The carrier confinement is shown to
play essential role for square nanowires with thickness less than 30 nm. The
confinement decreases both the carrier concentration and the thermal
conductivity but increases the maximum value of Seebeck coefficient in contrast
to the excess holes (impurities). The confinement effect is stronger for the
direction [015] than for the direction [110] due to the carrier mass difference
for these directions. The carrier confinement increases maximum value of ZT and
shifts it towards high temperatures. For the p-type bismuth telluride nanowires
with growth direction [110], the maximum value of the figure of merit is equal
to 1.3, 1.6, and 2.8, correspondingly, at temperatures 310 K, 390 K, 480 K and
the nanowire thicknesses 30 nm, 15 nm, and 7 nm. At the room temperature, the
figure of merit equals 1.2, 1.3, and 1.7, respectively.Comment: 13 pages, 7 figures, 2 tables, typos added, added references for
sections 2-
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