32 research outputs found

    Role and optimization of the active oxide layer in TiO<sub>2</sub>-based RRAM

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    TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique

    Atomic-Scale Study of Metal–Oxide Interfaces and Magnetoelastic Coupling in Self-Assembled Epitaxial Vertically Aligned Magnetic Nanocomposites

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    Vertically aligned nanocomposites (VANs) of metal/oxide type have recently emerged as a novel class of heterostructures with great scientific and technological potential in the fields of nanomagnetism, multiferroism, and catalysis. One of the salient features of these hybrid materials is their huge vertical metal/oxide interface, which plays a key role in determining the final magnetic and/or transport properties of the composite structure. However, in contrast to their well‐studied planar counterparts, detailed information on the structural features of vertical interfaces encountered in VANs is scarce. In this work, high resolution scanning transmission electron microscopy (STEM) and electron energy‐loss spectroscopy (EELS) are used to provide an element selective atomic‐scale analysis of the interface in a composite consisting of ultrathin, self‐assembled Ni nanowires, vertically epitaxied in a SrTiO3/SrTiO3(001) matrix. Spectroscopic EELS measurements evidence rather sharp interfaces (6–7 Å) with the creation of metallic NiTi bonds and the absence of nickel oxide formation is confirmed by X‐ray absorption spectroscopy measurements. The presence of these well‐defined phase boundaries, combined with a large lattice mismatch between the oxide and metallic species, gives rise to pronounced magnetoelastic effects. Self‐assembled columnar Ni:SrTiO3 composites thus appear as ideal model systems to explore vertical strain engineering in metal/oxide nanostructures

    An integrated ultra-high vacuum apparatus for growth and in situ characterization of complex materials

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    Here we present an integrated ultra-high vacuum apparatus \u2013 named MBE-Cluster \u2013 dedicated to the growth and in situ structural, spectroscopic and magnetic characterization of complex materials. Molecular Beam Epitaxy (MBE) growth of metal oxides, e.g. manganites, and deposition of patterned metallic layers can be fabricated and in situ characterized by reflection high-energy electron diffraction (RHEED), low-energy electron diffraction (LEED) - Auger Electron Spectroscopy, X-ray photoemission spectroscopy (PES) and azimuthal longitudinal magneto-optic Kerr effect (MOKE). The temperature can be controlled in the range from 5 to 580 K, with the possibility of application of magnetic fields H up to \ub17 kOe and electric fields E for voltages up to \ub1500 V. The MBE-Cluster operates for in-house research as well as user facility in combination with the APE beamlines at Sincrotrone-Trieste and the high harmonic generator (HHG) facility for timeresolved spectroscopy

    Ultralow-temperature device dedicated to soft X-ray magnetic circular dichroism experiments

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    A new ultralow-temperature setup dedicated to soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) experiments is described. Two experiments, performed on the DEIMOS beamline (SOLEIL synchrotron), demonstrate the outstanding performance of this new platform in terms of the lowest achievable temperature under X-ray irradiation (T = 220 mK), the precision in controlling the temperature during measurements as well as the speed of the cooling-down and warming-up procedures. Moreover, owing to the new design of the setup, the eddy-current power is strongly reduced, allowing fast scanning of the magnetic field in XMCD experiments; these performances lead to a powerful device for X-ray spectroscopies on synchrotron-radiation beamlines facilities

    Unraveling the magnetic properties of BiFe0.5Cr0.5O3thin films

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    We investigate the structural, chemical, and magnetic properties on BiFe0.5Cr0.5O3(BFCO) thin films grown on (001) (110) and (111) oriented SrTiO3(STO) substrates by x-ray magnetic circular dichroism and x-ray diffraction. We show how highly pure BFCO films, differently from the theoretically expected ferrimagnetic behavior, present a very weak dichroic signal at Cr and Fe edges, with both moments aligned with the external field. Chemically sensitive hysteresis loops show no hysteretic behavior and no saturation up to 6.8 T. The linear responses are induced by the tilting of the Cr and Fe moments along the applied magnetic field

    Surface induces different crystal structures in a room temperature switchable spin crossover compound

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    We investigated the influence of surfaces in the formation of different crystal structures of a spin crossover compound, namely [Fe(L)2] (LH: (2-(pyrazol-1-yl)-6-(1H-tetrazol-5-yl)pyridine), which is a neutral com- pound thermally switchable around room temperature. We observed that the surface induces the for- mation of two different crystal structures, which exhibit opposite spin transitions, i.e. on heating them up to the transition temperature, one polymorph switches from high spin to low spin and the second poly- morph switches irreversibly from low spin to high spin. We attributed this inversion to the presence of water molecules H-bonded to the complex tetrazolyl moieties in the crystals. Thin deposits were investi- gated by means of polarized optical microscopy, atomic force microscopy, X-ray diffraction, X-ray absorption spectroscopy and micro Raman spectroscopy; moreover the analysis of the Raman spectra and the interpretation of spin inversion were supported by DFT calculations

    FeGa/MgO/Fe/GaAs(001) magnetic tunnel junction: Growth and magnetic properties

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    Research on spintronics and on multiferroics leads now to the possibility of combining the properties of these materials in order to develop new functional devices. Here we report the integration of a layer of magnetostrictive material into a magnetic tunnel junction. A FeGa/MgO/Fe heterostructure has been grown on a GaAs(001) substrate by molecular beam epitaxy (MBE) and studied by X-ray magnetic circular dichroism (XMCD). The comparison between magneto optical Kerr effect (MOKE) measurements and hysteresis performed in total electron yield allowed distinguishing the ferromagnetic hysteresis loop of the FeGa top layer from that of the Fe buried layer, evidencing a different switching field of the two layers. This observation indicates an absence of magnetic coupling between the two ferromagnetic layers despite the thickness of the MgO barrier of only 2.5 nm. The in-plane magnetic anisotropy has also been investigated. Overall results show the good quality of the heterostructure and the general feasibility of such a device using magnetostrictive materials in magnetic tunnel junction

    Strain-induced magnetization control in an oxide multiferroic heterostructure

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    Controlling magnetism by using electric fields is a goal of research towards novel spintronic devices and future nanoelectronics. For this reason, multiferroic heterostructures attract much interest. Here we provide experimental evidence, and supporting density functional theory analysis, of a transition in La 0 . 65 Sr 0 . 35 MnO 3 thin film to a stable ferromagnetic phase, that is induced by the structural and strain properties of the ferroelectric BaTiO 3 (BTO) substrate, which can be modified by applying external electric fields. X-ray magnetic circular dichroism measurements on Mn L edges with a synchrotron radiation show, in fact, two magnetic transitions as a function of temperature that correspond to structural changes of the BTO substrate. We also show that ferromagnetism, absent in the pristine condition at room temperature, can be established by electrically switching the BTO ferroelectric domains in the out-of-plane direction. The present results confirm that electrically induced strain can be exploited to control magnetism in multiferroic oxide heterostructures
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